C&H Technology 25MT060WFAPbF User Manual

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MTP

Vishay High Power Products

"Full-Bridge" IGBT MTP

(Warp Speed IGBT), 50 A

FEATURES

• Generation 4 warp speed IGBT technology

• HEXFRED
reverse recovery

• Very low conduction and switching losses

• Optional SMT thermistor

•Al

2O3

• Very low stray inductance design for high speed operation

• UL pending

• Operating frequencies 8 to 60 kHz > 20 kHz hard
switching, > 200 kHz resonant mode

• Totally lead (Pb)-free

• Designed and qualified for industrial level

®

antiparallel diodes with ultrasoft

DBC

25MT060WFAPbF

RoHS

COMPLIANT

PRODUCT SUMMARY

V

CES

DC 69 A

I

C

V

at 25 A, 25 °C 2.22 V

CE(on)

600 V

• Optimized for welding, UPS and SMPS applications

• Low EMI, requires less snubbing

• Direct mounting to heatsink

• PCB solderable terminals

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

BENEFITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation
per single IGBT

CES

C

CM

LM

F

FM

GE

ISOL

P

D

TC = 25 °C 69

= 80 °C 46

T

C

TC = 100 °C 25

Any terminal to case, t = 1 min 2500

TC = 25 °C 195

T

= 100 °C 78

C

600 V

200

200

200

± 20

A

V

W

Document Number: 94539 For technical questions, contact: [e-mail]
Revision: 30-May-08 1

www.vishay.com

25MT060WFAPbF

Vishay High Power Products

"Full-Bridge" IGBT MTP

(Warp Speed IGBT), 50 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Temperature coefficient of breakdown voltage ΔV

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coefficient of threshold voltage ΔV

Transconductance g

Zero gate voltage collector current I

Gate to emitter leakage current I

Diode forward voltage drop V

Note

(1)

I

includes also opposite leg overall leakage

CES

(BR)CES

(BR)CES

CE(on)

GE(th)

GE(th)

fe

CES

GES

FM

(1)

VGE = 0 V, IC = 250 µA 600 - - V

/ΔTJVGE = 0 V, IC = 4 mA (25 to 125 °C) - + 0.6 - V/°C

VGE = 15 V, IC = 25 A - 2.22 3.14

= 15 V, IC = 50 A - 2.43 3.25

V

GE

= 15 V, IC = 25 A, TJ = 150 °C - 1.65 1.93

V

GE

= 15 V, IC = 50 A, TJ = 150 °C - 2.08 2.45

V

GE

VCE = VGE, IC = 250 µA 3 - 6

/ΔTJVCE = VGE, IC = 250 µA (25 to 125 °C) - - 17 - mV/°C

VCE = 100 V, IC = 25 A, PW = 80 µs - 43 - S

VGE = 0 V, V

= 0 V, V

V

GE

= 600 V, TJ = 25 °C - - 250 µA

CE

= 600 V, TJ = 150 °C - - 10 mA

CE

VGE = ± 20 V - - ± 250 nA

IC = 25 A - 1.36 1.64

= 50 A - 1.57 1.93

I

C

= 25 A; TJ = 150 °C - 1.19 1.42

I

C

= 50 A; TJ = 150 °C - 1.48 1.80

I

C

V

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse current I

Diode Recovery charge Q

Diode peakrate of fall of
recovery during t

b

dI

(rec)M

g

ge

gc

on

off

tot

on

off

tot

ies

oes

res

rr

rr

rr

IC = 25 A

= 480 V

V

CC

V

= 15 V

GE

Rg = 5 Ω, IC = 25 A

= 480 V

V

CC

V

= ± 15 V

GE

Rg = 5 Ω, IC = 25 A
V

= 480 V

CC

= ± 15 V, TJ = 125 °C

V

GE

VGE = 0 V
V

= 30 V

CC

f = 1.0 MHz

VR = 200 V;
I

= 25 A;

C

dI/dt = 200 A/µs

/dt - 250 - A/µs

- 175 263

-2741

nCGate to emitter charge (turn-on) Q

- 71 107

- 0.13 0.20

- 0.42 0.62

- 0.55 0.82

- 0.39 0.59

mJ

- 0.49 0.74

- 0.88 1.32

- 3610 5415

- 714 1071

pFOutput capacitance C

-5887

-50- ns

-4.5- A

-112- nC

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94539

2 Revision: 30-May-08

25MT060WFAPbF

"Full-Bridge" IGBT MTP

Vishay High Power Products

(Warp Speed IGBT), 50 A

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction temperature range T

Storage temperature range T

Junction to case

IGBT

Case to sink per module R

Clearance

Creepage

(1)

(1)

R

J

Stg

thJC

thCS

Heatsink compound thermal conductivity = 1 W/mK - 0.06 -

Externel shortest distance in air between two terminals 5.5 - -

Shortest distance along external surface of the
insulating material between 2 terminals

Weight 66 g

Note

(1)

Standard version only i.e. without optional thermistor

160

140

120

100

80

60

Case Temperature (°C)

40

C

T

20

0

0 1020304050607080

IC Maximum DC Collector Current (A)

Fig. 1 - Maximum Collector Current vs.

Case Temperature

2.75

)
V

(
e

g
a

t

l
o
V

2.25

r
e

t

t

i
m
E
o

t

­r

o

t
c

1.75

e

l

l
o

C
,

E
C

V

1.25

20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig. 2 - Typical Collector to Emitter Voltage vs.

