C&H Technology 70MT060WSP User Manual

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Suite 108
Minnetonka, MN 55345

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MTP

MTP IGBT Power Module Primary Rectifier and PFC

PRODUCT SUMMARY

INPUT BRIDGE DIODE, TJ = 150 °C

V

RRM

l

at 80 °C 48 A

O

V

at 25 °C at 20 A 1.05 V

FM

PFC IGBT, T

V

CES

V

at 25 °C at 40 A 1.93 V

CE(sat)

I

at 80°C 66 A

C

R

FRED Pt

R

®

PFC DIODE, TJ = 150 °C

®

AP DIODE, TJ = 150 °C

FRED Pt

V

I

at 80 °C 55 A

F(DC)

V

at 25 °C at 40 A 1.76 V

F

V

at 80 °C 13 A

I

F(DC)

V

at 25 °C at 4 A 1.1 V

F

= 150 °C

J

1200 V

600 V

600 V

600 V

70MT060WSP

Vishay Semiconductors

FEATURES

• Input rectifier bridge

• PFC stage with warp 2 IGBT and FRED Pt
hyperfast diode

• Very low stray inductance design for high
speed operation

• Integrated thermistor

• Isolated baseplate

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Lower conduction losses and switching losses

• Higher switching frequency up to 150 kHz

• Optimized for welding, UPS, and SMPS applications

• PCB solderable terminals

• Direct mounting to heatsink

®

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Repetitive peak reverse voltage V

Input
Rectifier
Bridge

PFC IGBT

Revision: 07-Sep-11

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Maximum average output current

= 150 °C maximum

T

J

Surge current (Non-repetitive) I

2

Maximum I

t for fusing I2t 10 ms, sine pulse 316 A2s

Collector to emitter voltage V

Gate to emitter voltage V

Maximum continuous collector current

= 15 V, TJ = 150 °C maximum

at V

GE

Pulsed collector current I

Clamped inductive load current I

Maximum power dissipation P

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

FSM

CM

RRM

I

O

CES

GE

I

C

LM

D

1

1200 V

TC = 80 °C 48

Rated V

applied 250

RRM

TJ = 25 °C 600

I

max. ± 250 ns ± 20

GES

TC = 25 °C 96

= 80 °C 66

T

C

(1)

250

250

TC = 25 °C 378 W

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A

V

A

70MT060WSP

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

PFC Diode

AP Diode

Repetitive peak reverse voltage V

Maximum continuous forward current
T

= 150 °C maximum

J

Maximum power dissipation P

Maximum non-repetitive peak current I

Repetitive peak reverse voltage V

Maximum continuous forward current
T

= 150 °C maximum

J

Maximum power dissipation P

Maximum non-repetitive peak current I

Maximum operating junction temperature T

Storage temperature range T

RMS isolation voltage V

RRM

I

F

FSM

RRM

I

F

FSM

Stg

ISOL

TC = 25 °C 82

T

= 80 °C 55

C

TC = 25 °C 181 W

D

TC = 25 °C 360 A

TC = 25 °C 21

T

= 80 °C 13

C

TC = 25 °C 32 W

D

TC = 25 °C 60 A

J

V

t = 1 s, TJ = 25 °C 3500 W

RMS

R CONDUCTION PER JUNCTION - SINGLE PHASE BRIDGE DIODE

DEVICES

70MT060WSP 0.273 0.302 0.322 0.338 0.350 0.236 0.288 0.294 0.287 0.235 °C/W

SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

Vishay Semiconductors

600 V

A

600 V

A

150

- 40 to + 150

°C

UNITS

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Input
Rectifier
Bridge

Blocking voltage BV

Reverse leakage current I

Forward voltage drop V

RRM

RRM

FM

Forward slope resistance rt

Conduction threshold voltage V

Collector to emitter
breakdown voltage

Temperature coefficient of
breakdown voltage

PFC IGBT

Collector to emitter voltage V

Gate threshold voltage V

Collector to emitter
leakage current

Gate to emitter leakage I

Forward voltage drop V

PFC Diode

Blocking voltage BV

Reverse leakage current I

AP Diode Forward voltage drop V

V

T

BV

CES

BR(CES)

