C&H Technology 25RIA User Manual

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TO-208AA (TO-48)

Vishay High Power Products

Medium Power Thyristors

(Stud Version), 25 A

FEATURES

• Improved glass passivation for high reliability
and exceptional stability at high temperature

• High dI/dt and dV/dt capabilities

• Standard package

• Low thermal resistance

• Metric threads version available

• Types up to 1200 V V

• RoHS compliant

• Designed and qualified for industrial and consumer level

TYPICAL APPLICATIONS

25RIA Series

RoHS

COMPLIANT

DRM/VRRM

PRODUCT SUMMARY

I

T(AV)

25 A

• Medium power switching

• Phase control applications

• Can be supplied to meet stringent military, aerospace and
other high reliability requirements

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 420

60 Hz 440

50 Hz 867

60 Hz 790

Typical 110 µs

25 A

85 °C

40 A

A

A2s

100 to 1200 V

- 65 to 125 °C

Document Number: 93701 For technical questions, contact: [e-mail]
Revision: 19-Sep-08 1

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25RIA Series

Vishay High Power Products

Medium Power Thyristors

(Stud Version), 25 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE
NUMBER

VOLTAGE

CODE

V

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

(1)

10 100 150

20 200 300

40 400 500

25RIA

60 600 700

80 800 900

100 1000 1100

120 1200 1300

Notes

(1)

Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs

(2)

For voltage pulses with tp ≤ 5 ms

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of
on-state slope resistance

High level value of
on-state slope resistance

Maximum on-state voltage V

Maximum holding current I

Latching current I

I

T(AV)

T(RMS)

I

TSM

180° sinusoidal conduction

40 A

t = 10 ms

t = 8.3 ms 440

t = 10 ms

t = 8.3 ms 370

t = 10 ms

t = 8.3 ms 790

t = 10 ms

t = 8.3 ms 560

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

t = 0.1 to 10 ms, no voltage reapplied,

= TJ maximum

T

J

T(TO)1

T(TO)2

r

t1

r

t2

TM

H

L

(16.7 % x π x I
T

= TJ maximum

J

(I > π x I
(16.7 % x π x I

T

= TJ maximum

J

(I > π x I

Ipk = 79 A, TJ = 25 °C 1.70 V

TJ = 25 °C, anode supply 6 V, resistive load

T(AV)

), TJ = TJ maximum 1.40

T(AV)

T(AV)

), TJ = TJ maximum 5.7

T(AV)

V

RRM

RRM

< I < π x I

< I < π x I

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

(2)

V

Sinusoidal
half wave,
initial T

=

J

maximum

T

J

),

T(AV)

),

T(AV)

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

mA

20

10

25 A

85 °C

420

350

867

615

8670 A

0.99

10.1

130

200

MAXIMUM

A

A

2

V

mΩ

mA

2

s

√s

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Document Number: 93701

2 Revision: 19-Sep-08

25RIA Series

Medium Power Thyristors

Vishay High Power Products

(Stud Version), 25 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

V

≤ 600 V

DRM

≤ 800 V 180

V

Maximum rate of rise
of turned-on current

DRM

V

≤ 1000 V 160

DRM

≤ 1600 V 150

V

DRM

Typical turn-on time t

Typical reverse recovery time t

Typical turn-off time t

dI/dt

gt

rr

q

= TJ maximum, VDM = Rated V

T

J

DRM

Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum

= (2 x rated dI/dt) A

I

TM

TJ = 25 °C,
at rated V

DRM/VRRM

, TJ = 125 °C

TJ = TJ maximum,
I

= I

TM

TJ = TJ maximum, ITM = I
dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % V

, tp > 200 µs, dI/dt = - 10 A/µs

T(AV)

T(AV)

, tp > 200 µs, VR = 100 V,

DRM

gate bias 0 V to 100 W

Note

= 10 µs up to 600 V, tq = 30 µs up to 1600 V available on special request

•t

q

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

= TJ maximum linear to 100 % rated V

T

Maximum critical rate of rise
of off-state voltage

dV/dt

J

= TJ maximum linear to 67 % rated V

T

J

Note

(1)

Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 25RIA120S90

DRM

DRM

200

0.9

4

,

110

100

(1)

300

A/µs

µs

V/µs

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak negative gate voltage -V

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GT

GT

GD

GD

TJ = TJ maximum

TJ = TJ maximum 1.5 A

TJ = TJ maximum 10 V

TJ = - 65 °C

= 25 °C 60

J

= 125 °C 35

T

J

Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied

TJ = - 65 °C 3.0

= 25 °C 2.0

T

J

T

= 125 °C 1.0

J

TJ = TJ maximum, V

= Rated value 2.0 mA

DRM

Maximum gate current/voltage

TJ = TJ maximum,
V

= Rated value

DRM

not to trigger is the maximum
value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

8.0

2.0

90

mAT

0.2 V

W

V

Document Number: 93701 For technical questions, contact: [e-mail]

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Revision: 19-Sep-08 3

25RIA Series

Vishay High Power Products

Medium Power Thyristors

(Stud Version), 25 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
and storage temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Allowable mounting torque

Approximate weight

Case style See dimensions - link at the end of datasheet TO-208AA (TO-48)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180°

120°

90°

60°

30°

Note

• The table above shows the increment of thermal resistance R

T

, T

J

Stg

R

R

thJC

thCS

DC operation 0.75

Mounting surface, smooth, flat and greased 0.35

Non-lubricated threads

Lubricated threads

0.17 0.13

0.21 0.22

0.27 0.30

0.40 0.42

0.69 0.70

when devices operate at different conduction angles than DC

thJC

- 65 to 125 °C

+ 0 - 10 %

3.4
(30)

+ 0 - 10 %

23

(20)

14 g

0.49 oz.

