C&H Technology 80EPSPbF User Manual

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80EPS..PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 80 A

DESCRIPTION/FEATURES

Base

cathode

4, 2

The 80EPS..PbF rectifier High Voltage Series
has been optimized for very low forward voltage
drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150 °C junction temperature.

TO-247AC

1

Anode

Anode

3

Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package

PRODUCT SUMMARY

VF at 80 A 1.17 V

I

FSM

V

RRM

1450 A

800/1200 V

outlines.

This product has been designed and qualified for industrial
level and lead (Pb)-free.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Sinusoidal waveform 80 A

Range 800/1200 V

1450 A

80 A, TJ = 25 °C 1.17 V

- 40 to 150 °C

Pb-free

Available

RoHS*

COMPLIANT

VOLTAGE RATINGS

, MAXIMUM

V

RRM

PART NUMBER

80EPS08PbF 800 900

80EPS12PbF 1200 1300

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

1

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

2

Maximum I

Maximum I

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94347 For technical questions, contact: [e-mail]
Revision: 06-Jun-08 1

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 105 000 A2√s

F(AV)

I

FSM

TC = 100 °C, 180° conduction half sine wave 80

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 1500

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 14 000

applied 1450

RRM

applied 10 500

RRM

A

2

A

s

www.vishay.com

80EPS..PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 80 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

t

F(TO)

RM

80 A, TJ = 25 °C 1.17 V

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 1.0

J

V

= Rated V

R

RRM

3.17 mΩ

0.73 V

0.1

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device Case style TO-247AC (JEDEC)

minimum 6 (5)

maximum 12 (10)

T

, T

J

Stg

R

DC operation 0.35

thJC

40

R

thJA

R

thCS

Mounting surface, flat, smooth and greased 0.2

- 40 to 150 °C

6g

0.21 oz.

kgf · cm
(lbf · in)

80EPS08

80EPS12

mA

°C/W

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 06-Jun-08

Document Number: 94347

80EPS..PbF High Voltage Series

150

140

130

120

110

Temperture (°C)

100

90

Maximum Allowable Case

80

0

Fig. 1 - Current Rating Characteristics

150

140

130

120

110

Temperature (°C)

100

Maximum Allowable Case

90

0

Fig. 2 - Current Rating Characteristics

Input Rectifier Diode, 80 A

80EPS.. Series
R

(DC) = 0.35 K/W

thJC

Conduction angle

30°

60°

90°

120°

Average Forward Current (A)

80EPS.. Series
R

(DC) = 0.35 K/W

thJC

Ø

Conduction period

30°

60°

90°

120°

180°

DC

Average Forward Current (A)

Vishay High Power Products

160

140

Ø

180°

8070605040302010

90

14012010080604020

120

100

80

60

Power Loss (W)

40

20

Maximum Average Forward

0

1600

1400

1200

1000

800

Forward Current (A)

Peak Half Sine Wave

600

400

DC
180°
120°

90°

60°

30°

RMS limit

Ø

Conduction period

80EPS.. Series
T

= 150 °C

J

0

20 40

60 80 100

120

140

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

At any rated load condition and with
rated V

80EPS.. Series

Number of Equal Amplitudr Halfe

applied following surge.

RRM

= 150 °C

Initial T

J

at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10 1001

Cycle Current Pulse (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

120

100

80

60

40

Power Loss (W)

20

Maximum Average Forward

0

180°
120°

90°
60°
30°

0

2010 3040

Average Forward Current (A)

50 60 70

RMS limit

Ø

Conduction angle

80EPS.. Series
T

= 150 °C

J

80

Fig. 3 - Forward Power Loss Characteristics

90

1800

1600

1400

1200

1000

800

Forward Current (A)

Peak Half Sine Wave

600

400

0.01

Maximum non-repetitive surge current
versus pulse train duration.

Initial T
No voltage reapplied
Rated V

80EPS.. Series

0.1

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

= 150 °C

J

reapplied

RRM

1

Document Number: 94347 For technical questions, contact: [e-mail]

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Revision: 06-Jun-08 3

80EPS..PbF High Voltage Series

Vishay High Power Products

1000

100

10

Instantaneous Forward Current (A)

1

1

Input Rectifier Diode, 80 A

TJ = 25 °C

TJ = 150 °C

80EPS.. Series

0

Fig. 7 - Forward Voltage Drop Characteristics

1.00.5 1.5 2.0

Instantaneous Forward Voltage (V)

2.5 3.0 3.5

4.0

Steady state value
(DC operation)

0.1

D = 0.50

- Transient Thermal
Impedance (°C/W)

thJC

Z

0.01

0.0001 0.001 0.01 0.1 1

Single pulse

D = 0.33
D = 0.25
D = 0.17
D = 0.08

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

80EPS.. Series

10

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Document Number: 94347

4 Revision: 06-Jun-08

80EPS..PbF High Voltage Series

ORDERING INFORMATION TABLE

Device code

80 E P S 12 PbF

1 - Current rating (80 = 80 A)

2 - Circuit configuration:

3 - Package:

4 - Type of silicon:

5 - Voltage ratings

6 -

Input Rectifier Diode, 80 A

51324

E = Single diode

P = TO-247AC

S = Standard recovery rectifier

None = Standard production

PbF = Lead (Pb)-free

Vishay High Power Products

6

08 = 800 V

12 = 1200 V

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95253

Part marking information http://www.vishay.com/doc?95255

Document Number: 94347 For technical questions, contact: [e-mail]
Revision: 06-Jun-08 5

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Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1