C&H Technology 70MT060WHTAPBF User Manual

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MTP

Vishay High Power Products

"Half-Bridge" IGBT MTP

(Warp2 Speed IGBT), 70 A

FEATURES

• NPT warp2 speed IGBT technology with
positive temperature coefficient

• HEXFRED
reverse recovery

• SMD thermistor (NTC)

•Al

2O3

• Very low stay inductance design for high speed operation

• UL pending

• Operating frequency 60 to 150 kHz

• Totally lead (Pb)-free

• Designed and qualified for industrial level

®

antiparallel diodes with ultrasoft

BDC

70MT060WHTAPbF

RoHS

COMPLIANT

PRODUCT SUMMARY

V

CES

typical at VGE = 15 V 2.1 V

V

CE(on)

at TC = 25 °C 70 A

I

C

600 V

BENEFITS

• Optimized for welding, UPS and SMPS applications

• Lower coduction losses and switching losses

• Low EMI, requires less snubbing

• Direct mounting to heatsink

• PCB solderable terminals

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation, IGBT P

CES

C

CM

LM

F

FM

GE

ISOL

D

TC = 25 °C 100

= 78 °C 70

T

C

TC = 78 °C 53

Any terminal to case, t = 1 min 2500

TC = 25 °C 347

T

= 100 °C 139

C

600 V

300

300

200

± 20

A

V

W

Document Number: 94469 For technical questions, contact: [e-mail]
Revision: 06-May-08 1

www.vishay.com

70MT060WHTAPbF

Vishay High Power Products

"Half-Bridge" IGBT MTP

(Warp2 Speed IGBT), 70 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Collector to emitter voltage V

Gate threshold voltage V

Collector to emitter leaking current I

Gate to emitter leakage current I

(BR)CESVGE

CE(on)

GE(th)IC

CES

GES

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time td

Rise time t

Turn-off delay time td

Fail time t

Turn-on delay time td

Rise time t

Turn-off delay time td

Fail time t

Input capacitance C

Reverse transfer capacitance C

Reverse BIAS safe operating area RBSOA

g

ge

gc

on

off

ts

on

off

ts

on

r

off

f

on

r

off

f

ies

oes

res

= 0 V, IC = 500 µA 600 - - V

VGE = 15 V, IC = 70 A - 2.1 2.4

V

= 15 V, IC = 140 A - 2.8 3.4

GE

= 15 V, IC = 70 A, TJ = 150 °C - 2.7 3

V

GE

= 0.5 mA 3 - 6

VGE = 0 V, IC = 600 V - - 0.7

V

= 0 V, IC = 600 V, TJ = 150 °C - - 10

GE

VGE = ± 20 V - - ± 250 nA

IC = 70 A

= 480 V

V

CC

V

= 15 V

GE

RG = 10 Ω
I

= 70 A, VCC = 480 V, VGE = 15 V, L = 200 µH

C

Energy losses include tail and diode reverse
recovery

RG = 10 Ω
I

= 70 A, V

C

= 480 V, VGE = 15 V, L = 200 µH

CC

Energy losses include tail and diode reverse
recovery, T

= 150 °C

J

RG = 10 Ω
I

= 70 A, VCC = 480 V, VGE = 15 V, L = 200 µH

C

Energy losses include tail and diode reverse
recovery

RG = 10 Ω

= 70 A, V

I

C

= 480 V, VGE = 15 V, L = 200 µH

CC

Energy losses include tail and diode reverse
recovery, T

= 150 °C

J

VGE = 0 V
V

= 30 V

CC

f = 1.0 MHz

= 150 °C, IC = 300 A

T

J

V

= 400 V, VP = 600 V

CC

= 22 Ω, VGE = + 15 V to 0 V

R

G

- 460 690

- 160 250

-70130

-1.1-

-0.9-

-2-

-1.27-

-1.13-

-2.4-

- 314 -

-49-

- 308 -

-68-

- 312 -

-50-

- 320 -

-78-

- 8000 -

- 790 -

- 110 -

Fullsquare

V

mA

nCGate to emitter charge (turn-on) Q

mJ

ns

pFOutput capacitane C

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94469

2 Revision: 06-May-08

70MT060WHTAPbF

"Half-Bridge" IGBT MTP

Vishay High Power Products

(Warp2 Speed IGBT), 70 A

THERMISTOR SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Resistance R

Sensitivity index of the
thermistor material

Note

(1)

