C&H Technology 80EPSPbF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

80EPS..PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 80 A

DESCRIPTION/FEATURES

Base

cathode

4, 2

The 80EPS..PbF rectifier High Voltage Series
has been optimized for very low forward voltage
drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150 °C junction temperature.

TO-247AC

1

Anode

Anode

3

Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package

PRODUCT SUMMARY

VF at 80 A 1.17 V

I

FSM

V

RRM

1450 A

800/1200 V

outlines.

This product has been designed and qualified for industrial
level and lead (Pb)-free.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Sinusoidal waveform 80 A

Range 800/1200 V

1450 A

80 A, TJ = 25 °C 1.17 V

- 40 to 150 °C

Pb-free

Available

RoHS*

COMPLIANT

VOLTAGE RATINGS

, MAXIMUM

V

RRM

PART NUMBER

80EPS08PbF 800 900

80EPS12PbF 1200 1300

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

1

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

2

Maximum I

Maximum I

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94347 For technical questions, contact: [e-mail]
Revision: 06-Jun-08 1

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 105 000 A2√s

F(AV)

I

FSM

TC = 100 °C, 180° conduction half sine wave 80

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 1500

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 14 000

applied 1450

RRM

applied 10 500

RRM

A

2

A

s

www.vishay.com

80EPS..PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 80 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

t

F(TO)

RM

80 A, TJ = 25 °C 1.17 V

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 1.0

J

V

= Rated V

R

RRM

3.17 mΩ

0.73 V

0.1

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device Case style TO-247AC (JEDEC)

minimum 6 (5)

maximum 12 (10)

T

, T

J

Stg

R

DC operation 0.35

thJC

40

R

thJA

R

thCS

Mounting surface, flat, smooth and greased 0.2

- 40 to 150 °C

6g

0.21 oz.

kgf · cm
(lbf · in)

80EPS08

80EPS12

mA

°C/W

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 06-Jun-08

Document Number: 94347