C&H Technology 6F10 User Manual
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Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 6 A
FEATURES
• High surge current capability
• Avalanche types available
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V V
• RoHS compliant
6F(R) Series
RoHS
COMPLIANT
RRM
DO-203AA (DO-4
TYPICAL APPLICATIONS
• Converters
PRODUCT SUMMARY
I
F(AV)
6 A
• Power supplies
• Machine tool controls
• Battery charges
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
t
I
V
RRM
T
J
T
C
50 Hz 159
60 Hz 167
50 Hz 134
60 Hz 141
Range 100 to 1200 V
6A
160 °C
9.5 A
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE
NUMBER
6F(R)
Note
(1)
Avalanche version only available from V
VOLTAGE
CODE
10 100 150 -
20 200 275 -
40 400 500 500
60 600 725 750
80 800 950 950
100 1000 1200 1150
120 1200 1400 1350
, MAXIMUM
RRM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400 V to 1200 V
RRM
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
, MINIMUM
R(BR)
AVALANCHE VOLTAGE
(1)
V
A
A2s
I
RRM
AT T
MAXIMUM
= 175 °C
J
mA
12
Document Number: 93519 For technical questions, contact: ind-modules@vishay.com
Revision: 29-Sep-08 1
www.vishay.com
6F(R) Series
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 6 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
Maximum RMS forward current I
Maximum non-repetitive peak reverse power P
I
F(AV)
F(RMS)
R
180° conduction, half sine wave
(1)
10 µs square pulse, TJ = TJ maximum 4 K/W
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms 167
t = 10 ms
t = 8.3 ms 141
t = 10 ms
Maximum I
2
t for fusing I2t
t = 8.3 ms 116
t = 10 ms
t = 8.3 ms 82
2
Maximum I
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum forward voltage drop V
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1270 A2√s
F(TO)1
F(TO)2
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
f1
(I > π x I
f2
Ipk = 19 A, TJ = 25 °C, tp = 400 µs rectangular wave 1.10 V
FM
Note
(1)
Available only for avalanche version, all other parameters the same as 6F
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
RRM
Sinusoidal half wave,
initial T
T
maximum
J
RRM
=
J
reapplied
< I < π x I
F(AV)
), TJ = TJ maximum 0.86
F(AV)
< I < π x I
F(AV)
), TJ = TJ maximum 5.6
F(AV)
), TJ = TJ maximum 0.63
F(AV)
), TJ = TJ maximum 15.7
F(AV)
6A
160 °C
9.5 A
159
134
127
90
A
A
V
mΩ
2
s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style See dimensions - link at the end of datasheet DO-203AA (DO-4)
www.vishay.com For technical questions, contact: ind-modules@vishay.com
2 Revision: 29-Sep-08
T
J
- 65 to 175
°C
T
Stg
R
thJC
DC operation 2.5
- 65 to 200
K/W
R
thCS
Mounting surface, smooth, flat and greased 0.5
Lubricated threads
(Not lubricated threads)
1.2
(1.5)
N · m
(lbf · in)
7g
0.25 oz.
Document Number: 93519
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