C&H Technology 20MT060KF User Manual

"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A

PRODUCT SUMMARY

V

CES

I

C(DC)

(typical)

V

CE(on)

= 20 A, 25 °C

at I

C

MTP

600 V

20 A at TC = 97 °C

1.9 V

20MT060KF

Vishay High Power Products

FEATURES

• Generation 5 Non Punch Through (NPT)
technology

•Positive V

• 10 μs short circuit capability

•FRED Pt® hyperfast rectifier

•Low V

CE(on)

• Square RBSOA

• Very low conduction and switching losses

• Very low stray inductance design for high speed operation

• UL approved file E78996

• Speed 8 kHz to 60 kHz

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Optimized for welding, UPS and SMPS applications

• Low EMI, requires less snubbing

• Excellent current sharing in parallel operation

• Direct mounting to heatsink

• PCB solderable terminals

• Very low junction to case thermal resistance

temperature coefficient

CE(on)

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation
per single IGBT

Document Number: 93223 For technical questions, contact: [e-mail]
Revision: 29-Apr-10 1

CES

C

CM

LM

F

FSM

GE

ISOL

P

TC = 25 °C 35

= 80 °C 24

T

C

TC = 95 °C 20

Any terminal to case, t = 1 minute 2500

D

TC = 25 °C 114

T

= 80 °C 64

C

600 V

70

70

70

± 20

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A

V

W

20MT060KF

Vishay High Power Products

"Full Bridge" IGBT MTP

(Ultrafast NPT IGBT), 20 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Temperature coefficient of breakdown voltage ΔV

(BR)CES

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coefficient of threshold voltage V

GE(th)

Collector to emitter leaking current I

Diode forward voltage drop V

Gate to emitter leakage current I

(BR)CES

CE(on)

GE(th)

/ΔT

CES

FM

GES

VGE = 0 V, IC = 500 μA 600 - - V

/ΔTJVGE = 0 V, IC = 1 mA (25 to 125 °C) - + 0.6 - V/°C

VGE = 15 V, IC = 20 A - 1.9 2.2

= 15 V, IC = 40 A - 2.57 3.0

V

GE

= 15 V, IC = 20 A, TJ = 125 °C - 2.22 2.5

V

GE

= 15 V, IC = 40 A, TJ = 125 °C - 3.15 3.5

V

GE

VCE = VGE, IC = 250 μA 3.5 4.4 5.5

VCE = VGE, IC = 1 mA (25 to 125 °C) - - 10 - mV/°C

J

VGE = 0 V, V

= 0 V, V

V

GE

= 600 V - 4 100

CE

= 600 V, TJ = 125 °C - 80 200

CE

VGE = 0 V, IF = 20 A - 1.63 1.9

= 0 V, IF = 40 A - 1.88 2.2

V

GE

= 0 V, IF = 20 A, TJ = 125 °C - 1.32 1.6

V

GE

= 0 V, IF = 40 A, TJ = 125 °C - 1.62 1.85

V

GE

VGE = ± 20 V - - ± 200 nA

V

μA

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Input capacitance C

Reverse transfer capacitance C

Reverse bias safe operating area RBSOA

Short circuit safe operating area SCSOA

ge

gc

on

off

tot

on

off

tot

d(on)

r

d(off)

f

ies

oes

res

g

IC = 20 A

= 300 V

V

CC

V

= 15 V

GE

VCC = 360 V, IC = 20 A, VGE = 15 V,

= 5 Ω, L = 500 μH,

R

g

energy losses include tail and
diode reverse recovery

VCC = 360 V, IC = 20 A, VGE = 15 V,
R

= 5 Ω, L = 500 μH, TJ = 125 °C,

g

energy losses include tail and
diode reverse recovery

VGE = 0 V

= 30 V

V

CC

f = 1.0 MHz

= 150 °C, IC = 70 A

T

J

V

= 400 V, Vp = 600 V

CC

R

= 22 Ω, VGE = + 15 V to 0 V

g

= 150 °C

T

J

V

= 400 V, Vp = 600 V

CC

R

= 22 Ω, VGE = + 15 V to 0 V

g

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 29-Apr-10

-72-

-16-

nCGate to emitter charge (turn-on) Q

-24-

-0.18-

-0.27-

-0.45-

-0.25-

mJ

-0.36-

-0.61-

-67-

-23-

- 101 -

ns

- 127 -

- 1316 -

- 335 -

pFOutput capacitance C

-40-

Fullsquare

10 - - μs

Document Number: 93223

20MT060KF

"Full Bridge" IGBT MTP

Vishay High Power Products

(Ultrafast NPT IGBT), 20 A

RECOVERY SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

rr

IF = 20 A
dI/dt = 200 A/μs

rr

V

rr

rr

IF = 20 A
dI/dt = 200 A/μs, V

rr

T

rr

= 400 V

R

= 125 °C

J

= 400 V

R

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction temperature range T

Storage temperature range T

Junction to case

IGBT

Case to sink per module R

Clearance External shortest distance in air between 2 terminals 5.5 - -

Creepage

Mounting torque

Weight 66 g

J

Stg

R

thJC

thCS

Shortest distance along external surface of the
insulating material between 2 terminals

A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.

- 85 106 ns

-4.56 A

- 188 318 nC

- 132 156 ns

-9.511A

- 626 842 nC

- 40 - 150

- 40 - 125

°C

--1.1

°C/WDiode - - 2.1

-0.06-

8--

mm

3 ± 10 % Nm

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0

93223_01

IC - Continuous Collector Current (A)

DC

20151053025 35

40

(A)

C

I

93223_02

100

10

1

0.1

0.01
1 10 100 1000

VCE (V)

Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 2 - IGBT Reverse BIAS SOA

T

= 150 °C; VGE = 15 V

J

Document Number: 93223 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 29-Apr-10 3