C&H Technology 20MT060KF User Manual

"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A
PRODUCT SUMMARY
V
CES
I
C(DC)
(typical)
V
CE(on)
= 20 A, 25 °C
at I
C
MTP
600 V
20 A at TC = 97 °C
1.9 V
20MT060KF
Vishay High Power Products
• Generation 5 Non Punch Through (NPT) technology
•Positive V
• 10 μs short circuit capability
•FRED Pt® hyperfast rectifier
•Low V
CE(on)
• Square RBSOA
• Very low conduction and switching losses
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
temperature coefficient
CE(on)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Peak diode forward current I
Gate to emitter voltage V
RMS isolation voltage V
Maximum power dissipation per single IGBT
Document Number: 93223 For technical questions, contact: indmodules@vishay.com Revision: 29-Apr-10 1
CES
C
CM
LM
F
FSM
GE
ISOL
P
TC = 25 °C 35
= 80 °C 24
T
C
TC = 95 °C 20
Any terminal to case, t = 1 minute 2500
D
TC = 25 °C 114
T
= 80 °C 64
C
600 V
70
70
70
± 20
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A
V
W
20MT060KF
Vishay High Power Products
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Temperature coefficient of breakdown voltage ΔV
(BR)CES
Collector to emitter saturation voltage V
Gate threshold voltage V
Temperature coefficient of threshold voltage V
GE(th)
Collector to emitter leaking current I
Diode forward voltage drop V
Gate to emitter leakage current I
(BR)CES
CE(on)
GE(th)
/ΔT
CES
FM
GES
VGE = 0 V, IC = 500 μA 600 - - V
/ΔTJVGE = 0 V, IC = 1 mA (25 to 125 °C) - + 0.6 - V/°C
VGE = 15 V, IC = 20 A - 1.9 2.2
= 15 V, IC = 40 A - 2.57 3.0
V
GE
= 15 V, IC = 20 A, TJ = 125 °C - 2.22 2.5
V
GE
= 15 V, IC = 40 A, TJ = 125 °C - 3.15 3.5
V
GE
VCE = VGE, IC = 250 μA 3.5 4.4 5.5
VCE = VGE, IC = 1 mA (25 to 125 °C) - - 10 - mV/°C
J
VGE = 0 V, V
= 0 V, V
V
GE
= 600 V - 4 100
CE
= 600 V, TJ = 125 °C - 80 200
CE
VGE = 0 V, IF = 20 A - 1.63 1.9
= 0 V, IF = 40 A - 1.88 2.2
V
GE
= 0 V, IF = 20 A, TJ = 125 °C - 1.32 1.6
V
GE
= 0 V, IF = 40 A, TJ = 125 °C - 1.62 1.85
V
GE
VGE = ± 20 V - - ± 200 nA
V
μA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Input capacitance C
Reverse transfer capacitance C
Reverse bias safe operating area RBSOA
Short circuit safe operating area SCSOA
ge
gc
on
off
tot
on
off
tot
d(on)
r
d(off)
f
ies
oes
res
g
IC = 20 A
= 300 V
V
CC
V
= 15 V
GE
VCC = 360 V, IC = 20 A, VGE = 15 V,
= 5 Ω, L = 500 μH,
R
g
energy losses include tail and diode reverse recovery
VCC = 360 V, IC = 20 A, VGE = 15 V, R
= 5 Ω, L = 500 μH, TJ = 125 °C,
g
energy losses include tail and diode reverse recovery
VGE = 0 V
= 30 V
V
CC
f = 1.0 MHz
= 150 °C, IC = 70 A
T
J
V
= 400 V, Vp = 600 V
CC
R
= 22 Ω, VGE = + 15 V to 0 V
g
= 150 °C
T
J
V
= 400 V, Vp = 600 V
CC
R
= 22 Ω, VGE = + 15 V to 0 V
g
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-72-
-16-
nCGate to emitter charge (turn-on) Q
-24-
-0.18-
-0.27-
-0.45-
-0.25-
mJ
-0.36-
-0.61-
-67-
-23-
- 101 -
ns
- 127 -
- 1316 -
- 335 -
pFOutput capacitance C
-40-
Fullsquare
10 - - μs
Document Number: 93223
20MT060KF
"Full Bridge" IGBT MTP
Vishay High Power Products
(Ultrafast NPT IGBT), 20 A
RECOVERY SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
rr
IF = 20 A dI/dt = 200 A/μs
rr
V
rr
rr
IF = 20 A dI/dt = 200 A/μs, V
rr
T
rr
= 400 V
R
= 125 °C
J
= 400 V
R
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
Storage temperature range T
Junction to case
IGBT
Case to sink per module R
Clearance External shortest distance in air between 2 terminals 5.5 - -
Creepage
Mounting torque
Weight 66 g
J
Stg
R
thJC
thCS
Shortest distance along external surface of the insulating material between 2 terminals
A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads.