T0, T1 are thermistor´s temperatures

R

0

(2)

------­R

1

⎛⎞

------

β

exp=

⎝⎠

T

1

1

------

–

, temperature in Kelvin

T

0

1

0

(1)(2)

β

DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Diode forward voltage drop V

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

FM

rr

rr

rr

rr

rr

rr

T0 = 25 °C - 30 - kΩ

T0 = 25 °C
T

= 85 °C

1

- 4000 - K

IC = 70 A, VGE = 0 V - 1.64 2.1

= 140 A, V

C

= 70 A, VGE = 0 V, TJ = 150 °C - 1.69 1.9

I

C

= 0 V - 2.1 2.4

GE

- 96 126 ns
VCC = 200 V, IC = 70 A
dI/dt = 200 A/µs

- 9.4 12.8 A

- 440 750 nC

VCC = 200 V, IC = 70 A
dI/dt = 200 A/µs

= 125 °C

T

J

- 140 194 ns

-1419A

- 950 1700 nC

VI

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction
temperature range

Storage temperature range T

Junction to case

Case-to-sink Module R

IGBT, Diode

IGBT

T

J

Stg

R

thJC

thCS

Heatsink compound thermal conductivity = 1 W/mK - 0.06 -

A mounting compound is recommended and the

Mounting torque to heatsink

torque should be checked after 3 hours to allow for the
spread of the compound. Lubricated threads.

Weight 66 g

Document Number: 94469 For technical questions, contact: [e-mail]
Revision: 06-May-08 3

- 40 - 150

°CThermistor - 40 - 125

- 40 - 125

- - 0.36

°C/WDiode --0.8

3 ± 10 % Nm

www.vishay.com

70MT060WHTAPbF

Vishay High Power Products

1000

VGE = 15 V

100

TJ = 150 °C

10

- Collector to Emitter Current (A)

C

I

1

0.0

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0

TJ = 25 °C

1.0 2.0 3.0 4.0

VCE - Collector to Emitter Voltage (V)

Fig. 1 - Typical Output Characteristics

DC

20 40 60 80 100

Maximum DC Collector Current (A)

Fig. 2 - Maximum Collector Current vs.

Case Temperature

"Half-Bridge" IGBT MTP

(Warp2 Speed IGBT), 70 A

16

14

12

10

8

6

4

- Gate to Emitter Voltage (V)

2

GE

V

5.0

120

0

1000

100

10

- Instantaneous

F

I

Forward Current (A)

1

Vcc = 480 V

200 400 600 800 10000

OG - Total Gate Charge (nC)

Fig. 4 - Typical Gate Charge vs.

Gate to Emitter Votlage

TJ = 150 °C

TJ = 25 °C

0.5 1.0 1.5 2.0 2.5 3.0

0.0

V

- Forward Voltage Drop (V)

FM

Fig. 5 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

3.5

4.5

4.0

3.5

3.0

2.5

Ic = 140 A

Voltage (V)

2.0

- Collector to Emitter

CE

V

1.5

1.0

20 40 60 80 120100 140

TJ - Junction Temperature (°C)

Fig. 3 - Typical Collector to Emitter Voltage vs.

