C&H Technology 82RIAPbF User Manual

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Phase Control Thyristors (Stud Version), 80 A

TO-209AC (TO-94)

PRODUCT SUMMARY

I

T(AV)

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series

Vishay Semiconductors

FEATURES

• Hermetic glass-metal seal

• International standard case TO-209AC (TO-94)

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

80 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 1900

60 Hz 1990

50 Hz 18

60 Hz 16

Typical 110 μs

80 A

85 °C

125

400 to 1200 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

I

DRM/IRRM

TYPE NUMBER

80RIA
81RIA

V

DRM/VRRM

VOLTAGE

CODE

40 400 500

120 1200 1300

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

A

kA2s

AT T

MAXIMUM

= 125 °C

J

mA

1580 800 900

Document Number: 94392 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 17-Sep-10 [e-mail]

, [e-mail], [e-mail] 1

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series

Vishay Semiconductors

Phase Control Thyristors

(Stud Version), 80 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 180.5 kA2s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

I

T(AV)

180° conduction, half sine wave

DC at 75 °C case temperature 125

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 1990

t = 10 ms

t = 8.3 ms 1675

t = 10 ms

t = 8.3 ms 16

t = 10 ms

t = 8.3 ms 11.7

(16.7 % x  x I
(I >  x I
(16.7 % x  x I
(I >  x I

Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse 1.60 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

100 % V

RRM

Sinusoidal half wave,
initial T

RRM

= TJ maximum

J

reapplied

< I <  x I

T(AV)

), TJ = TJ maximum 1.13

T(AV)

< I <  x I

T(AV)

), TJ = TJ maximum 1.84

T(AV)

), TJ = TJ maximum 0.99

T(AV)

), TJ = TJ maximum 2.29

T(AV)

80 A

85 °C

1900

1600

18

12.7

200

400

A

kA2s

V

m

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

= 125 °C, Vd = Rated V

T

J

0.2 μF, 15 , gate pulse: 20 V, 65 , t
Per JEDEC standard RS-397, 5.2.2.6.

Gate pulse: 10 V, 15  source, tp = 6 μs, tr = 0.1 μs,
V

= Rated V

d

, ITM = 50 Adc, TJ = 25 °C

DRM

ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs, VR = 50 V,
dV/dt = 20 V/μs, gate bias: 0 V 25 , t

, ITM = 2 x dI/dt snubber

DRM

= 6 μs, tr = 0.5 μs

p

= 500 μs

p

300 A/μs

1

μs

110

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

I

,

RRM

I

DRM

= 125 °C exponential to 67 % rated V

J

TJ = 125 °C rated V

DRM/VRRM

applied 15 mA

DRM

500 V/μs

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94392
2 [e-mail]

, [e-mail], [e-mail] Revision: 17-Sep-10

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series

Phase Control Thyristors

Vishay Semiconductors

(Stud Version), 80 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate current required to trigger I

Maximum DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GT

GD

GD

TJ = TJ maximum, tp  5 ms 12

TJ = TJ maximum, f = 50 Hz, d% = 50 3

TJ = TJ maximum, tp  5 ms

GM

GM

TJ = - 40 °C

= 25 °C 120

J

T

= 125 °C 60

J

TJ = - 40 °C 3.5

GT

= 25 °C 2.5

J

= 125 °C 1.5

T

J

Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied

Maximum gate current/voltage not to

TJ = TJ maximum

trigger is the maximum value which
will not trigger any unit with rated
V

anode to cathode applied

DRM

W

3A

20

10

V

270

mAT

VT

6mA

0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

T

J

Stg

R

thJC

R

thCS

DC operation 0.30

Mounting surface, smooth, flat and greased 0.1

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)

- 40 to 125

- 40 to 150

15.5

(137)

14

(120)

°C

K/W

N · m

(lbf · in)

Document Number: 94392 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 17-Sep-10 [e-mail]

, [e-mail], [e-mail] 3

80

90

100

110

120

130

0 102030405060708090

Maximum Allowable Case Temperature (°C)

30°

60°

90°

120°

180°

Average On-state Current (A)

Cond uctio n Angle

80RIA Series
R (DC) = 0.30 K/W

thJC

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series

Vishay Semiconductors

Phase Control Thyristors

(Stud Version), 80 A

R

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.042 0.030

120° 0.050 0.052

T

90° 0.064 0.070

= TJ maximum K/W

J

60° 0.095 0.100

30° 0.164 0.165

when devices operate at different conduction angles than DC

thJC

130

120

80RIA Serie s
R (DC) = 0.30 K/W

thJC

110

100

Conduction Period

90

30°

80

70

Maximum Allowable Case Temperature (°C)

020406080100120140

60°

90°

120°

180°

DC

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

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120

110

100

90

80

70

60

50

40

30

20

10

0

Ma ximum Ave rage On-stat e Pow er Loss (W)

180°
120°

90°
60°
30°

RM S Li m i t

Conduction Angle

80RIA Se ries
T = 125°C

J

0

10 20 30 40 50 60 70 80

Average On-state Current (A)

1

1

.

