C&H Technology 20MT120UF User Manual
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Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
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20MT120UF
Document Number: 93588
www.vishay.com
1
"FULL-BRIDGE" IGBT MTP
Features
• UltraFast Non Punch Through (NPT)
Technology
• Positive V
• 10µs Short Circuit Capability
• HEXFRED
UltraSoft Reverse Recovery
• Low Diode V
• Square RBSOA
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved (File E78996)
Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
Operation
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
Operation
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
Temperature Coefficient
CE(ON)
TM
Antiparallel Diodes with
F
UltraFast NPT IGBT
V
= 1200V
CES
I
= 40A
C
T
= 25°C
C
MMTP5/I27124 rev. D 02/03
Absolute Maximum Ratings
Parameters Max Units
V
I
I
I
I
I
V
V
P
CES
C
CM
LM
F
FM
GE
ISOL
D
Collector-to-Emitter Breakdown Voltage 1200 V
Continuos Collector Current @ TC = 25°C 40 A
Pulsed Collector Current 100
Clamped Inductive Load Current 100
Diode Continuous Forward Current @ TC = 106°C 25
Diode Maximum Forward Current 100
Gate-to-Emitter Voltage ± 20 V
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
Maximum Power Dissipation (only IGBT) @ TC = 25°C 240 W
@ TC = 106°C 20
@ TC = 100°C 96
20MT120UF
Document Number: 93588
www.vishay.com
2
I27124 rev. D 02/03
Electrical Characteristics @ T
Parameters Min Typ Max Units Test Conditions
V
(BR)CES
∆V
∆T
V
V
∆V
∆T
g
fe
I
CES
I
GES
(1) I
CE(ON)
GE(th)
Collector-to-Emitter Breakdown Voltage 1200 V VGE = 0V, IC = 250µA
/ Temperature Coeff. of +1.3 V/°C VGE = 0V, IC = 3mA (25-125°C)
(BR)CES
Breakdown Voltage
J
Collector-to-Emitter Saturation Voltage 3.29 3.59 V VGE = 15V, IC = 20A
Gate Threshold Voltage 4 6 V VCE = VGE, IC = 250µA
/ Temperature Coeff. of -14 mV/°C VCE = VGE, IC = 3mA (25-125°C)
GE(th)
Threshold Voltage
J
Transconductance 17.5 S VCE = 50V, IC = 20A, PW = 80µs
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current ±250 nA VGE = ± 20V
includes also opposite leg overall leakage
CES
Switching Characteristics @ T
Parameters Min Typ Max Units Test Conditions
= 25°C (unless otherwise specified)
J
4.42 4.66 VGE = 15V, IC = 40A
3.87 4.11 VGE = 15V, IC = 20A TJ = 125°C
5.32 5.70 VGE = 15V, IC = 40A TJ = 125°C
3.99 4.27 VGE = 15V, IC = 20A TJ = 150°C
(1)
250 µA VGE = 0V, VCE = 1200V, TJ = 25°C
0.7 3.0 mA VGE = 0V, VCE = 1200V, TJ = 125°C
2.9 9.0 VGE = 0V, VCE = 1200V, TJ = 150°C
= 25°C (unless otherwise specified)
J
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
Total Gate Charge (turn-on) 176 264 nC IC = 20A
Gate-Emitter Charge (turn-on) 19 30 VCC = 600V
Gate-Collector Charge (turn-on) 89 134 VGE = 15V
Turn-On Switching Loss 513 770 µJ VCC = 600V, IC = 20A
Turn-Off Switching Loss 402 603 VGE = 15V, Rg = 5Ω, L = 200µH
Total Switching Loss 915 1373 TJ = 25°C, Energy losses include tail
and diode reverse recovery
E
on
E
off
E
tot
Turn-On Switching Loss 930 1395 µJ VCC = 600V, IC = 20A
Turn-Off Switching Loss 610 915 VGE = 15V, Rg = 5Ω, L = 200µH
Total Switching Loss 1540 2310 TJ = 125°C, Energy losses include tail
and diode reverse recovery
C
ies
C
oes
C
res
Input Capacitance 2530 3790 pF VGE = 0V
Output Capacitance 344 516 VCC = 30V
Reverse Transfer Capacitance 78 117 f = 1.0 MHz
RBSOA Reverse Bias Safe Operating Area full square TJ = 150°C, IC = 120A
VCC = 1000V, Vp = 1200V
Rg = 5Ω, VGE = +15V to 0V
SCSOA Short Circuit Safe Operating Area 10 µs TJ = 150°C
VCC = 900V, Vp = 1200V
Rg = 5Ω, VGE = +15V to 0V
20MT120UF
Document Number: 93588
www.vishay.com
3
I27124 rev. D 02/03
Diode Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameters Min Typ Max Units Test Conditions
V
FM
E
rec
trr Diode Reverse Recovery Time 98 150 ns VCC = 600V, IC = 20A
Irr Peak Reverse Recovery Current 33 50 A TJ = 125°C
Diode Forward Voltage Drop 2.48 2.94 V IC = 20A
3.28 3.90 IC = 40A
2.44 2.84 IC = 20A, TJ = 125°C
3.45 4.14 IC = 40A, TJ = 125°C
2.21 2.93 IC = 20A, TJ = 150°C
Reverse Recovery Energy of the Diode 420 630 µJ VGE = 15V, Rg = 5Ω, L = 200µH
Thermal- Mechanical Specifications
Parameters Min Typ Max Units
T
J
T
STG
R
thJC
R
thCS
T Mounting Torque (2) 3 ± 10% Nm
Wt Weight 66 g (oz)
Operating Junction Temperature Range - 40 150 °C
Storage Temperature Range - 40 125
Junction-to-Case IGBT 0.35 0.52 °C/ W
Diode 0.40 0.61
Case-to-Sink Module 0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance (external shortest distance in air 5.5 mm
between two terminals)
Creepage (shortest distance along external 8
surface of the insulating material between 2 terminals)
(2) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
20MT120UF
Document Number: 93588
www.vishay.com
4
I27124 rev. D 02/03
(A)
C
I
1000
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
(W)
tot
P
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
100
10
(A)
C
I
1
0.1
0.01
1 10 100 1000 10000
V
(V)
CE
Fig. 3 - Forward SOA
TC = 25°C; T
≤ 150°C
J
10 µs
100 µs
1ms
DC
100
(A)
C
I
10
1
10 100 1000 10000
V
(V)
CE
Fig. 4 - Reverse Bias SOA
TJ = 150°C; V
GE
=15V
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