C&H Technology 70MT060WSP User Manual

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Suite 108
Minnetonka, MN 55345

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Fax [phone]

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Technical

Application

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Availability

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MTP

MTP IGBT Power Module Primary Rectifier and PFC

PRODUCT SUMMARY

INPUT BRIDGE DIODE, TJ = 150 °C

V

RRM

l

at 80 °C 48 A

O

V

at 25 °C at 20 A 1.05 V

FM

PFC IGBT, T

V

CES

V

at 25 °C at 40 A 1.93 V

CE(sat)

I

at 80°C 66 A

C

R

FRED Pt

R

®

PFC DIODE, TJ = 150 °C

®

AP DIODE, TJ = 150 °C

FRED Pt

V

I

at 80 °C 55 A

F(DC)

V

at 25 °C at 40 A 1.76 V

F

V

at 80 °C 13 A

I

F(DC)

V

at 25 °C at 4 A 1.1 V

F

= 150 °C

J

1200 V

600 V

600 V

600 V

70MT060WSP

Vishay Semiconductors

FEATURES

• Input rectifier bridge

• PFC stage with warp 2 IGBT and FRED Pt
hyperfast diode

• Very low stray inductance design for high
speed operation

• Integrated thermistor

• Isolated baseplate

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Lower conduction losses and switching losses

• Higher switching frequency up to 150 kHz

• Optimized for welding, UPS, and SMPS applications

• PCB solderable terminals

• Direct mounting to heatsink

®

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Repetitive peak reverse voltage V

Input
Rectifier
Bridge

PFC IGBT

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Maximum average output current

= 150 °C maximum

T

J

Surge current (Non-repetitive) I

2

Maximum I

t for fusing I2t 10 ms, sine pulse 316 A2s

Collector to emitter voltage V

Gate to emitter voltage V

Maximum continuous collector current

= 15 V, TJ = 150 °C maximum

at V

GE

Pulsed collector current I

Clamped inductive load current I

Maximum power dissipation P

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

FSM

CM

RRM

I

O

CES

GE

I

C

LM

D

1

1200 V

TC = 80 °C 48

Rated V

applied 250

RRM

TJ = 25 °C 600

I

max. ± 250 ns ± 20

GES

TC = 25 °C 96

= 80 °C 66

T

C

(1)

250

250

TC = 25 °C 378 W

Document Number: 93410

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A

V

A

70MT060WSP

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

PFC Diode

AP Diode

Repetitive peak reverse voltage V

Maximum continuous forward current
T

= 150 °C maximum

J

Maximum power dissipation P

Maximum non-repetitive peak current I

Repetitive peak reverse voltage V

Maximum continuous forward current
T

= 150 °C maximum

J

Maximum power dissipation P

Maximum non-repetitive peak current I

Maximum operating junction temperature T

Storage temperature range T

RMS isolation voltage V

RRM

I

F

FSM

RRM

I

F

FSM

Stg

ISOL

TC = 25 °C 82

T

= 80 °C 55

C

TC = 25 °C 181 W

D

TC = 25 °C 360 A

TC = 25 °C 21

T

= 80 °C 13

C

TC = 25 °C 32 W

D

TC = 25 °C 60 A

J

V

t = 1 s, TJ = 25 °C 3500 W

RMS

R CONDUCTION PER JUNCTION - SINGLE PHASE BRIDGE DIODE

DEVICES

70MT060WSP 0.273 0.302 0.322 0.338 0.350 0.236 0.288 0.294 0.287 0.235 °C/W

SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

Vishay Semiconductors

600 V

A

600 V

A

150

- 40 to + 150

°C

UNITS

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Input
Rectifier
Bridge

Blocking voltage BV

Reverse leakage current I

Forward voltage drop V

RRM

RRM

FM

Forward slope resistance rt

Conduction threshold voltage V

Collector to emitter
breakdown voltage

Temperature coefficient of
breakdown voltage

PFC IGBT

Collector to emitter voltage V

Gate threshold voltage V

Collector to emitter
leakage current

Gate to emitter leakage I

Forward voltage drop V

PFC Diode

Blocking voltage BV

Reverse leakage current I

AP Diode Forward voltage drop V

V

T

BV

CES

BR(CES)

