C&H Technology 50RIA User Manual
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Suite 108
Minnetonka, MN 55345
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Vishay High Power Products
Medium Power Thyristors
(Stud Version), 50 A
FEATURES
• High current rating
• Excellent dynamic characteristics
• dV/dt = 1000 V/µs option
• Superior surge capabilities
• Standard package
• Metric threads version available
50RIA Series
RoHS
COMPLIANT
TO-208AC (TO-65)
• Types up to 1200 V V
DRM/VRRM
• RoHS compliant
TYPICAL APPLICATIONS
• Phase control applications in converters
PRODUCT SUMMARY
I
T(AV)
50 A
• Lighting circuits
• Battery charges
• Regulated power supplies and temperature and speed
control circuit
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 1430
60 Hz 1490
50 Hz 10.18
60 Hz 9.30
Typical 110 µs
50 A
94 °C
80 A
A
kA2s
100 to 1200 V
- 40 to 125 °C
Document Number: 93711 For technical questions, contact: ind-modules@vishay.com
Revision: 19-Sep-08 1
www.vishay.com
50RIA Series
Vishay High Power Products
Medium Power Thyristors
(Stud Version), 50 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM
TYPE NUMBER
VOLTAGE
CODE
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
10 100 150
20 200 300
40 400 500
50RIA
60 600 700
80 800 900
100 1000 1100
120 1200 1300
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
(2)
For voltage pulses with tp ≤ 5 ms
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Maximum on-state voltage V
Maximum holding current I
Latching current I
I
T(AV)
T(RMS)
I
TSM
T(TO)1
T(TO)2
r
t1
r
t2
TM
H
L
, MAXIMUM
V
, MAXIMUM NON-REPETITIVE
V
RSM
(1)
PEAK VOLTAGE
V
(2)
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
MAXIMUM
mA
15
180° sinusoidal conduction
50 A
94 °C
80 A
t = 10 ms
t = 8.3 ms 1490
t = 10 ms
t = 8.3 ms 1255
t = 10 ms
t = 8.3 ms 9.30
t = 10 ms
t = 8.3 ms 6.56
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
= TJ maximum
J
t = 0.1 to 10 ms, no voltage reapplied,
T
= TJ maximum
J
(16.7 % x π x I
(π x I
< I < 20 x π x I
T(AV)
(16.7 % x π x I
(π x I
< I < 20 x π x I
T(AV)
T(AV)
T(AV)
< I < π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.94
T(AV)
), TJ = TJ maximum 1.08
), TJ = TJ maximum 4.08
T(AV)
), TJ = TJ maximum 3.34
1430
1200
10.18
7.20
101.8 kA
Ipk = 157 A, TJ = 25 °C 1.60 V
TJ = 25 °C, anode supply 22 V, resistive load,
= 2 A
initial I
T
200
Anode supply 6 V, resistive load 400
A
kA2s
V
mΩ
mA
2
√s
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 93711
2 Revision: 19-Sep-08
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