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80PF(R)...(W) Series
Vishay High Power Products
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 80 A
80PF(R)... 80PF(R)...W
FEATURES
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• UL approval pending
DO-203AB (DO-5) DO-203AB (DO-5)
• RoHS compliant
• Designed and qualified for multiple level
TYPICAL APPLICATIONS
• Battery chargers
PRODUCT SUMMARY
I
F(AV)
80 A
• Converters
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
t
I
V
RRM
T
J
80
T
C
50 Hz 1500
60 Hz 1570
50 Hz 11 250
60 Hz 10 230
Range 400 to 1200 V
140
126
- 55 to 180 °C
A
°C
A
A
A2s
RoHS
COMPLIANT
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
, MAXIMUM REPETITIVE
V
TYPE NUMBER
80PF(R)...(W)
Document Number: 93526 For technical questions, contact: ind-modules@vishay.com
Revision: 01-Oct-08 1
VOLTAGE
CODE
40 400 500
120 1200 1440
RRM
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT T
MAXIMUM
= 150 °C
J
mA
980 800 960
www.vishay.com

80PF(R)...(W) Series
Vishay High Power Products
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 80 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
Maximum RMS forward current I
Maximum peak, one-cycle forward,
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 112 500 A2√s
Low level value of threshold voltage V
Low level value of forward
slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)
r
f
FM
180° conduction, half sine wave
t = 10 ms
t = 8.3 ms 1570
t = 10 ms
t = 8.3 ms 1320
t = 10 ms
t = 8.3 ms 10 230
t = 10 ms
t = 8.3 ms 7200
(16.7 % x π x I
(16.7 % x π x I
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
< I < π x I
F(AV)
< I < π x I
F(AV)
Sinusoidal half wave,
initial T
= 150 °C
J
), TJ = TJ maximum 0.73 V
F(AV)
), TJ = TJ maximum 3.0 mΩ
F(AV)
Ipk = 220 A, TJ = 25 °C, tp = 400 µs rectangular wave 1.40 V
80 A
140 °C
126 A
1500
1260
11 250
7950
A
A2s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Allowable mounting torque
Approximate weight
Case style See dimensions - link at the end of datasheet DO-203AB (DO-5)
Notes
(1)
As general recommendation we suggest to tight on Hexagon and not on nut
(2)
Torque must be applicable only to Hexagon and not to plastic structure
T
, T
J
Stg
R
thJC
R
thCS
DC operation 0.30
Mounting surface, smooth, flat and greased 0.25
Tighting on nut
(1)
Not lubricated threads
Tighting on hexagon
(2)
Lubricated threads
- 55 to 180 °C
+ 0 - 10 %
3.4
(30)
2.3
+ 0 - 10 %
(lbf · in)
(20)
15.8 g
0.56 oz.
K/W
N · m
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 93526
2 Revision: 01-Oct-08