C&H Technology 40MT120UHTAPbF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

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Application

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40MT120UHAPbF, 40MT120UHTAPbF

Vishay High Power Products

"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A

FEATURES

• Ultrafast Non Punch Through (NPT) technology

temperature coefficient

CE(on)

®

antiparallel diodes with ultrasoft reverse

F

MTP

•Positive V

• 10 μs short circuit capability

• Square RBSOA

•HEXFRED
recovery and low V

•Al2O3 DBC

• Optional SMD thermistor (NTC)

• Very low stray inductance design for high speed operation

• UL approved file E78996

• Speed 8 kHz to 60 kHz

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

PRODUCT SUMMARY

V

CES

typical at VGE = 15 V 3.36 V

V

CE(on)

at TC = 25 °C 80 A

I

C

1200 V

• Optimized for welding, UPS and SMPS applications

• Rugged with ultrafast performance

• Benchmark efficiency above 20 kHz

• Outstanding ZVS and hard switching operation

• Low EMI, requires less snubbing

• Excellent current sharing in parallel operation

• Direct mounting to heatsink

• PCB solderable terminals

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter breakdown voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation (only IGBT) P

CES

C

CM

LM

F

FM

GE

ISOL

D

TC = 25 °C 80

= 104 °C 40

T

C

TC = 105 °C 21

Any terminal to case, t = 1 min 2500

TC = 25 °C 463

T

= 100 °C 185

C

1200 V

160

160

160

± 20

A

V

W

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94507 For technical questions, contact: [e-mail]
Revision: 01-Mar-10 1

www.vishay.com

40MT120UHAPbF, 40MT120UHTAPbF

Vishay High Power Products

"Half Bridge" IGBT MTP

(Ultrafast NPT IGBT), 80 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter
breakdown voltage

Temperature coefficient of
breakdown voltage

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

Transconductance g

Zero gate voltage collector current I

Gate to emitter leakage current I

ΔV

V

(BR)CES

(BR)CES

VGE = 0 V, IC = 250 μA 1200 - - V

/ΔTJVGE = 0 V, IC = 3 mA (25 °C to 125 °C) - + 1.1 - V/°C

VGE = 15 V, IC = 40 A - 3.36 3.59

= 15 V, IC = 80 A - 4.53 4.91

V

GE

= 15 V, IC = 40 A, TJ = 150 °C - 3.88 4.10

V

GE

= 15 V, IC = 80 A, TJ = 150 °C - 5.35 5.68

V

GE

VCE = VGE, IC = 500 μA 4 - 6

VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C

J

VCE = 50 V, IC = 40 A, PW = 80 μs - 35 - S

VGE = 0 V, V

= 0 V, V

V

GE

V

= 0 V, V

GE

= 1200 V, TJ = 25 °C - - 250 μA

CE

= 1200 V, TJ = 125 °C - 0.4 1.0

CE

= 1200 V, TJ = 150 °C - 0.2 10

CE

VGE = ± 20 V - - ± 250 nA

V

CE(on)

GE(th)

GE(th)

/ΔT

fe

CES

GES

V

mA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

g

ge

gc

on

off

tot

on

off

tot

ies

oes

res

Reverse bias safe operating area RBSOA

Short circuit safe operating area SCSOA

IC = 40 A

= 600 V

V

CC

= 15 V

V

GE

VCC = 600 V, IC = 40 A, VGE = 15 V,

= 5 Ω, L = 200 μH, TJ = 25 °C,

R

g

energy losses include tail and diode
reverse recovery

VCC = 600 V, IC = 40 A, VGE = 15 V,
R

= 5 Ω, L = 200 μH, TJ = 125 °C,

g

energy losses include tail and diode
reverse recovery

VGE = 0 V

= 30 V

V

CC

f = 1.0 MHz

= 150 °C, IC = 160 A

T

J

= 1000 V, Vp = 1200 V

V

CC

R

= 5 Ω, VGE = + 15 V to 0 V

g

T

= 150 °C,

J

= 900 V, Vp = 1200 V

V

CC

R

= 5 Ω, VGE = + 15 V to 0 V

g

- 399 599

-4365

nCGate to emitter charge (turn-on) Q

- 187 281

- 1.14 1.71

- 1.35 2.02

- 2.49 3.73

- 1.60 2.40

mJ

- 1.62 2.43

- 3.22 4.82

- 5521 8282

- 380 570

pFOutput capacitance C

- 171 257

Fullsquare

10 - - μs

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94507

2 Revision: 01-Mar-10

40MT120UHAPbF, 40MT120UHTAPbF

"Half Bridge" IGBT MTP

Vishay High Power Products

(Ultrafast NPT IGBT), 80 A

DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IC = 40 A - 2.98 3.38

= 80 A - 3.90 4.41

I

C

= 40 A, TJ = 125 °C - 3.08 3.39

Diode forward voltage drop V

Reverse recovery energy of the diode E

FM

rec

Diode reverse recovery time t

Peak reverse recovery current I

THERMISTOR SPECIFICATIONS (40MT120UHTAPbF only)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Resistance R

