C&H Technology 20ETSFP User Manual

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Bulletin I2134 rev. C 03/99

Document Number: 93503

www.vishay.com

1

INPUT RECTIFIER DIODE
TO-220 FULLP AK

Description/Features

The 20ETS..FP rectifier SAFE
optimized for very low forward voltage drop, with

moderate leakage. The glass passivation
technology used has reliable operation up to 150°C
junction temperature.

Typical applications are in input rectification and
these products are designed to be used with
International Rectifier Switches and Output
Rectifiers which are available in identical package
outlines. Fully isolated package (V

IR

series has been

= 2500 V

INS

RMS

).UL E78996 approved

SAFE

VF< 1V @ 10A
I

FSM

V

RRM

IR

Series

20ETS..FP

= 300A

800 to 1600V

Applications Single-phase Bridge Three-phase Bridge Units

Capacitive input filter TA = 55°C, TJ = 125°C,
common heatsink of 1°C/W

Major Ratings and Characteristics

Characteristics 20ETS..FP Units

I

Sinusoidal

F(AV)

waveform

V

RRM

I

FSM

VF@ 10 A, TJ = 25°C 1.0 V

T

J

20 A

800 to 1600 V

300 A

- 40 to 150 °C

18 22

Package Outline

TO-220 FULLPAKOutput Current in Typical Applications

A

20ETS..FP SAFE

Document Number: 93503

www.vishay.com

2

IR

Series

Bulletin I2134 rev. C 03/99

Voltage Ratings

V

Part Number

20ETS08FP 800 900 1
20ETS12FP 1200 1300
20ETS16FP 1600 1700

peak reverse voltage peak reverse voltage 150°C

Provide terminal coating for voltages above 1200V

, maximum V

RRM

VVmA

, maximum non repetitive I

RSM

Absolute Maximum Ratings

Parameters 20ETS..FP Units Conditions

Max. Average Forward Current 20 A @ TC = 88° C, 180° conduction half sine wave

F(AV)

I

Max. Peak One Cycle Non-Repetitive 250 10ms Sine pulse, rated V

FSM

Surge Current 300 10ms Sine pulse, no voltage reapplied

2

I

t Max. I2t for fusing 316 10ms Sine pulse, rated V

442 10ms Sine pulse, no voltage reapplied

2

I

√t Max. I2√t for fusing 4420 A2√s t = 0.1 to 10ms, no voltage reapplied

AA

2

s

RRM

RRM

Electrical Specifications

applied

applied

RRM

Parameters 20ETS..FP Units Conditions

VFMMax. Forward Voltage Drop 1.1 V @ 20A, TJ = 25°C
rtForward slope resistance 10.4 mΩ
V

Threshold voltage 0.85 V

F(TO)

IRMMax. Reverse Leakage Current 0.1 TJ = 25 °C

mA

TJ = 150°C

VR = rated V

1.0 TJ = 150 °C

Thermal-Mechanical Specifications

Parameters 20ETS..FP Units Conditions

TJMax. Junction Temperature Range - 40 to 150 °C

Max. Storage Temperature Range - 40 to 150 °C

T

stg

R

Max. Thermal Resistance Junction 1.5 °C/W DC operation

thJC

to Case

R

Max. Thermal Resistance Junction 62 °C/W

thJA

to Ambient

R

Typ. Thermal Resistance Case 1.5 °C/W Mounting surface, smooth and greased

thCS

to Heatsink

wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)

Max. 12 (10)

Case Style TO-220 FULLPAK (94/V0)

Kg-cm

I
(Ibf-in)

RRM

150

4

Document Number: 93503

www.vishay.com

3

140

130

120

110

100

90

80

Maxim um A llowab le C ase Tem per a ture (°C)

70

0246810121416182022

Average Forward Curren t (A)

20ET S.. Ser ies
R (DC) = 1 .5 K /W

thJC

30°

60°

Conduction Angle

90°

120°

Fig. 1 - Current Rating Characteristics

180°

20ETS..FP SAFE

IR

Bulletin I2134 rev. C 03/99

150

140

130

120

110

100

Maximum Allowable Case Temper ature (°C)