- 85 106 ns
-4.56 A
- 188 318 nC
- 132 156 ns
-9.511A
- 626 842 nC
- 40 - 150
- 40 - 125
°C
--1.1
°C/WDiode - - 2.1
-0.06-
8--
mm
3 ± 10 % Nm
160
140
120
100
80
60
40
20
Allowable Case Temperature (°C)
0
0
93223_01
IC - Continuous Collector Current (A)
DC
20151053025 35
40
(A)
C
I
93223_02
100
10
1
0.1
0.01 1 10 100 1000
VCE (V)
Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 2 - IGBT Reverse BIAS SOA
T
= 150 °C; VGE = 15 V
J
Document Number: 93223 For technical questions, contact: indmodules@vishay.com
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Revision: 29-Apr-10 3
20MT060KF
Vishay High Power Products
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
100
90
80
70
60
50
(A)
C
I
40
30
20
10
0
03625147
93223_03
Fig. 3 - Typical IGBT Collector Current Characteristics
160
140
120
100
80
60
40
20
Allowable Case Temperature (°C)
0
0
93223_04
Fig. 4 - Maximum DC Forward Current vs. Case Temperature
TJ = 125 °C
TJ = 150 °C
TJ = 25 °C
VCE (V)
V
= 15 V
GE
DC
2515 302010535
IF - Continuous Forward Current (A)
40
1
TJ = 150 °C
0.1
TJ = 125 °C
0.01
(mA)
CES
I
0.001
0.0001
93223_06
100 600200 300 400 500
V
CES
TJ = 25 °C
(V)
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
5.0
TJ = 25 °C
TJ = 125 °C
IC (mA)
(V)
geth
V
93223_07
4.5
4.0
3.5
3.0
0.2 1.00.3 0.4 0.6 0.80.5 0.7 0.9
Fig. 7 - Typical IGBT Threshold Voltage
3.5
3.0
2.5
40 A
30 A
(V)
CE
V
93223_08
2.0
1.5
1.0 20 16040 80 120 14060 100
20 A
8 A
TJ (°C)
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
(A)
F
I
93223_05
100
90
80
70
60
50
40
30
20
10
0
03.00.5 1.0 1.5 2.0 2.5
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
VFM (V)
Fig. 5 - Typical Diode Forward Characteristics
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Document Number: 93223
4 Revision: 29-Apr-10
20MT060KF
0.8
0.7
0.6
Energy (mJ)
93223_09
0.5
0.4
0.3
0.2
0.1
0
01020 405030 60
E
off
E
on
IC (A)
Fig. 9 - Typical IGBT Energy Loss vs. IC, TJ = 125 °C
V
= 360 V, VGE = 15 V, L = 500 μH, Rg = 5 Ω
CC
1000
t
f
t
d(off)
100
t
d(on)
Switching Time (ns)
t
r
IC (A)
93223_10
10
020 504010 30 60
Fig. 10 - Typical IGBT Switching Time vs. I
V
= 360 V, VGE = 15 V, L = 500 μH, Rg = 5 Ω
CC
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
1000
100
Switching Time (ns)
93223_12
Fig. 12 - Typical IGBT Switching Time vs. R
190
170
150
130
110
(ns)
rr
t
90
70
50
93223_13
, TJ = 125 °C
C
Vishay High Power Products
t
f
t
d(on)
t
r
10
010 304020 50
Rg (Ω)
I
= 20 A, VCC = 360 V, VGE = 15 V, L = 500 μH
C
TJ = 125 °C
TJ = 25 °C
30
100
dIF/dt (A/μs)
Fig. 13 - Typical t
V
= 400 V; IF = 20 A
R
Diode vs. dIF/dt
rr
t
d(off)
, TJ = 125 °C
g
1000
(A)
rr
I
93223_14
30
25
20
15
10
5
0
100
TJ = 125 °C
dIF/dt (A/μs)
Fig. 14 - Typical I
V
= 400 V; IF = 20 A
R
TJ = 25 °C
Diode vs. dIF/dt
rr
1000
0.8
0.7
0.6
0.5
E
off
01020 4030 50
Rg (Ω)
Energy (mJ)
93223_11
0.4
0.3
0.2
0.1
0
