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MTP
Vishay High Power Products
"Full-Bridge" IGBT MTP
(Warp Speed IGBT), 50 A
FEATURES
• Generation 4 warp speed IGBT technology
• HEXFRED
reverse recovery
• Very low conduction and switching losses
• Optional SMT thermistor
•Al
2O3
• Very low stray inductance design for high speed operation
• UL pending
• Operating frequencies 8 to 60 kHz > 20 kHz hard
switching, > 200 kHz resonant mode
• Totally lead (Pb)-free
• Designed and qualified for industrial level
®
antiparallel diodes with ultrasoft
DBC
25MT060WFAPbF
RoHS
COMPLIANT
PRODUCT SUMMARY
V
CES
DC 69 A
I
C
V
at 25 A, 25 °C 2.22 V
CE(on)
600 V
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
BENEFITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Peak switching current I
Diode continuous forward current I
Peak diode forward current I
Gate to emitter voltage V
RMS isolation voltage V
Maximum power dissipation
per single IGBT
CES
C
CM
LM
F
FM
GE
ISOL
P
D
TC = 25 °C 69
= 80 °C 46
T
C
TC = 100 °C 25
Any terminal to case, t = 1 min 2500
TC = 25 °C 195
T
= 100 °C 78
C
600 V
200
200
200
± 20
A
V
W
Document Number: 94539 For technical questions, contact: ind-modules@vishay.com
Revision: 30-May-08 1
www.vishay.com
25MT060WFAPbF
Vishay High Power Products
"Full-Bridge" IGBT MTP
(Warp Speed IGBT), 50 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Temperature coefficient of breakdown voltage ΔV
Collector to emitter saturation voltage V
Gate threshold voltage V
Temperature coefficient of threshold voltage ΔV
Transconductance g
Zero gate voltage collector current I
Gate to emitter leakage current I
Diode forward voltage drop V
Note
(1)
I
includes also opposite leg overall leakage
CES
(BR)CES
(BR)CES
CE(on)
GE(th)
GE(th)
fe
CES
GES
FM
(1)
VGE = 0 V, IC = 250 µA 600 - - V
/ΔTJVGE = 0 V, IC = 4 mA (25 to 125 °C) - + 0.6 - V/°C
VGE = 15 V, IC = 25 A - 2.22 3.14
= 15 V, IC = 50 A - 2.43 3.25
V
GE
= 15 V, IC = 25 A, TJ = 150 °C - 1.65 1.93
V
GE
= 15 V, IC = 50 A, TJ = 150 °C - 2.08 2.45
V
GE
VCE = VGE, IC = 250 µA 3 - 6
/ΔTJVCE = VGE, IC = 250 µA (25 to 125 °C) - - 17 - mV/°C
VCE = 100 V, IC = 25 A, PW = 80 µs - 43 - S
VGE = 0 V, V
= 0 V, V
V
GE
= 600 V, TJ = 25 °C - - 250 µA
CE
= 600 V, TJ = 150 °C - - 10 mA
CE
VGE = ± 20 V - - ± 250 nA
IC = 25 A - 1.36 1.64
= 50 A - 1.57 1.93
I
C
= 25 A; TJ = 150 °C - 1.19 1.42
I
C
= 50 A; TJ = 150 °C - 1.48 1.80
I
C
V
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Input capacitance C
Reverse transfer capacitance C
Diode reverse recovery time t
Diode peak reverse current I
Diode Recovery charge Q
Diode peakrate of fall of
recovery during t
b
dI
(rec)M
g
ge
gc
on
off
tot
on
off
tot
ies
oes
res
rr
rr
rr
IC = 25 A
= 480 V
V
CC
V
= 15 V
GE
Rg = 5 Ω, IC = 25 A
= 480 V
V
CC
V
= ± 15 V
GE
Rg = 5 Ω, IC = 25 A
V
= 480 V
CC
= ± 15 V, TJ = 125 °C
V
GE
VGE = 0 V
V
= 30 V
CC
f = 1.0 MHz
VR = 200 V;
I
= 25 A;
C
dI/dt = 200 A/µs
/dt - 250 - A/µs
- 175 263
-2741
nCGate to emitter charge (turn-on) Q
- 71 107
- 0.13 0.20
- 0.42 0.62
- 0.55 0.82
- 0.39 0.59
mJ
- 0.49 0.74
- 0.88 1.32
- 3610 5415
- 714 1071
pFOutput capacitance C
-5887
-50- ns
-4.5- A
-112- nC
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94539
2 Revision: 30-May-08