30°

90

80

0 5 10 15 20 25 30 35

20ETS.. Series
R (DC) = 1.5 K/W

thJC

Cond uction Peri od

60°

90°

120°

180°

Ave rage F orw ard C urrent (A)

Fig. 2 - Current Rating Characteristics

Series

DC

30

25

20

15

10

5

0

Maxim um A vera ge F orwar d Power Loss (W)

180°

120°

90°
60°
30°

RMS Limit

Conduction Angle

20ETS.. Series
T = 150°C

J

0 4 8 12 16 20 2

Av erage Forwa r d Current (A)

Fig. 3 - Forward Power Loss Characteristics

300

250

200

150

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

Init ial T = 150°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

35

30

25

20

15

10

5

0

Maximum Average Forward Power Loss (W)

0 5 10 15 20 25

DC

180°

120°

90°
60°
30°

RMS Limit

Cond uc tion P e riod

Average F or ward Current (A )

20ETS.. Series
T = 150°C

J

Fig. 4 - Forward Power Loss Characteristics

300

Maximum Non Repetitive Surge Current

J

250

200

150

Versus Pulse Train Duration.

Ini tial T = 150 °C

No Voltage Reapplied

Rated V Reapplied

J

RRM

100

20ET S.. Series

Peak Half Sine Wave Forward Current (A)

50

1 10 100

Num be r O f Eq ua l Am p litud e H a lf C ycle Curre nt P ulses (N )

Fig. 5 - Maximum Non-Repetitive Surge Current

100

20ET S.. Series

Peak Half Sine Wave Forward Current (A)

50

0.01 0.1 1
Pulse Tr ain Duration ( s )

Fig. 6 - Maximum Non-Repetitive Surge Current

20ETS..FP SAFE

4

Document Number: 93503

www.vishay.com

4

Bulletin I2134 rev. C 03/99

IR

Series

1000

T = 25°C

J

100

10

Ins tanta neous Forward Curre nt (A )

1

00.511.522.533.5

Instantaneous Fo rward V oltage ( V)

20ETS.. Series

T = 150°C

J

Fig. 7 - Forward Voltage Drop Characteristics

10

D = 0.50
D = 0.33
D = 0.25
D = 0.17

thJC

D = 0.08

1

0.1

Tran sie nt Ther m al Im peda nc e Z (K/W )

0.01

0.0001 0.001 0.01 0.1 1

Single Pulse

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

S teady State Val ue
(DC Op eration)

20ETS.. Series

Characteristics

thJC

1

CATHODE

ANODE

3

2

Outline Table

Document Number: 93503

www.vishay.com

5

20ETS..FP SAFE

Bulletin I2134 rev. C 03/99

IR

Series

.4

.4

6

5

1

1

R0.7 (2 PLACES)
R0.5

2.54
TYP.

5°± 0.5°

10.6

10.4

0.9

0.7

2.54 TY P .

5°± 0.5°

HOLE ø 3.4

.7

.2

3

3

.1
7

.6

.8

4

4

3.1

2.8

2.6

.7
6

.0

.8

6

5

1

1

0.48

0.44

2.85

2.65

10°

.3

.1

3

3

.7

.5

3

3

1

1

1.15

1.4

1.3

1.05

TYP

Dimensions in millimeters

Ordering Information Table

Device Code

20 E T S 16 FP

1 524

1- Current Rating2- Circuit Configuration:

3- Package:

4- Type of Silicon:

5- Voltage code: Code x 100 = V

E = Single Diode

T = TO-220AC

S = Standard Recovery Rectifier

6- TO-220 FULLPAK

3

6

08 = 800V

RRM

12 = 1200V
16 = 1600V

20ETS..FP SAFE

Document Number: 93503

www.vishay.com

6

Bulletin I2134 rev. C 03/99

IR

Series

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