C&H Technology 25ETSSPbF User Manual

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25ETS..SPbF High Voltage Series
Input Rectifier Diode, 25 A
DESCRIPTION/FEATURES
Base
cathode
2
The 25ETS..SPbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature.
Vishay High Power Products
Available
RoHS*
COMPLIANT
D2PAK
1
Anode
Anode
3
Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package
PRODUCT SUMMARY
VF at 10 A 1 V
I
FSM
V
RRM
300 A
800/1200 V
outlines.
This product has been designed and qualified for industrial level and lead (Pb)-free.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T common heatsink of 1 °C/W
= 55 °C, TJ = 125 °C
A
20 23 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Sinusoidal waveform 25 A
800/1200 V
300 A
10 A, TJ = 25 °C 1.0 V
- 40 to 150 °C
VOLTAGE RATINGS
PART NUMBER
25ETS08SPbF 800 900
25ETS12SPbF 1200 1300
PEAK REVERSE VOLTAGE
V
, MAXIMUM
V
RRM
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive surge current
2
Maximum I
Maximum I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94342 For technical questions, contact: diodes-tech@vishay.com Revision: 06-Jun-08 1
t for fusing I2t
2
t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4420 A2√s
F(AV)
I
FSM
TC = 106 °C, 180 ° conduction half sine wave 25
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 300
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 442
applied 250
RRM
applied 316
RRM
A
2
A
s
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25ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 25 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
FM
t
F(TO)
RM
25 A, TJ = 25 °C 1.14 V
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 1.0
J
V
= Rated V
R
RRM
9.62 mΩ
0.87 V
0.1
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, junction to ambient
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style D
T
, T
J
Stg
DC operation 0.9
R
thJC
62
R
thJA
R
thCS
Mounting surface, smooth and greased 0.5
2
PAK (SMD-220)
- 40 to 150 °C
°C/W
2g
0.07 oz.
kgf · cm (lbf · in)
25ETS08S
25ETS12S
mA
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94342
2 Revision: 06-Jun-08
25ETS..SPbF High Voltage Series
150
140
130
120
110
100
Temperature (°C)
90
Maximum Allowable Case
80
0
Fig. 1 - Current Rating Characteristics
150
140
130
120
Input Rectifier Diode, 25 A
25ETS..S Series
(DC) = 0.9 K/W
R
thJC
Ø
Conduction angle
3
60°
90°
120°
Average Forward Current (A)
25ETS..S Series R
(DC) = 0.9 K/W
thJC
Ø
Conduction period
18
Vishay High Power Products
60
50
40
30
20
Power Loss (W)
10
Maximum Average Forward
30252015105
0
300
200
DC
180° 120°
90° 60° 3
RMS limit
Ø
Conduction period
25ETS..S Series
= 150 °C
T
J
0
10 20 30
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
At any rated load condition and with rated V
applied following surge.
RRM
Initial T
J
at 60 Hz 0.0083 s at 50 Hz 0.0100 s
= 150 °C
40
110
Temperature (°C)
100
Maximum Allowable Case
90
0
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
40
180° 120°
35
30
25
20
15
10
Forward Current (A)
Peak Half Sine Wave
90° 60° 3
5
0
0
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
3
60°
90°
120°
18
DC
RMS limit
Ø
Conduction angle
25ETS..S Series T
= 150 °C
J
5 10152025
100
Forward Current (A)
Peak Half Sine Wave
25ETS..S Series
403530252015105
0
10 1001
Number of Equal Amplitude Half
Cycle Current Pulsed (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
300
200
100
Forward Current (A)
Peak Half Sine Wave
0
30
0.01 0.1 1 10
Maximum non-repetitive surge current versus pulse train duration.
Initial T No voltage reapplied Rated V
25ETS..S Series
= 150 °C
J
reapplied
RRM
Pulse Train Duration (s)
Fig. 6 - Maximum Non Repetitive Surge Current
Document Number: 94342 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 06-Jun-08 3
25ETS..SPbF High Voltage Series
Vishay High Power Products
- Instantaneous
F
I
Forward Current (A)
1
0.1
- Transient Thermal Impedance (°C/W)
thJC
Z
0.01
0.0001 0.001 0.01 0.1 1
Single pulse
Input Rectifier Diode, 25 A
1000
TJ = 25 °C
100
TJ = 150 °C
10
25ETS.. Series
1
0
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
123 4
Instantaneous Forward Voltage (V)
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
Square Wave Pulse Duration (s)
Characteristics
thJC
5
Steady state value (DC operation)
25ETS. .Series
100 10
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94342
4 Revision: 06-Jun-08
25ETS..SPbF High Voltage Series
ORDERING INFORMATION TABLE
Device code
25 E T S 12 S TRL PbF
1 - Current rating (25 = 25 A)
2 - Circuit configuration:
E = Single diode
3 - Package:
T = TO-220AC
4 - Type of silicon:
S = Standard recovery rectifier
5 - Voltage rating
6 -
7
8 -
S = TO-220 D
-
Input Rectifier Diode, 25 A
51324678
2
PAK (SMD-220) version
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
None = Standard production
PbF = Lead (Pb)-free
Vishay High Power Products
08 = 800 V
12 = 1200 V
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95046
Part marking information http://www.vishay.com/doc?95054
Packaging information http://www.vishay.com/doc?95032
Document Number: 94342 For technical questions, contact: diodes-tech@vishay.com Revision: 06-Jun-08 5
www.vishay.com
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com Revision: 12-Mar-07 1
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