CE(ON)

GE(th)

I

CES

GES

FM

RM

RM

FM

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IR = 250 μA 1200 - - V

V

= 1200 V - - 0.1

RRM

= 1200 V, TJ = 150 °C - - 3.0

V

RRM

IF = 20 A - 1.05 1.2

= 20 A, TJ = 150 °C - 0.94 1.0

I

F

= 150 °C

T

J

--8.7m

- - 0.94 V

VGE = 0 V, IC = 0.5 mA 600 - - V

/TJIC = 0.5 mA (25 °C to 125 °C) - 0.6 - V/°C

VGE 15 V, IC = 40 A - 1.93 2.15

= 15 V, lC = 40 A, TJ = 125 °C - 2.30 2.55

V

GE

VCE = VGE, IC = 500 μA 2.9 - 5.6 V

VGE = 0 V, VCE = 600 V - - 0.1

= 0 V, VCE = 600 V, TJ = 125 °C - - 1

V

GE

VGE = ± 20 V - - ± 100 nA

IF = 40 A - 1.76 2.23

= 40 A, TJ = 125 °C - 1.34 1.62

F

IR = 0.5 mA 600 - -

V

= 600 V - - 75 μA

RRM

= 600 V, TJ = 125 °C - - 0.5 mA

V

RRM

IF = 4 A - 1.1 1.28

= 4 A, TJ = 125 °C - 0.95 1.09

I

F

2

Document Number: 93410

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mA

V

V

mA

VI

V

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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

RECOVERY PARAMETER

PFC Diode

AP Diode

Peak reverse recovery current I

Reverse recovery time t

Reverse recovery charge Q

Peak reverse recovery current I

Reverse recovery time t

Reverse recovery charge Q

Peak reverse recovery current I

Reverse recovery time t

Reverse recovery charge Q

rr

rr

rr

rr

rr

rr

rr

rr

rr

IF = 40 A
dI/dt = 200 A/μs

= 200 V

V

R

IF = 40 A, TJ = 125 °C
dI/dt = 200 A/μs

= 200 V

V

R

IF = 4 A
dI/dt = 200 A/μs

= 200 V

V

R

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge Q

Gate to drain (Miller) charge Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

PFC IGBT

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Input capacitance C

Reverse transfer capacitance C

Reverse bias safe operating area RBSOA

gd

on

off

tot

d(on)

d(off)

on

off

tot

d(on)

d(off)

ies

oes

res

g

IC = 50 A

= 400 V

V
V

CC

= 15 V

GE

gs

IC = 70 A, VCC = 360 V, VGE = 15 V

= 5 , L = 500 μH, TJ = 25 °C

R

r

f

g

IC = 70 A, VCC = 360 V, VGE = 15 V
R

= 5 , L = 500 μH, TJ = 125 °C

r

f

g

VGE = 0 V

= 30 V

V

CC

f = 1 MHz

= 250 A, VCC = 400 V, VP = 600 V,

I

C

R

= 22 , VGE = 15 V, L = 500 μH,

g

= 150 °C

T

J

70MT060WSP

Vishay Semiconductors

-47A

-5979ns

- 118 180 nC

-1217A

- 127 170 ns

- 733 1200 nC

-710A

- 78 120 ns

- 290 600 nC

- 320 -

-42-

- 110 -

-0.13-

-0.18-

-0.31-

- 193 -

-35-

- 202 -

-49-

-0.25-

-0.32-

-0.57-

- 193 -

-35-

- 208 -

-66-

- 7430 -

- 530 -

-94-

Full square

nCGate to source charge Q

mJTurn-off switching loss E

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Resistance R T

B value B T

Notes

• Repetitive rating; pulsed with limited by maximum junction temperature.