4

2

K

/

3

K

/

5

K

/

0255075100125

Maximum Allowable Am bient Tempera ture (°C)

R

0

.

t

6

h

S

K

A

/

W

=

0

.

4K

/

K

/

W

K

/

W

W

W

W

W

­D

e

l

t

a

R

Fig. 3 - On-State Power Loss Characteristics

, [e-mail], [e-mail] Revision: 17-Sep-10

1

10

100

1000

10000

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

T = 25°C

J

Instantaneous On-state Current (A)

In st a nt a n e o us O n- st a t e Vo lt a g e ( V)

T = 125°C

J

80RIA Series

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series

Phase Control Thyristors

Vishay Semiconductors

(Stud Version), 80 A

180

160

140

120

100

80

60

40

20

0

Maximum Average On-state Power Loss (W)

1800

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

1600

1400

1200

1000

80RIA Series

Peak Half Sine Wave On-st ate Curren t (A)

800

110100

Numbe r Of Equa l Amp litud e Half Cyc le Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

DC
180°
120°

90°

60°

30°

1

1

RM S Li m i t

Conduction Period

80RIA Series
T = 125°C

J

0 20406080100120140

Average On-state Current (A)

.

2

3

5

0255075100125

Maximum Allow ab le Amb ient Temp erat ure (°C)

Fig. 4 - On-State Power Loss Characteristics

Initial TJ = 125°C

at 60 Hz 0.0083 s

at 50 Hz 0.0100 s

R

t

h

S

A

=

0

.

4

K

0

/

.

W

6

K

-

/

W

D

e

l

t

a

K

/

W

4

K

/

W

K

/

W

K

/

W

K

/

W

R

2000

Maximum Non Repetitive Surge Current

1900

1800

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.
1700

1600

1500

No Voltage Reapplied
Rated V Reapplied

Initial T = 125°C

J

RRM

1400

1300

1200

1100

1000

900

80RIA Serie s

800

Pea k Half Sine Wave On-state Current (A)

700

0.01 0.1 1

Pulse Tra in Du ra ti on (s)

Revision: 17-Sep-10 [e-mail]

Document Number: 94392 For technical questions within your region, please contact one of the following: www.vishay.com

Fig. 7 - On-State Voltage Drop Characteristics

, [e-mail], [e-mail] 5

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Sq uare Wave Pulse Duration (s)

thJC

80RIA Series

Steady State Value

R = 0.30 K/W

(DC Operation)

Transient Thermal Impedance Z (K/W)

thJC

1

-I

TAV

x 10 A

3

- RIA = Essential part number

4

6

- Lead (Pb)-free

- Voltage code x 100 = V

RRM

(see Voltage Ratings table)

5

-

None = Stud base 1/2"-20UNF- 2 A threads

M = Stud base metric threads M12 x 1.75 E 6

2

-

0 = Eyelet terminals (gate and auxiliary cathode leads)

1 = Fast-on terminals (gate and auxiliary cathode leads)

2 = Flag terminals (gate and auxiliary cathode terminals)

Device code

51 32 4 6

8 0 RIA 120 M PbF

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series

Vishay Semiconductors

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30ohms; tr<=0.5 µs
b) Recommended load line for
<=30% rated di/dt : 20V, 65ohms

10

tr<=1 µs

Phase Control Thyristors

(Stud Version), 80 A

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms

1

Instantaneous Gate Voltage (V)

VGD

0.1

0.001 0.01 0.1 1 10 100 1000

IGD

Tj=125 °C

Device: 80RIA Series

ORDERING INFORMATION TABLE

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Dimensions www.vishay.com/doc?95362

LINKS TO RELATED DOCUMENTS

Tj=-40 °C

Tj=25 °C

(a)

(b)

Instantaneous Ga te Current (A)

(1) (2)

Frequency Limited by PG(AV)

(3)

(4)

Fig. 9 - Gate Characteristics

, [e-mail], [e-mail] Revision: 17-Sep-10

TO-209AC (TO-94) for 80RIA Series

Fast-on terminals

C.S. 0.4 mm

2

White shrink

Red shrink

Red cathode

Red silicon rubber

Ø 4.3 (0.17)

10.0 (0.39) MAX.

(0.0006 s.i.)

Glass metal seal

Ø 8.5 (0.33)

16.5 (0.65) MAX.

Ø 23.5 (0.92) MAX.

C.S. 16 mm

2

(0.025 s.i.)

Flexible lead

2.5 (0.10) MAX.

29.5 (1.16) MAX.

1/2"-20UNF-2A

SW 27

9.5 (0.37) MIN.

White gate

AMP. 280000-1

REF-250

20 (0.79) MIN.

24 (0.94)

MAX.

21 (0.83)

MAX.

157 (6.18)

170 (6.69)

55 (2.17)

MIN.

215 ± 10

(8.46 ± 0.39)

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

Document Number: 95362 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 17-Sep-10 1

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

1

Document Number: 91000