C&H Technology 50MT060WHTAPbF User Manual

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MTP

Vishay High Power Products

"Half-Bridge" IGBT MTP

(Warp Speed IGBT), 114 A

FEATURES

• Generation 4 warp speed IGBT technology

• HEXFRED
reverse recovery

• Very low conduction and switching losses

• Optional SMD thermistor (NTC)

• Very low junction to case thermal resistance

• ULE78996 approved

• Operating frequency 60 to 100 kHz

• Totally lead (Pb)-free

• Designed and qualified for industrial level

®

antiparallel diodes with ultrasoft

50MT060WHTAPbF

RoHS

COMPLIANT

PRODUCT SUMMARY

V

CES

typical at VGE = 15 V 2.3 V

V

CE(on)

at TC = 25 °C 114 A

I

C

600 V

BENEFITS

• Optimized for welding, UPS and SMPS applications

• Low EMI, requires less snubbing

• Direct mounting to heatsink

• PCB solderable terminals

• Very low stray inductance design for high speed operation

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation P

CES

C

CM

LM

F

FM

GE

ISOL

D

TC = 25 °C 114

= 109 °C 50

T

C

TC = 109 °C 34

Any terminal to case, t = 1 min 2500

TC = 25 °C 658

T

= 100 °C 263

C

600 V

350

350

200

± 20

A

V

W

Document Number: 94468 For technical questions, contact: [e-mail]
Revision: 06-May-08 1

www.vishay.com

50MT060WHTAPbF

Vishay High Power Products

"Half-Bridge" IGBT MTP

(Warp Speed IGBT), 114 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Collector to emitter voltage V

Gate threshold voltage V

Collector to emitter leaking current I

Diode forward voltage drop V

Gate to emitter leakage current I

(BR)CESVGE

CE(on)

GE(th)IC

CES

FM

GES

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on switching loss E

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

g

ge

gc

on

off

ts

on

off

ts

ies

oes

res

rr

rr

rr

rr

rr

rr

= 0 V, IC = 500 µA 600 - - V

VGE = 15 V, IC = 50 A - 2.3 3.15

V

= 15 V, IC = 100 A - 2.5 3.2

GE

= 15 V, IC = 50 A, TJ = 150 °C - 1.72 2.17

V

GE

= 0.5 mA 3 - 6

VGE = 0 V, IC = 600 A - - 0.4

V

= 0 V, IC = 600 A, TJ = 150 °C - - 10

GE

IF = 50 A, VGE = 0 V - 1.58 1.80

= 50 A, VGE = 0 V, TJ = 150 °C - 1.49 1.68

F

= 100 A, VGE = 0 V, TJ = 25 °C - 1.9 2.17

I

F

VGE = ± 20 V - - ± 250 nA

IC = 52 A

= 400 V

V

CC

V

= 15 V

GE

Internal gate resistors (see electrical diagram)
I

= 50 A, VCC = 480 V, VGE = 15 V, L = 200 µH

C

Energy losses include tail and diode reverse
recovery

Internal gate resistors (see electrical diagram)

= 50 A, VCC = 480 V, VGE = 15 V, L = 200 µH

I

C

Energy losses include tail and diode reverse
recovery, T

= 150 °C

J

VGE = 0 V
V

= 30 V

CC

f = 1.0 mHz

- 331 385

-4452

- 133 176

-0.26-

-1.2-

-1.46-

-0.73-

-1.66-

-2.39-

- 7100 -

-510-

-140-

-8297ns
VCC = 200 V, IC = 50 A
dI/dt = 200 A/µs

- 8.3 10.6 A

- 340 514 nC

VCC = 200 V, IC = 50 A
dI/dt = 200 A/µs
T

= 125 °C

J

- 137 153 ns

- 12.7 14.8 A

- 870 1132 nC

V

mA

VI

nCGate to emitter charge (turn-on) Q

mJTurn-off switching loss E

mJTurn-off switching loss E

pFOutput capacitance C

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94468

2 Revision: 06-May-08

50MT060WHTAPbF

"Half-Bridge" IGBT MTP

Vishay High Power Products

(Warp Speed IGBT), 114 A

THERMISTOR SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

β

0

(1)(2)

Resistance R

Sensitivity index of the
thermistor material

Notes

(1)

T0, T1 are thermistor´s temperatures

R

0

(2)