Revision: 07-Sep-11

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= 25 °C - 30 000 - 

J

= 25 °C/TJ = 85 °C - 4000 - K

J

3

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70MT060WSP

Instantaneous On-State Current (A)

Instantaneous Voltage Drop (V)

12

3

0

93410_03

1000

100

10

1

TJ = 25 °C

TJ = 150 °C

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Input Rectifier Bridge Junction to case diode thermal resistance

PFC IGBT Junction to case IGBT thermal resistance - - 0.33

PFC Diode Junction to case PFC diode thermal resistance - - 0.69

AP Diode Junction to case AP diode thermal resistance - - 3.92

Case to sink, flat, greased surface per module R

Mounting torque ± 10 % to heatsink

(1)

Approximate weight - 65 - g

Notes

• A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound. Lubricated threads.

160

140

120

100

80

60

Temperature (°C)

40

Maximum Allowable Case

20

0

0

93410_01

Average Output Current (A)

180°

(Sine)

180°

(Rect.)

504020 3010 60 70 80 90

100

Fig. 1 - Single Phase Input Bridge Output

Current Ratings Characteristics

R

thJC

thCS

Fig. 3 - Single Phase Input Bridge On-State

Vishay Semiconductors

--0.9

°C/W

-0.06-°C/W

--4Nm

Voltage Drop Characteristics

300

250

200

150

100

Power Loss (W)

50

Maximum Average On-State

0

93410_02

0

Total Output Current (A)

180°

(Sine)

180°

(Rect.)

5040302010 60

8070

Fig. 2 - Single Phase Bridge On-State Power

Loss Characteristics

Revision: 07-Sep-11

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325

300

275

250

225

200

175

150

125

On-State Current (A)

Peak Half Sine Wave

100

75

50

0.01

93410_04

At any rated load condition and with

rated V

applied following surge.

RRM

No voltage reapplied

Rated V

0.1 1

Initial T

= TJ max.

J

reapplied

RRM

Pulse Train Duration (s)

Fig. 4 - Single Phase Input Bridge Maximum

Non-Repetitive Surge Current (Per Junction)

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0.01

0.1

1

10

0.00001

93410_05

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

10

Steady state value
R

thJC

= 0.9 °C/W

(DC operation)

I

C

(A)

VCE (V)

1 10 100 1000

0.01

0.1

1

93410_07

1000

10

100

I

C

(A)

VCE (V)

012345

0

93410_09

250

50

150

100

200

VGE = 9 V

VGE = 12 V

VGE = 15 V

VGE = 18 V

70MT060WSP

Vishay Semiconductors

Fig. 5 - Maximum Input Bridge Thermal Impedance Z

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

93410_06

0

0

ID - Continuous Collector Current (A)

80 100604020

Fig. 6 - Maximum IGBT Continuous Collector Current vs.

Case Temperature

120

Characteristics (Per Junction)

thJC

250

(A)

C

I

200

150

VGE = 12 V

100

VGE = 18 V

VGE = 15 V

50

0

012345

93410_08

VCE (V)

Fig. 8 - Typical IGBT Output Characteristics, T

VGE = 9 V

= 25 °C

J

Fig. 7 - IGBT Reverse BIAS SOA T

= 150 °C, VGE = 15 V

J

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Fig. 9 - Typical IGBT Output Characteristics, T

5

Document Number: 93410

= 125 °C

J

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I

C

(A)

VGE (V)

345678

0

93410_10

250

50

150

100

200

TC = 125 °C

TC = 25 °C

I

CES

(mA)

V

CES

(V)

100 600200 300 400 500

0.001

93410_11

1

0.1

0.01

TC = 125 °C

TC = 25 °C

I

F

- Instantaneous Forward Drop (A)

VF - Forward Voltage Drop (V)

0.25 0.75 1.25 2.251.75 2.75 3.753.25

0

90

30

50

70

40

10

20

60

80

100

93410_15

TJ = 25 °C

TJ = 125 °C

TJ = 150 °C

Fig. 10 - Typical IGBT Transfer Characteristics, TJ = 125 °C

Fig. 11 - Typical IGBT Zero Gate Voltage Collector Current

70MT060WSP

Vishay Semiconductors

100

90

80

70

60

50

40

30

20

10

- Instantaneous Forward Current (A)

F

I

93410_13

0

0.5 1.0 1.5 2.0 2.5 3.0

TJ = 150 °C

TJ = 25 °C

VF - Anode to Cathode

Forward Voltage Drop (V)

Fig. 13 - Typical Diode Forward Voltage Characteristics of

Antiparallel Diode, t

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0

93410_14

IF - Continuous Forward Current (A)

Fig. 14 - Maximum Continuous Forward Current vs.