Fig. 11 - Typical IGBT Energy Loss vs. R
I
= 20 A, VCC = 360 V, VGE = 15 V, L = 500 μH
C
E
on
, TJ = 125 °C
g
Document Number: 93223 For technical questions, contact: indmodules@vishay.com
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Revision: 29-Apr-10 5
20MT060KF
Vishay High Power Products
1200
1000
800
600
(nC)
rr
Q
400
200
0
93223_15
10
1
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
TJ = 125 °C
TJ = 25 °C
100
dIF/dt (A/μs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt
V
= 400 V; IF = 20 A
R
1000
0.1
- Thermal Impedance
0.01
Junction to Case (°C/W)
thJC
Z
0.001
0.00001
93223_16
10
1
0.1
- Thermal Impedance
Junction to Case (°C/W)
thJC
Z
0.01
0.00001
93223_17
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC
0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance Z
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC
0.0001 0.001 0.01 0.1 1
Characteristics (IGBT)
thJC
t1 - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance Z
Characteristics (Diode)
thJC
10
10
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Document Number: 93223
6 Revision: 29-Apr-10
20MT060KF
0
1 K
D.U.T.
Fig. C.T.1 - Gate Charge Circuit (Turn-Off)
L
80 V
+
-
R
g
D.U.T
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
L
V
CC
+
-
1000 V
Diode clamp/
D.U.T.
Vishay High Power Products
Driver
D
+
C
D.U.T.
Fig. C.T.3 - S.C. SOA Circuit
L
+
-
- 5 V
D.U.T./
driver
R
g
900 V
-
+
-
V
CC
Fig. C.T.2 - RBSOA Circuit
Fig. C.T.4 - Switching Loss Circuit
ORDERING INFORMATION TABLE
Device code
Document Number: 93223 For technical questions, contact: indmodules@vishay.com Revision: 29-Apr-10 7
20 MT 060 K F
- Current rating (20 = 20 A)
1
- Essential part number
2
- Voltage code (060 = 600 V)
3
- Speed/type (K = Ultrafast IGBT)
4
- Circuit configuration (F = Full bridge)
5
51324
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20MT060KF
Vishay High Power Products
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
CIRCUIT CONFIGURATION
9, 10
4
3
15, 16
13, 14
2
1
11, 12
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95245
5
6
7
8
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Document Number: 93223
DIMENSIONS in millimeters
Ø 5
Ø 1.1
12 ± 0.5
4
20.5
2.5
31.8
33
41
32
13
14
11
12
9
10
5
6
15
16
7
8
R5.75 (x 2)
27.5
11.4 ± 0.1
11.3 ± 0.1
Ø 5.2 x 3
3 ± 0.1
8 ± 0.1
0.3 ± 0.1
7
6.6 ± 0.1
7.4 ± 0.1
3 ± 0.1
5.3 ± 0.1
5.3
± 0.1
45°
0.6 x h1.2
63.5 ± 0.25
48.7
44.5
39.5
6.6 ± 0.1
7.4 ± 0.1
4.9 ± 0.1
8 ± 0.1
1.3
7 ± 0.1
Outline Dimensions
Vishay Semiconductors
MTP MOSFET/IGBT Full-Bridge
Document Number: 95245 For technical questions, contact: indmodules@vishay.com Revision: 24-Sep-08 1
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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Revision: 02-Oct-12
1
Document Number: 91000
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