Sensitivity index of the
thermistor material

Notes

(1)

T0, T1 are thermistor´s temperatures

R

0

(2)

-------

R

1

⎛⎞

β

exp=

------

⎝⎠

T

1

1

–

, temperature in Kelvin

------

T

0

1

0

(1)(2)

β

I

C

= 80 A, TJ = 125 °C - 4.29 4.72

I

C

= 40 A, TJ = 150 °C - 3.12 3.42

I

C

VGE = 15 V, Rg = 5 Ω, L = 200 μH

= 600 V, IC = 40 A

V

rr

rr

(1)

CC

T

= 125 °C

J

T0 = 25 °C - 30 - kΩ

T0 = 25 °C
T

= 85 °C

1

- 574 861 μJ

- 120 180 ns

-4365A

- 4000 - K

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction temperature range T

Storage temperature range T

Junction to case

IGBT

Case to sink per module R

Clearance

Creepage

(1)

(2)

R

J

Stg

thJC

thCS

Heatsink compound thermal conductivity = 1 W/mK - 0.06 -

External shortest distance in air between 2 terminals 5.5 - -

Shortest distance along external surface of the
insulating material between 2 terminals

A mounting compound is recommended and the

Mounting torque to heatsink

torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.

Weight 66 g

- 40 - 150

- 40 - 125

- - 0.29

8- -

3 ± 10 % Nm

°C

°C/WDiode - - 0.61

mm

Document Number: 94507 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Mar-10 3

40MT120UHAPbF, 40MT120UHTAPbF

Vishay High Power Products

"Half Bridge" IGBT MTP

(Ultrafast NPT IGBT), 80 A

100

80

60

)
A

(

C

I

40

20

0

0 20406080100120140160

TC(°C)

Fig. 1 - Maximum DC Collector Current vs. Case Temperature

600

500

400

)
W

(

300

D

P

200

100

0

0 20406080100120140160

TC(°C)

Fig. 2 - Power Dissipation vs. Case Temperature

1000

100

)
A

(

C

I

10

1

10 100 1000 10 000

V

(V)

CE

Fig. 4 - Reverse BIAS SOA

= 150 °C; VGE = 15 V

T

J

160

VGE = 18V

140

VGE = 1 5V
VGE = 1 2V

120

VGE = 1 0V
VGE = 8.0V

100

)
A

(

80

E
C

I

60

40

20

0

0246810

V

(V)

CE

Fig. 5 - Typical IGBT Output Characteristics

T

= - 40 °C; tp = 80 μs

J

1000

100

10

)
A

(

C

I

1

0.1

0.01
1 10 100 1000 10000

V

(V)

CE

Fig. 3 - Forward SOA

T

= 25 °C; TJ ≤ 150 °C

C

10 μs

100 μs

10ms

DC

160

VGE = 18V

140

VGE = 15V
VGE = 12V

120

VGE = 10V
VGE = 8.0V

100

)
A

(

80

E
C

I

60

40

20

0

0246810

V

(V)

CE

Fig. 6 - Typical IGBT Output Characteristics

T

= 25 °C; tp = 80 μs

J

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94507

4 Revision: 01-Mar-10

40MT120UHAPbF, 40MT120UHTAPbF

"Half Bridge" IGBT MTP

(Ultrafast NPT IGBT), 80 A

160

VGE = 18V

140

VGE = 1 5V
VGE = 1 2V

120

VGE = 1 0V
VGE = 8.0V

100

)
A

(

80

E
C

I

60

40

20

0

0246810

V

(V)

CE

Fig. 7 - Typical IGBT Output Characteristics

120

100

80

)
A

(

60

F

I

40

20

0

Fig. 8 - Typical Diode Forward Characteristics

T

= 125 °C; tp = 80 μs

J

-40°C
25°C
125°C

0.0 1.0 2.0 3.0 4.0 5.0

VF(V)

t

= 80 μs

p

Vishay High Power Products

20

18

16

14

12

)
V

(

10

E
C

V

8

6

4

2

0

5101520

V

GE

Fig. 10 - Typical V

TJ = 25 °C

20

18

16

14

12

)
V

(

10

E
C

V

8

6

4

2

0

5101520

V

GE

Fig. 11 - Typical V

TJ = 125 °C

(V)

(V)

CE

CE

ICE = 80A

I

CE

I

CE

vs. V

ICE = 80A

I

CE

I

CE

vs. V

= 40A

= 20A

GE

= 40A

= 20A

GE

20

(V)