Case Temperature Antiparallel Diode

TJ = 125 °C

= 500 μs

p

201510525

30

4.5

4.0

3.5

TC = 25 °C

(V)

geth

V

3.0

2.5

2.0

0.2 1.00.3 0.4 0.6 0.80.5 0.7 0.9

93410_12

Fig. 12 - Typical IGBT Gate Thresold Voltage

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TC = 125 °C

IC (mA)

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Fig. 15 - Typical PFC Diode Forward Voltage

6

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I

R

(mA)

VR (V)

100 200 300 400 500 600

0.001

0.01

0.1

1

93410_17

TJ = 150 °C

TJ = 25 °C

70MT060WSP

Vishay Semiconductors

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0

93410_16

IF - Continuous Forward Current (A)

Fig. 16 - Maximum Continuous Forward Current vs.

Case Temperature PFC Diode

1.6

1.2

0.8

Energy (mJ)

0.4

80604020

100

93410_19

0

0 1020304050

Fig. 19 - Typical IGBT Energy Loss vs. R

TJ = 125 °C, IC = 70 A , VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 

1000

100

E

off

E

on

Rg (Ω)

g

t

d(off)

t

t

f

d(on)

Fig. 17 - Typical FRED Pt

0.4

0.3

0.2

Energy (mJ)

0.1

93410_18

0

TJ = 125 °C, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 

®

Chopper Diode Reverse Current vs.

Reverse Voltage

E

off

E

on

020 6040 80

IC (A)

Fig. 18 - Typical IGBT Energy Loss vs. I

C

Switching Time (ns)

t

r

10

020 6040 80

93410_20

IC (A)

Fig. 20 - Typical IGBT Switching Time vs. I

TJ = 125 °C, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 

1000

t

d(off)

t

d(on)

100

Switching Time (ns)

10

93410_21

t

f

t

r

010 304020 50

Rg (Ω)

Fig. 21 - Typical IGBT Switching Time vs. R

TJ = 125 °C, IC = 70 A, VCE = 360 V, VGE = 15 V, L = 500 μH

C

g

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t

rr

(ns)

dIF/dt (A/μs)

100 200 300 400

93410_22

500

50

150

100

TJ = 25 °C

TJ = 125 °C

I

rr

(A)

dIF/dt (A/μs)

100 200 300 400

93410_23

500

0

20

10

15

5

TJ = 25 °C

TJ = 125 °C

Q

rr

(nC)

dIF/dt (A/μs)

100 200 300 400

93410_24

500

0

700

200

300

500

400

600

100

TJ = 25 °C

TJ = 125 °C

t

rr

(ns)

dIF/dt (A/μs)

100 200 300 400

93410_25

500

50

150

100

TJ = 25 °C

TJ = 125 °C

I

rr

(A)

dIF/dt (A/μs)

100 200 300 400

93410_26

500

0

20

10

15

5

25 °C

125 °C

Q

rr

(nC)

dIF/dt (A/μs)

100 200 300 400

93410_27

500

0

1100

400

600

900

1000

200

300

500

700

800

100

25 °C

125 °C

70MT060WSP

Vishay Semiconductors

Fig. 22 - Typical trr Antiparallel Diode vs. dIF/dt

V

= 200 V, IF = 4 A

rr

Fig. 23 - Typical I

Antiparallel Diode vs. dIF/dt

rr

V

= 200 V, IF = 4 A

rr

Fig. 25 - Typical t

Fig. 26 - Typical I

Chopper Diode vs. dIF/dt, Vrr = 200 V, IF = 40 A

rr

Chopper Diode vs. dIF/dt

rr

V

= 200 V, IF = 40 A

rr

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Fig. 24 - Typical Q

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Antiparallel Diode vs. dIF/dt

rr

V

= 200 V, IF = 4 A

rr

Fig. 27 - Typical Q

Chopper Diode vs. dIF/dt, Vrr = 200 V, IF = 40 A

rr

8

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L

80 V

R

g

1000 V

D.U.T.