= TJ maximum K/W

T

J

(lbf ⋅ in)

K/W

N · m

130

120

110

100

90

Maximum Allowable Case Temperature (°C)

80

0 5 10 15 20 25 30

25RIA Seri es
R (DC) = 0.75 K/W

thJC

Conducti on Angle

30°

60°

90°

120°

Average On-state Current (A)

180°

130

120

110

100

90

Maximum Allowable Case Temperature (°C)

80

010203040

25RIA Series
R (DC) = 0.75 K/W

thJC

Conducti on Period

30°

60°

90°

120°

180°

Average On-state Current (A)

DC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

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Document Number: 93701

4 Revision: 19-Sep-08

25RIA Series

Medium Power Thyristors

(Stud Version), 25 A

45

180°

40

120°

35

30

25

20

15

10

Maxi mum Ave rag e On- sta te P owe r Lo ss (W)

60

55

50

45

40

35

30

25

20

15

10

Maximum Average On-state Power Loss (W)

90°
60°
30°

RMS Limit

Conducti on Angle

25RIA Series
T = 125°C

5

0

0 5 10 15 20 25 30

J

Average On-state Current (A)

Fig. 3 - On-State Power Loss Characteristics

DC
180°
120°

90°
60°
30°

RMS Li mi t

Conductio n Period

25RIA Seri es
T = 125°C

J

5

0

0 5 10 15 20 25 30 35 40

Average On-state Current (A)

Fig. 4 - On-State Power Loss Characteristics

Vishay High Power Products

R

t

h

S

2

K

/

3

K

/

W

4

K

/

W

5

K

/

W

7

K

/

W

0 255075100125

Maxi mu m All owabl e Amb ient Tempe ratur e (° C)

R = 1 K/W- D

t

h

2

K

/

W

3

K

/

W

4

K

/

W

5

K

/

W

7

K

/

W

0255075100125

Maximum Allowable Ambient Temperature (°C)

A

=

W

S

A

1

K

/

W

­D

e

l

t

a

R

elt

aR

375

350

325

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

300

275

250

225

25RI A Ser i es

200

Peak Half Sine Wave On-state Current (A)

175

110100

Number Of Equal Ampli tude Half Cycl e Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

450

Max i mum Non Repet it iv e Surge Cur ren t

425

400

375

350

325

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

Initial T = 125°C

J

No Voltage Reapplied

Rated V Reapplied

RRM

300

275

250

225

200

25RIA Series

175

Peak Hal f Sin e Wav e On-st ate Current (A)

150

0.01 0.1 1

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

Document Number: 93701 For technical questions, contact: [e-mail]

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Revision: 19-Sep-08 5

25RIA Series

Vishay High Power Products

1000

100

Instantaneous On-state Current (A)

1

Steady State Value

R = 0.75 K/W

thJC

thJC

(DC Operation)

Medium Power Thyristors

(Stud Version), 25 A

25RIA Series

10

1

0.5 1 1.5 2 2.5

Instantaneous On-state Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

T = 25°C

J

T = 125°C

J

0.1

25RIA Series

Transient Thermal Impedance Z (K/W)

0.0 1

0.001 0.01 0. 1 1 10

Square Wave Pulse Durati on (s)

Fig. 8 - Thermal Impedance Z

100

Rectangular gate pul se
a) Recommended load line for
rated di/dt : 10V, 20ohms
tr <=0.5 µs, t p >= 6 µs
b) Recommended load line for

<=30% rated di/dt : 10V, 65ohms

10

tr<=1 µs, tp >= 6 µs

(b)

Tj = 25 °C

1

VGD

Instantaneous Gate Voltage (V)

0.1

IGD

0.001 0.01 0.1 1 10 100

Tj = 125 °C

Instantaneous Gate Current (A)

(a)

Tj = -65 °C

25RIA Series Frequency Limited by PG(AV)

Characteristics

thJC

(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms

(1)

Fig. 9 - Gate Characteristics

(2)

(3)

(4)

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Document Number: 93701

6 Revision: 19-Sep-08

25RIA Series

Medium Power Thyristors

Vishay High Power Products

(Stud Version), 25 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95333

25 RIA 120 M S90

51324

1 - Current code

- Essential part number

2

- Voltage code x 10 = V

3

- None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A

4

M = Stud base TO-208AA (TO-48) M6 x 1

- Critical dV/dt:

5

None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)

LINKS TO RELATED DOCUMENTS

(see Voltage Ratings table)

RRM

Document Number: 93701 For technical questions, contact: [e-mail]
Revision: 19-Sep-08 7

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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