Ic = 70 A

Ic = 30 A

160

10

150 °C

1.0

0.1

0.01

Current (mA)

- Collector to Emitter

0.001

CES

I

0.0001

200

300 400 500

V

- Collector to Emitter Voltage (V)

CES

25 °C

Fig. 6 - Typical Zero Gate Voltage Collector Current

600

Junction Temperature

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Document Number: 94469

4 Revision: 06-May-08

70MT060WHTAPbF

(V)

GEth

V

Energy (µJ)

4.5

4.0

3.5

3.0

2.5

1400

1200

1000

800

600

400

200

25 °C

125 °C

0.1

IC (mA)

Fig. 7 - Typical Gate Threshold Voltage

E

on

E

off

"Half-Bridge" IGBT MTP

(Warp2 Speed IGBT), 70 A

350

300

250

200

150

Current (mA)

100

- Collector to Emitter

C

I

1.0

160

140

120

(ns)

rr

t

100

Vishay High Power Products

50

0

100 200 300 400 500 600

0

IC - Collector to Emitter Voltage (V)

Fig. 10 - Reverse BIAS SOA, TJ = 150 °C

VR = 200 V

IF = 70 A, 125 °C

IF = 70 A, 25 °C

80

700

0

0

20 40 60

IC - Collector to Emitter Current (A)

Fig. 8 - Typical Energy Losses vs. I

1000

t

f

100

Switching Time (ns)

10

0

20 40 60

IC - Collector to Emitter Current (A)

Fig. 9 - Switching Time vs. I

t

d(off)

t

d(on)

C

80

( TJ = 150 °C)

t

r

80

C

60

100

dIF/dt - (A/µs)

Fig. 11 - Typical Reverse Recovery Time vs. dI

40

VR = 200 V

35

30

IF = 70 A, 125 °C

IF = 70 A, 25 °C

(A)

RRM

I

25

20

15

10

5

100

dIF/dt - (A/µs)

Fig. 12 - Typical Reverse Recovery Current vs. dI

1000

F

1000

/dt

/dt

F

Document Number: 94469 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 06-May-08 5

70MT060WHTAPbF

Vishay High Power Products

2000

1800

1600

1400

1200

(nC)

1000

RR

Q

800

600

400

200

100

1

"Half-Bridge" IGBT MTP

(Warp2 Speed IGBT), 70 A

VR = 200 V

IF = 70 A, 125 °C

IF = 70 A, 25 °C

1000

dIF/dt - (A/µs)

Fig. 13 - Typical Stored Charge vs. dIF/dt

0.1

0.01

- Thermal Impedance (°C/W)

thJC

Z

0.001

1.0

0.1

0.01

0.00001

0.0001 0.001

- Thermal Impedance (°C/W)

thJC

Z

0.001

0.00001

D = 0.75
D = 0.50
D = 0.33

Single Pulse

(Thermal Resistance)

D = 0.25
D = 0.20

0.01

t1 - Rectangular Pulse Duration (s)

Fig. 14 - Maximum Thermal Impedance Z

D = 0.75
D = 0.50
D = 0.50

Single pulse

(thermal resistance)

0.0001

0.001

D = 0.33
D = 0.25
D = 0.20

t1 - Rectangular Pulse Duration (s)

Fig. 15 - Maximum Thermal Impedance Z

0.1

Characteristics (IGBT)

thJC

0.01

Characteristics (Diode)

thJC

0.1

1.0

10

1.0

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Document Number: 94469

6 Revision: 06-May-08

70MT060WHTAPbF

(Warp2 Speed IGBT), 70 A

3, 4

11

12

5, 6

9

10

7, 8

Fig. 16 - Electrical Diagram Fig. 17 - Functional Diagram

ORDERING INFORMATION TABLE

Device code

T

Thermistor

option

70 MT 060 W H T A PbF

"Half-Bridge" IGBT MTP

2

R

1

Vishay High Power Products

3, 4

10

11

12

9

10

Ω

10 Ω

10 Ω

10 Ω

7, 8

5, 6

1 - Current rating (70 = 70 A)

2 - Essential part number

3 - Voltage rating (060 = 600 V)

4 - Speed/Type (W = Warp IGBT)

5 - Circuit configuration (H = Half bridge)

6

7

8

CIRCUIT CONFIGURATION

51324678

- T = Thermistor

- A = Al2O3 DBC substrate

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95175

Document Number: 94469 For technical questions, contact: [e-mail]
Revision: 06-May-08 7

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Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

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Revision: 18-Jul-08 1