C&H Technology 181RKIPbF User Manual
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TO-209AB (TO-93)
PRODUCT SUMMARY
I
T(AV)
180RKI...PbF /181RKI...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 180 A
FEATURES
• Hermetic glass-metal seal
• International standard case TO-209AB ( TO-93)
•RoHS complaint
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
180 A
• Controlled DC power supplies
• AC controllers
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 3800
60 Hz 4000
50 Hz 72
60 Hz 66
Typical 100 µs
180 A
80 °C
285
400 to 1000 V
- 40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
PART NUMBER
180/181RKI
V
VOLTAGE
CODE
40 400 500
100 1000 1100
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK VOLTAGE
V
I
DRM/IRRM
AT T
J
A
kA2s
MAXIMUM
= TJ MAXIMUM
mA
3080 800 900
Document Number: 94382 For technical questions, contact: ind-modules@vishay.com
Revision: 30-Apr-08 1
www.vishay.com
180RKI...PbF /181RKI...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 180 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
Maximum RMS on-state current I
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 720 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
T(AV)
RMS
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave
DC at 79 °C case temperature 285
t = 10 ms
t = 8.3 ms 4000
t = 10 ms
t = 8.3 ms 3660
t = 10 ms
t = 8.3 ms 66
t = 10 ms
t = 8.3 ms 56
(16.7 % x π x I
(I > π × I
(16.7 % x π x I
(I > π I
T(AV)
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
Sinusoidal half wave,
intial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 0.89
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.83
T(AV)
), TJ = TJ maximum 0.92
T(AV)
), TJ = TJ maximum 0.81
Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.35 V
TJ = 25 °C, anode supply 12 V resistive load
180 A
80 °C
3800
3500
72
61
600
1000
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
Gate current 1 A, dIg/dt = 1 A/µs
V
= 0.67 % V
d
DRM
ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/µs, VR = 100 V
dV/dt = 20 V/µs
≤ 1 µs
r
, TJ = 25 °C
DRM
300 A/µs
1.0
µs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of
rise of off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
RRM,
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum rated V
DRM/VRRM
DRM
500 V/µs
applied 30 mA
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94382
2 Revision: 30-Apr-08
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