C&H Technology 16RIA User Manual
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TO-208AA (TO-48)
Vishay High Power Products
Medium Power Thyristors
(Stud Version), 16 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V V
• RoHS compliant
• Designed and qualified for industrial and consumer level
TYPICAL APPLICATIONS
16RIA Series
RoHS
COMPLIANT
DRM/VRRM
PRODUCT SUMMARY
I
T(AV)
16 A
• Medium power switching
• Phase control applications
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 340
60 Hz 360
50 Hz 574
60 Hz 524
Typical 110 µs
16 A
85 °C
35 A
A
A2s
100 to 1200 V
- 65 to 125 °C
Document Number: 93695 For technical questions, contact: ind-modules@vishay.com
Revision: 19-Sep-08 1
www.vishay.com
16RIA Series
Vishay High Power Products
Medium Power Thyristors
(Stud Version), 16 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
DRM/VRRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
(1)
10 100 150
20 200 300
40 400 500
16RIA
60 600 700
80 800 900
100 1000 1100
120 1200 1300
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
(2)
For voltage pulses with tp ≤ 5 ms
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage V
Maximum holding current I
Latching current I
I
T(AV)
T(RMS)
180° sinusoidal conduction
35 A
t = 10 ms
I
TSM
t = 8.3 ms 360
t = 10 ms
t = 8.3 ms 300
t = 10 ms
t = 8.3 ms 524
t = 10 ms
t = 8.3 ms 375
t = 0.1 to 10 ms, no voltage reapplied,
= TJ maximum
T
J
T(TO)1
T(TO)2
r
t1
r
t2
TM
H
L
(16.7 % x π x I
T
= TJ maximum
J
(I > π x I
T(AV)
(16.7 % x π x I
T
= TJ maximum
J
(I > π x I
T(AV)
Ipk = 50 A, TJ = 25 °C 1.75 V
TJ = 25 °C, anode supply 6 V, resistive load
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK VOLTAGE
(2)
AT T
V
16 A
85 °C
No voltage
340
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
Sinusoidal
half wave,
initial T
=
J
maximum
T
J
285
574
405
reapplied
5740 A
T(AV)
< I < π x I
T(AV)
),
0.97
), TJ = TJ maximum 1.24
T(AV)
< I < π x I
T(AV)
),
17.9
), TJ = TJ maximum 13.6
130
200
I
DRM/IRRM
= TJ MAXIMUM
J
mA
MAXIMUM
20
10
A
A
2
V
mΩ
mA
2
s
√s
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 93695
2 Revision: 19-Sep-08
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