C&H Technology 80RIAPbF User Manual

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TO-209AC (TO-94)

PRODUCT SUMMARY

I

T(AV)

80RIA...PbF/81RIA...PbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 80 A

FEATURES

• Hermetic glass-metal seal

• International standard case TO-209AC (TO-94)

• RoHS compliant

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

80 A

• AC controllers

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 1900

60 Hz 1990

50 Hz 18

60 Hz 16

Typical 110 µs

80 A

85 °C

125

400 to 1200 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

80RIA
81RIA

V

VOLTAGE

CODE

40 400 500

80 800 900

120 1200 1300

DRM/VRRM

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

A

kA2s

MAXIMUM

= 125 °C

J

mA

15

Document Number: 94392 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 1

www.vishay.com

80RIA...PbF/81RIA...PbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 80 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 180.5 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave

DC at 75 °C case temperature 125

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 1990

t = 10 ms

t = 8.3 ms 1675

t = 10 ms

t = 8.3 ms 16

t = 10 ms

t = 8.3 ms 11.7

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse 1.60 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.13

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.84

T(AV)

), TJ = TJ maximum 0.99

T(AV)

), TJ = TJ maximum 2.29

T(AV)

80 A

85 °C

1900

1600

18

12.7

200

400

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

= 125 °C, Vd = Rated V

T

J

0.2 µF, 15 Ω, gate pulse: 20 V, 65 Ω, t
Per JEDEC standard RS-397, 5.2.2.6.

Gate pulse: 10 V, 15 Ω source, tp = 6 µs, tr = 0.1 µs,
V

= Rated V

d

, ITM = 50 Adc, TJ = 25 °C

DRM

ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs, VR = 50
V, dV/dt = 20 V/µs, gate bias: 0 V 25 Ω, t

, ITM = 2 x dI/dt snubber

DRM

= 6 µs, tr = 0.5 µs

p

= 500 µs

p

300 A/µs

1

µs

110

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= 125 °C exponential to 67 % rated V

J

TJ = 125 °C rated V

DRM/VRRM

applied 15 mA

DRM

500 V/µs

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Document Number: 94392

2 Revision: 30-Apr-08

80RIA...PbF/81RIA...PbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 80 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate current required to trigger I

Maximum DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GT

GT

GD

GD

TJ = TJ maximum, tp ≤ 5 ms 12

TJ = TJ maximum, f = 50 Hz, d% = 50 3

TJ = TJ maximum, tp ≤ 5 ms

GM

GM

TJ = - 40 °C

= 25 °C 120

J

T

= 125 °C 60

J

TJ = - 40 °C 3.5

= 25 °C 2.5

T

J

T

= 125 °C 1.5

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied

Maximum gate current/voltage not
to trigger is the maximum value

TJ = TJ maximum

which will not trigger any unit with
rated V

anode to cathode

DRM

applied

W

3A

20

10

V

270

mAT

V

6mA

0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Mounting torque, ± 10 %

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.042 0.030

120° 0.050 0.052

90° 0.064 0.070

60° 0.095 0.100

30° 0.164 0.165

Note

• The table above shows the increment of thermal resistance R

T

J

Stg

R

thJC

R

thCS

DC operation 0.30

Mounting surface, smooth, flat and greased 0.1

Non-lubricated threads

Lubricated threads

T

when devices operate at different conduction angles than DC

thJC

- 40 to 125

- 40 to 150

15.5

(137)

14

(lbf · in)

(120)

= TJ maximum K/W

J

°C

K/W

N · m

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Revision: 30-Apr-08 3

80RIA...PbF/81RIA...PbF Series

Vishay High Power Products

130

120

110

100

90

80

Maximum Allowable Case Temperature (°C)

0 102030405060708090

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

80RIA Series
R (DC) = 0.30 K/W

thJC

Cond uctio n Angle

30°

60°

90°

120°

180°

Average On-state Current (A)

120

110

100

90

80

70

60

180°
120°

90°
60°
30°

RM S Li m it

50

40

30

20

10

0

Ma ximum Ave rage On-stat e Power Loss (W)

0

10 20 30 40 50 60 70 80

Average On-state Current (A)

Phase Control Thyristors

(Stud Version), 80 A

130

120

110

100

90

80

70

Maximum Allowa ble Case Temp erature (°C)

R

0

.

t

6

h

S

K

A

/

W

=

0

.