CE

ICE = 80A

I

I

vs. V

CE

CE

= 40A

= 20A

GE

18

16

14

12

)
V

(

10

E
C

V

8

6

4

2

0

5101520

V

GE

Fig. 9 - Typical V

TJ = - 40 °C

350

300

250

)

200

A
(

E
C

150

I

100

50

0

0 5 10 15 20

TJ = 25°C

TJ= 125°C

V

GE

(V)

Fig. 12 - Typical Transfer Characteristics

V

= 50 V; tp = 10 μs

CE

Document Number: 94507 For technical questions, contact: [e-mail]

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Revision: 01-Mar-10 5

40MT120UHAPbF, 40MT120UHTAPbF

Vishay High Power Products

4800

4200

3600

)

3000

J
μ

(
y

2400

g
r

e
n

1800

E

1200

600

1000

)
s
n

(
e
m

i
T

g
n

i
h
c

i
w
S

E

ON

E

OFF

0

0 20406080100

IC(A)

Fig. 13 - Typical Energy Loss vs. I

TJ = 125 °C; L = 250 μH; VCE = 400 V

R

= 5 Ω; VGE = 15 V

g

td

100

t

R

td

t

10

0 20 40 60 80 100

IC(A)

Fig. 14 - Typical Switching Time vs. I

TJ = 125 °C; L = 250 μH; VCE = 400 V

R

= 5 Ω; VGE = 15 V

g

"Half Bridge" IGBT MTP

(Ultrafast NPT IGBT), 80 A

C

OFF

ON

F

C

10 000

)
s

1000

n
(

e
m

i
T

g
n

i
h
c

i
w

100

S

10

0 10 20 30 40 50 60

Rg (Ω)

Fig. 16 - Typical Switching Time vs. R

T

= 150 °C; L = 250 μH; VCE = 600 V

J

I

= 40 A; VGE = 15 V

CE

50

R

40

30

)
A

(

rr

I

20

10

0

10 20 30 40 50 60 70

IF(A)

R

R

R

Fig. 17 - Typical Diode I

TJ = 125 °C

g =

g

g

g

rr

10

=

30

=

50

=

vs. I

5.0

td

OFF

td

t

R

t

F

Ω

Ω

Ω

Ω

F

ON

g

6000

E

5000

)

4000

J
μ

(
y

g
r

e
n

3000

E

2000

1000

0 10 20 30 40 50 60

ON

Rg (Ω)

Fig. 15 - Typical Energy Loss vs. R

TJ = 150 °C; L = 250 μH; VCE = 600 V

I

= 40 A; VGE = 15 V

CE

E

OFF

g

50

40

)
A

(

30

rr

I

20

10

0 10 20 30 40 50 60

Rg(

Ω)

Fig. 18 - Typical Diode I

TJ = 125 °C; IF = 40 A

vs. R

rr

g

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94507

6 Revision: 01-Mar-10

τ

τ

40MT120UHAPbF, 40MT120UHTAPbF

50

45

40

35

)
A

(

30

rr

I

25

20

15

10

0 200 400 600 800 1000

dIF/dt (A/μs)

Fig. 19 - Typical Diode Irr vs. dIF/dt

V

= 600 V; VGE = 15 V; ICE = 40 A; TJ = 125 °C

CC

5.0

4.5

4.0

3.5

)

3.0

C
μ

(

2.5

rr

Q

50

Ω

30

2.0

1.5

Ω

10

Ω

5.0

Ω

1.0

0.5

0.0
0 200 400 600 800 1000 1200

dIF /dt (A/μs)

Fig. 20 - Typical Diode Q

V

= 600 V; VGE = 15 V; TJ = 125 °C

CC

vs. dIF/dt

rr

20A

"Half Bridge" IGBT MTP

(Ultrafast NPT IGBT), 80 A

60A

40A

Vishay High Power Products

10000

Cies

)

1000

F
p

(
e

c
n
a

t

i
c
a
p
a

100

C

10

0 20 40 60 80 100

V

Fig. 21 - Typical Capacitance vs. V

VGE = 0 V; f = 1 MHz

16

14

12

10

)
V

(

8

E
G

V

6

4

2

0

0 100 200 300 400 500

QG, Total Gate Charge (nC)

Fig. 22 - Typical Gate Charge vs. V

ICE = 5.0 A; L = 600 μH

CE

Coes

Cres

(V)

CE

600V

GE

1

1

D = 0.50

D = 0.50

)

)