Junction Temperature

- 40 - 150

- 40 - 125

- - 0.64

8--

IC= 50A

IC= 25A

IC=

12.5A

°C

°C/WDiode --0.9

mm

1

D = 0.5

)

thJC

Thermal Response (Z

0.0001

D = 0.2

0.1

D = 0.1

D = 0.05
D = 0.02

0.01

D =0.01

Single Pulse

0.001

(Thermal Response)

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10

t1, Rectangular Pulse Duration (sec)

Fig. 3 - Maximum Transient Thermal Impedance,

Junction to Case (IGBT)

Document Number: 94539 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 30-May-08 3

25MT060WFAPbF

0.1

0

0.0

Vishay High Power Products

10

)

C

1

J

thJC

h

t

D = 0.50

0.20

0.10

0.1

0.05

0.0

0.02

.0

0.01

0.01

Thermal Response (Z

0.001

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

7000

6000

5000

)
F
p

(

4000

e
c
n
a

t

i
c

3000

a
p
a

C

2000

1000

0

1 10 100 1000

Cies

Coes

Cres

VGE = 0V, f = 1 MHZ

C

= Cge+Cgc, CceSHORTED

ies

C

= C

res

gc

C

= C

oes

ce

V

(V)

CE

Fig. 5 - Typical Capacitance vs.

Collector to Emitter Voltage

SINGLE PULSE
( THERMAL RESPONSE )

+ C

gc

"Full-Bridge" IGBT MTP

(Warp Speed IGBT), 50 A

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

t1, Rectangular Pulse Duration (sec)

Fig. 4 - Maximum Transient Thermal Impedance,

Junction to Case (Diode)

1.5
VCC= 480V

VGE = 15V

TJ= 25°C

I

)
J

m
(

s
e
s
s
o
L

g
n

i
h
c

t

i
w
S

= 25A

C

1.0

0.5

0.0

0 10 20 30 40 50 60

Fig. 7 - Typical Switching Losses vs.

E

OFF

E

ON

RG, Gate Resistance (Ω)

Gate Resistance

16.0

IC= 25A

V

= 480V

)
V

(
e

g
a

t

l
o
V
r
e

t

t

i
m

E

­o

t

­e

t
a

G
,

E
G

V

CE

12.0

8.0

4.0

0.0

0 50 100 150 200

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs.

Gate to Emitter Voltage

10

RG= 5.0Ω
VGE= 15V

VCC= 480V

)
J

m
(

s
e
s
s
o
L

g

1

n

i
h
c

t

i
w
S

l
a

t
o
T

0.1

20 40 60 80 100 120 140 160

IC= 50A

IC= 25A

IC= 12.5A

TJ, Junction Temperature (°C)

Fig. 8 - Typical Switching Losses vs.

Junction Temperature

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94539

4 Revision: 30-May-08

A

25MT060WFAPbF

2.0
RG= 5.0

Ω

TJ = 25°C
VGE= 15V

VCC= 480V

1.5

)
J

m
(

s
e
s
s
o

1.0

L
g

n

i
h
c

t

i
w
S

0.5

0.0

0 10 20 30 40 50 60

E

OFF

IC, Collector Current (A)

Fig. 9 - Typical Switching Losses vs.

Collector to Emitter Current

1000

V

= 20V

GE

TJ = 125°

)
A

(
t
n
e

r
r

u

100

C
r
e

t

t

i
m

E

­o

t

­r

o

t

10

c
e

l

l
o

C

,
C

I

1

1 10 100 1000

SAFE OPERATING AREA

VCE, Collector-to-Emitter Voltage (V)

Fig. 10 - Turn-Off SOA

"Full-Bridge" IGBT MTP

(Warp Speed IGBT), 50 A

E

ON

Vishay High Power Products

140

120

100

I = 50A

F

80

I = 25A

F

trr- (nC)

I = 10A

F

60

40

20

di /dt - (A/μs)

f

Fig. 12 - Typical Reverse Recovery Time vs. dIF/dt

30

V = 200V

R

T = 125°C

J

T = 25°C

J

25

I = 50A

F

20

I = 25A

F

I = 10A

F

15

Irr- ( A)

10

5

0

di /dt - (A/μs)

Fig. 13 - Typical Reverse Recovery Current vs. dI

V = 200V

R

T = 125°C

J

T = 25°C

J

f

0001001

0001001

/dt

F

100

)
A

(

F

I

­t
n
e

r
r

u
C
d

r

10

a
w

r
o
F

s
u
o
e
n
a

t
n
a

t
s
n

I

TJ= 150°C

TJ= 125°C

TJ= 25°C

1

1400

1200

1000

Qrr- (nC)

800

600

400

200

0

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 50A

F

I = 25A

F

I = 10A

F

di /dt - (A/μs)

f

0001001

0.4 0.8 1.2 1.6 2.0 2.4

Forward Voltage Drop - VF( V )

Fig. 11 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

Fig. 14 - Typical Stored Charge vs. dI

/dt

F

Document Number: 94539 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 30-May-08 5

25MT060WFAPbF

A

Vishay High Power Products

10000

1000

di (rec) M/dt- (A /μs)

ORDERING INFORMATION TABLE

Device code

25 MT 060 W F A PbF

"Full-Bridge" IGBT MTP

(Warp Speed IGBT), 50 A

V = 200V

R

T = 1 25°C

J

T = 2 5°C

J

I = 50A

F

I = 25A

F

I = 10A

F

100

di /dt - (A/μs)

f

Fig. 15 - Typical dI

/dt vs. dIF/dt

(rec)M

0001001

CIRCUIT CONFIGURATION

51324

67

1 - Current rating (25 = 25 A)

2 - Essential part number

3 - Voltage code (060 = 600 V)

4 - Speed/type (W = Warp® IGBT)

5 - Circuit configuration (F = Full-bridge)

6

- A = Al2O3 DBC substrate

- PbF = Lead (Pb)-free

7

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95245

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94539

6 Revision: 30-May-08

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1