4K

/

1

K

/

W

1

.

4

K

/

W

2

K

/

W

Conduction Angle

80RIA Serie s
T = 125°C

J

3

K

/

W

5

K

/

W

0255075100125

Maximum Allow ab le Am bient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

W

80RIA Serie s
R (DC) = 0.30 K/W

thJC

Conduction Period

30°

60°

90°

120°

180°

DC

020406080100120140

Average On-state Current (A)

­D

e

l

t

a

R

180

160

140

120

100

80

60

40

20

0

Maximum Average On-state Power Lo ss (W)

DC
180°
120°

90°

60°

30°

1

1

RM S Li m i t

Conduction Period

80RIA Serie s
T = 125°C

J

0 20406080100120140

Average On-state Current (A)

.

2

3

5

0255075100125

Maximum Allow ab le Am bient Temp erat ure (°C)

R

t

h

S

A

=

0

.

4

K

0

/

.

W

6

K

-

/

W

D

e

l

t

a

K

/

W

4

K

/

W

K

/

W

K

/

W

K

/

W

R

Fig. 4 - On-State Power Loss Characteristics

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Document Number: 94392

4 Revision: 30-Apr-08

80RIA...PbF/81RIA...PbF Series

Phase Control Thyristors

(Stud Version), 80 A

1800

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

1600

1400

1200

1000

80RIA Se rie s

Peak Half Sine Wave On-state Curren t (A)

800

110100

Numbe r Of Eq ua l Am p litud e Ha lf Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Initial TJ = 125°C

at 60 Hz 0.0083 s

at 50 Hz 0.0100 s

10000

1000

Vishay High Power Products

2000

Maximum Non Repetitive Surge Current

1900

1800

1700

1600

1500

1400

1300

1200

1100

1000

900

800

Pea k Half Sine Wave On-state Current (A)

700

Fig. 6 - Maximum Non-Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

80RIA Serie s

0.01 0.1 1

Pulse Tra in Du ra t io n ( s)

Initial T = 125°C

No Voltage Reapplied
Rated V Reapplied

J

RRM

100

T = 25°C

J

T = 125°C

10

Instantaneous On-state Current (A)

1

0.511.522.533.544.55

In st a nt a n e o us O n- st a t e Vo lt a g e ( V)

J

80RIA Series

Fig. 7 - On-State Voltage Drop Characteristics

1

Steady State Value

R = 0.30 K/W

thJC

(DC Operation)

thJC

0.1

0.01

80RIA Series

0.001

Transient Thermal Impedance Z (K/ W)

0.0001 0.001 0.01 0.1 1 10

Sq uare Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

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Revision: 30-Apr-08 5

80RIA...PbF/81RIA...PbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30ohms; tr<=0.5 µs
b) Recommended load line for
<=30% rated di/dt : 20V, 65ohms

10

tr<=1 µs

1

Instantaneous Gate Voltage (V)

ORDERING INFORMATION TABLE

Device code

VGD

0.1

0.001 0.01 0.1 1 10 100 1000

IGD

8 0 RIA 120 M PbF

Phase Control Thyristors

(Stud Version), 80 A

(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms

Tj=-40 °C

Tj=25 °C

Tj=125 °C

(a)

(b)

Device: 80RIA Series

Instan taneous Ga te Current (A)

Fig. 9 - Gate Characteristics

(1) (2)

Frequency Limited by PG(AV)

(3)

(4)

51324

6

1 -I

TAV

x 10 A

2 - 0 = Eyelet terminals (gate and auxiliary cathode leads)

1 = Fast-on terminals (gate and auxiliary cathode leads)

3 - RIA = Essential part number

- Voltage code x 100 = V

4

-

5

None = Stud base 1/2"-20UNF- 2 A threads

(see Voltage Ratings table)

RRM

M = Stud base metric threads M12 x 1.75 E 6

6

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95003

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 30-Apr-08

Document Number: 94392