+

-

R

g

D.U.T.

R =

V

CC

I

CM

V

CC

+

-

1

70MT060WSP

Vishay Semiconductors

0.1

Junction to Case (°C/W)

- Transient Thermal Impedance

thJC

0.01

Z

93410_28

0.0001

0.001 0.01 0.1 1

Fig. 28 - Maximum Thermal Impedance Z

0

1K

D.U.T.

Fig. C.T.1 - Gate Charge Circuit (Turn-Off)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

t1 - Rectangular Pulse Duration (s)

L

V

CC

+

-

Characteristics (IGBT)

thJC

Fig. C.T.3 - S.C. SOA Circuit

Diode clamp/

D.U.T.

-

- 5 V

10

Driver

D

+

C

D.U.T.

L

+

D.U.T./

R

g

Driver

900 V

-

+

-

V

CC

Fig. C.T.2 - RBSOA Circuit

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Fig. C.T.5 - Resistive Load Circuit

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Fig. C.T.4 - Switching Loss Circuit

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D4

D3D1

D2

E7

F7

Th

C4

B1

A1

C7

A7

A4

D6

H7

M7

Q1

D1
E1

M3

M1

G1
H1

D5

CIRCUIT CONFIGURATION

DIMENSIONS in millimeters

70MT060WSP

Vishay Semiconductors

19.8 ± 0.1

12 ± 0.3 12.1± 0.3

2.5 ± 0.1

0.8 Ra

1.3 7.4

45°

Ø 2.1(X4)

39.5 ± 0.3

Ø 1.1± 0.025

45 ± 0.1

63.5 ± 0.15

48.7± 0.3

BACDEF LG HI M

1

2

3

4

5

6

7

6

12

18

24

30

3.0

2.1

1.5

z detail

6

3

17± 0.3

7.6

22.8

15.2

X

5.2

R 2.6 (X2)

Use Self Tapping Screw

or M2.5 x X.
e.g. M2.5 x 6 or M2.5 x 8

according to Pcb

thickness used

21.1 ± 0.5

33.2 ± 0.3

31.8 ± 0.15

4.1

Diam. 5 (X4)

27.5 ± 0.3

PINS POSITION

WITH TOLERANCE

Dimensions www.vishay.com/doc?95383

Revision: 07-Sep-11

For technical questions within your region: [e-mail]

Ø 0.6

LINKS TO RELATED DOCUMENTS

10

, [e-mail], [e-mail]

Document Number: 93410

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DIMENSIONS in millimeters

48.7 ± 0.3

A

1

2

3

4

5

6

7

BCDE GHI LM

19.8 ± 0.1

45°

Ø 2.1 (x 4)

7.4

22.8

15.2

7.6

5.2

7

1.3

6

12

18

24

30

20

R2.6 (x 2)

Ø 1 ± 0.025

F

Pins position
with tolerance

Ø 0.5

Ø 5 (x 4)

21.1

+ 0.5

- 0.2

22.8 ± 0.5

Ground pin

31.8 ± 0.15

33.2 ± 0.3

27.5 ± 0.3

4.1

39.5 ± 0.3 12 ± 0.312 ± 0.3

2.5 ± 0.1

17 ± 0.3

3

0.8 Ra

Ø 1.1 ± 0.025

45 ± 0.1

63.5 ± 0.15

1.5

Use self taping screw
or M2.5 x X.
e.g. M2.5 x 6 or M2.5 x 8
according to PCB thickness used

z detail

3.0

2.1

6

Outline Dimensions

Vishay Semiconductors

MTP - Full Pin

Document Number: 95383 For technical questions, contact: [e-mail]
Revision: 19-Nov-10 1

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Revision: 12-Mar-12

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Document Number: 91000