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25ETS..SPbF High Voltage Series
Input Rectifier Diode, 25 A
DESCRIPTION/FEATURES
Base
cathode
2
The 25ETS..SPbF rectifier High Voltage Series
has been optimized for very low forward
voltage drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150 °C junction temperature.
Vishay High Power Products
Available
RoHS*
COMPLIANT
D2PAK
1
Anode
Anode
3
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
PRODUCT SUMMARY
VF at 10 A 1 V
I
FSM
V
RRM
300 A
800/1200 V
outlines.
This product has been designed and qualified for industrial
level and lead (Pb)-free.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T
common heatsink of 1 °C/W
= 55 °C, TJ = 125 °C
A
20 23 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Sinusoidal waveform 25 A
800/1200 V
300 A
10 A, TJ = 25 °C 1.0 V
- 40 to 150 °C
VOLTAGE RATINGS
PART NUMBER
25ETS08SPbF 800 900
25ETS12SPbF 1200 1300
PEAK REVERSE VOLTAGE
V
, MAXIMUM
V
RRM
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94342 For technical questions, contact: diodes-tech@vishay.com
Revision: 06-Jun-08 1
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4420 A2√s
F(AV)
I
FSM
TC = 106 °C, 180 ° conduction half sine wave 25
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 300
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 442
applied 250
RRM
applied 316
RRM
A
2
A
s
www.vishay.com
25ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 25 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
FM
t
F(TO)
RM
25 A, TJ = 25 °C 1.14 V
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 1.0
J
V
= Rated V
R
RRM
9.62 mΩ
0.87 V
0.1
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style D
T
, T
J
Stg
DC operation 0.9
R
thJC
62
R
thJA
R
thCS
Mounting surface, smooth and greased 0.5
2
PAK (SMD-220)
- 40 to 150 °C
°C/W
2g
0.07 oz.
kgf · cm
(lbf · in)
25ETS08S
25ETS12S
mA
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94342
2 Revision: 06-Jun-08
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