0.1

0.1

C

C
J

J
h

h

t

t

Z

Z
(

(

0.01

0.01

e

e
s

s
n

n
o

o
p

p
s

s
e

e

0.001

0.001

R

R
l

l
a

a
m

m
r

r
e

e
h

h

0.0001

0.0001

T

T

1E-005

1E-005

0.20

0.20

0.10

0.10

0.05

0.05

0.02

0.02

0.01

0.01

SINGLE PULSE

SINGLE PULSE
( THERMAL RESPONSE )

( THERMAL RESPONSE)

1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10

1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10

t1, Rectangular Pulse Duration (sec)

t1, Rectangular Pulse Duration (sec)

R

R

R

1

1

R

R

τ

τ

J

J

τ

τ

J

J

τ

τ

1

1

τ

τ

1

1

Ci= τi/Ri

Ci= τi/Ri

R

R

R

2

3

2

3

Ri (°C/W) τi (sec)

R

R

2

2

τ

τ

3

3

τ

τ

Ri (°C/W) τi (sec)

3

3

τ

τ

C

C

0.043 0.001214

0.105 0.044929

3

3

0.123 1.1977

0.123 1.1977

R

R

1

1

τ

τ

2

2

τ

τ

2

2

Notes:

Notes:

1. Duty Factor D = t1/t2

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

2. Peak Tj = P dm x Zthjc + Tc

Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)

Document Number: 94507 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Mar-10 7

τ

40MT120UHAPbF, 40MT120UHTAPbF

Vishay High Power Products

1

D = 0.50

)

C
J
h

t

Z
(

e
s
n
o
p
s
e

R
l
a

m
r

e
h
T

0.001

0.01

0.20

0.1

0.10

0.05

0.02

0.01

SINGLE PULSE
( THERMAL RESPONSE)

1E-006 1E-005 0.0001 0.001 0.01

Fig. 24 - Maximum Transient Thermal Impedance, Junction to Case (Diode)

11

12

9

10

"Half Bridge" IGBT MTP

(Ultrafast NPT IGBT), 80 A

R

1

R

1

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

t1, Rectangular Pulse Duration (sec)

3, 4

2

T

5, 6

40MT120UHTAPbF

1

Thermistor

option only for

R

2

Ri (°C/W) τi (sec)

R

2

τ

C

τ

2

τ

2

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.024 0.00008

0.549 0.000098

R

7, 8

Fig. 25 - Electrical diagram

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Document Number: 94507

8 Revision: 01-Mar-10

40MT120UHAPbF, 40MT120UHTAPbF

0

1 K

D.U.T.

Fig. CT.1 - Gate Charge Circuit (Turn-Off)

L

"Half Bridge" IGBT MTP

(Ultrafast NPT IGBT), 80 A

L

V

CC

+

-

Diode clamp/

D.U.T.

Vishay High Power Products

Driver

D

+

C

D.U.T.

Fig. CT.3 - S.C. SOA Circuit

L

900 V

-

80 V

+

-

R

g

Fig. CT.2 - RBSOA Circuit

D.U.T.

1000 V

+

-

- 5 V

D.U.T./

driver

R

g

Fig. CT.4 - Switching Loss Circuit

+

-

V

CC

Document Number: 94507 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Mar-10 9

40MT120UHAPbF, 40MT120UHTAPbF

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

40 MT 120 U H T A PbF

1 - Current rating (40 = 40 A)

2 - Essential part number

3 - Voltage code (120 = 1200 V)

4 - Speed/type (U = Ultrafast IGBT)

5 - Circuit configuration (H = Half bridge)

6

- Special option:

- A = Al2O3 DBC substrate

7

- PbF = Lead (Pb)-free

8

"Half Bridge" IGBT MTP

(Ultrafast NPT IGBT), 80 A

51324678

None = No special option

T = Thermistor

CIRCUIT CONFIGURATION

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95175

www.vishay.com For technical questions, contact: [e-mail]
10 Revision: 01-Mar-10

Document Number: 94507

DIMENSIONS in millimeters

Ø 1.1Ø 5

3.5

33

31.8

12 ± 0.5

4

20.5

2.5

876543

2

1

13

9

10 11

12

1.8

8.1

45°

5.4 ± 0.1

5.7 ± 0.1

1.2 ± 0.1

7.2 ± 0.1

7.8 ± 0.1

3 ± 0.1

27.5

11.35

± 0.1

11.35

± 0.1

R2.6 (x 3)

R5.8 (x 2)

8.7 ± 0.1

6 ± 0.1

3 ± 0.1

8.5 ± 0.1

39.5 ± 0.1

44.5

48.7

63.5 ± 0.25

1.3

Outline Dimensions

Vishay Semiconductors

MTP

Note

• Unused terminals are not assembled in the package

Document Number: 95175 For technical questions, contact: [e-mail]
Revision: 18-Mar-08 1

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Legal Disclaimer Notice

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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Document Number: 91000