CE(ON)

GE(th)

I

CES

GES

FM

RM

RM

FM

Revision: 07-Sep-11

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IR = 250 μA 1200 - - V

V

= 1200 V - - 0.1

RRM

= 1200 V, TJ = 150 °C - - 3.0

V

RRM

IF = 20 A - 1.05 1.2

= 20 A, TJ = 150 °C - 0.94 1.0

I

F

= 150 °C

T

J

--8.7m

- - 0.94 V

VGE = 0 V, IC = 0.5 mA 600 - - V

/TJIC = 0.5 mA (25 °C to 125 °C) - 0.6 - V/°C

VGE 15 V, IC = 40 A - 1.93 2.15

= 15 V, lC = 40 A, TJ = 125 °C - 2.30 2.55

V

GE

VCE = VGE, IC = 500 μA 2.9 - 5.6 V

VGE = 0 V, VCE = 600 V - - 0.1

= 0 V, VCE = 600 V, TJ = 125 °C - - 1

V

GE

VGE = ± 20 V - - ± 100 nA

IF = 40 A - 1.76 2.23

= 40 A, TJ = 125 °C - 1.34 1.62

F

IR = 0.5 mA 600 - -

V

= 600 V - - 75 μA

RRM

= 600 V, TJ = 125 °C - - 0.5 mA

V

RRM

IF = 4 A - 1.1 1.28

= 4 A, TJ = 125 °C - 0.95 1.09

I

F

2

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mA

V

V

mA

VI

V

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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

RECOVERY PARAMETER

PFC Diode

AP Diode

Peak reverse recovery current I

Reverse recovery time t

Reverse recovery charge Q

Peak reverse recovery current I

Reverse recovery time t

Reverse recovery charge Q

Peak reverse recovery current I

Reverse recovery time t

Reverse recovery charge Q

rr

rr

rr

rr

rr

rr

rr

rr

rr

IF = 40 A
dI/dt = 200 A/μs

= 200 V

V

R

IF = 40 A, TJ = 125 °C
dI/dt = 200 A/μs

= 200 V

V

R

IF = 4 A
dI/dt = 200 A/μs

= 200 V

V

R

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge Q

Gate to drain (Miller) charge Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

PFC IGBT

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Input capacitance C

Reverse transfer capacitance C

Reverse bias safe operating area RBSOA

gd

on

off

tot

d(on)

d(off)

on

off

tot

d(on)

d(off)

ies

oes

res

g

IC = 50 A

= 400 V

V
V

CC

= 15 V

GE

gs

IC = 70 A, VCC = 360 V, VGE = 15 V

= 5 , L = 500 μH, TJ = 25 °C

R

r

f

g

IC = 70 A, VCC = 360 V, VGE = 15 V
R

= 5 , L = 500 μH, TJ = 125 °C

r

f

g

VGE = 0 V

= 30 V

V

CC

f = 1 MHz

= 250 A, VCC = 400 V, VP = 600 V,

I

C

R

= 22 , VGE = 15 V, L = 500 μH,

g

= 150 °C

T

J

70MT060WSP

Vishay Semiconductors

-47A

-5979ns

- 118 180 nC

-1217A

- 127 170 ns

- 733 1200 nC

-710A

- 78 120 ns

- 290 600 nC

- 320 -

-42-

- 110 -

-0.13-

-0.18-

-0.31-

- 193 -

-35-

- 202 -

-49-

-0.25-

-0.32-

-0.57-

- 193 -

-35-

- 208 -

-66-

- 7430 -

- 530 -

-94-

Full square

nCGate to source charge Q

mJTurn-off switching loss E

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Resistance R T

B value B T

Notes

• Repetitive rating; pulsed with limited by maximum junction temperature.

Revision: 07-Sep-11

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

= 25 °C - 30 000 - 

J

= 25 °C/TJ = 85 °C - 4000 - K

J

3

Document Number: 93410

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