------­R

1

⎛⎞

β

exp=

------

⎝⎠

T

1

1

, temperature in Kelvin

–

-----­T

0

1

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction
temperature range

Storage temperature range T

Junction to case

Case to sink Module R

Clearance

Creepage

(1)

(1)

Mounting torque to heatsink

Weight 66 g

Notes

(1)

Standard version only i.e. without optional thermistor

IGBT, Diode

IGBT

R

T

J

Stg

thJC

thCS

T0 = 25 °C - 30 - kΩ

T0 = 25 °C
T

= 85 °C

1

- 4000 - K

- 40 - 150

- 40 - 125

--0.38

Heatsink compound thermal conductivity = 1 W/mK - 0.06 -

External shortest distance in air between
two terminals

Shortest distance along the external surface of the
insulating material between 2 terminals

5.5 - -

8--

A mounting compound is recommended and the
torque should be checked after 3 hours to allow for

3 ± 10 % Nm

the spread of the compound. Lubricated threads.

°CThermistor - 40 - 125

°C/WDiode --0.8

mm

100

VGE = 15 V
20 µs pulse width

10

- Collector to Emitter Current (A)

C

I

1

0.1

TJ = 150 °C

1.0

VCE - Collector to Emitter Voltage (V)

TJ = 25 °C

10

120

100

80

60

40

20

Maximum DC Collector Current (A)

0

25

50 75 100 125

TC - Case Temperature (°C)

150

Fig. 1 - Typical Output Characteristics Fig. 2 - Maximum Collector Current vs. Case Temperature

Document Number: 94468 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 06-May-08 3

50MT060WHTAPbF

Vishay High Power Products

3.0

2.5

2.0

Voltage (V)

1.5

- Typical Collector to Emitter

CE

V

1.0

40 60 80 100 120 140

20

TJ - Junction Temperature (°C)

Fig. 3 - Typical Collector to Emitter Voltage vs.

Junction Temperature

20

Vcc = 400 V

= 52 A

I

c

16

IC = 100 A

IC = 50 A

IC = 20 A

"Half-Bridge" IGBT MTP

(Warp Speed IGBT), 114 A

160

140

120

(ns)

rr

t

100

80

160

60

Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt

100

100

VR = 200 V

VR = 200 V

IF = 50 A, TJ = 125 °C

IF = 50 A, TJ = 25 °C

1000

dIF/dt - (A/µs)

IF = 50 A, TJ = 125 ˚C

12

8

4

- Gate to Emitter Voltage (V)

GE

V

0

0

100 200 300

OG - Typical Gate Charge (nC)

Fig. 4 - Typical Gate Charge vs.

Gate to Emitter Votlage

100

10

- Instantaneous

F

I

Forward Current (A)

TJ = 150 °C

= 125 °C

T

J

T

= 25 °C

J

400

(A)

10

RRM

I

1

100

IF = 50 A, TJ = 25 ˚C

dIF/dt - (A/µs)

Fig. 7 - Typical Reverse Recovery Current vs. dI

( nC)

RR

Q

2000

1500

1000

VR = 200V

IF = 50 A, TJ = 125 °C

500

IF = 50 A, TJ = 25 °C

1000

/dt

F

1

0.4

0.8 1.2 1.6 2.0

V

- Forward Voltage Drop (V)

FM

Fig. 5 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

2.4

0

100

dIF/dt - (A/µs)

Fig. 8 - Typical Stored Charge vs. dI

1000

/dt

F

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94468

4 Revision: 06-May-08

50MT060WHTAPbF

(Warp Speed IGBT), 114 A

3, 4

11

12

5, 6

9

10

7, 8

Fig. 9 - Functional Diagram Fig. 10 - Electrical Diagram

ORDERING INFORMATION TABLE

Device code

T

Thermistor

option

50 MT 060 W H T A PbF

"Half-Bridge" IGBT MTP

2

R

1

Vishay High Power Products

3, 4

10

11

12

9

10

Ω

10 Ω

10 Ω

10 Ω

7, 8

5, 6

1 - Current rating (50 = 50 A)

2 - Essential part number

3 - Voltage rating (060 = 600 V)

4 - Speed/Type (W = Warp IGBT)

5 - Circuit configuration (H = Half bridge)

6

7

8

CIRCUIT CONFIGURATION

51324678

- T = Thermistor

- A = Al2O3 substrate

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95175

Document Number: 94468 For technical questions, contact: [e-mail]
Revision: 06-May-08 5

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Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1