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Vishay High Power Products
Ultrafast Soft Recovery Diode,
150 A FRED Pt
Cathode Anode
FEATURES
• Ultrafast recovery
• 175 °C operating junction temperature
• Screw mounting only
• Lead (Pb)-free plating
• Designed and qualified for industrial level
• Compliant to RoHS directive 2002/95/EC
TM
150EBU02
PowerTab
TM
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
45 ns
150 A
200 V
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Operating junction and storage
temperatures
T
J
R
F(AV)
FSM
FRM
, T
TC = 116 °C 150
TC = 25 °C 1600
Square wave, 20 kHz 380
Stg
200 V
ASingle pulse forward current I
- 55 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 93002 For technical questions, contact: diodestech@vishay.com
Revision: 07-Jul-09 1
,
V
BR
V
R
F
R
T
S
IR = 100 µA 200 - -
IF = 150 A - 0.99 1.13
I
= 150 A, TJ = 175 °C - 0.79 0.90
F
VR = VR rated - - 50 µA
T
= 150 °C, VR = VR rated - - 2 mA
J
VR = 200 V - 180 - pF
Measured lead to lead 5 mm from package body - 3.5 - nH
www.vishay.com
V
150EBU02
Vishay High Power Products
Ultrafast Soft Recovery Diode,
150 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - - 45
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 58 -
J
TJ = 25 °C - 4.5 -
T
= 125 °C - 9.0 -
J
TJ = 25 °C - 87 -
rr
T
= 125 °C - 300 -
J
= 150 A
I
F
= 160 V
V
R
dI
/dt = 200 A/µs
F
-34-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style PowerTab
R
- - 0.35
thJC
Mounting surface, flat, smooth and greased - 0.2 -
R
thCS
- - 5.02 g
-0.18- oz.
1.2
(10)
TM
-
150EBU02
2.4
(20)
(lbf · in)
nsT
A
nC
K/W
N · m
www.vishay.com For technical questions, contact: diodestech@vishay.com
2 Revision: 07-Jul-09
Document Number: 93002
150EBU02
1000
(A)
100
F
10
Instantaneous Forward Current - I
Ultrafast Soft Recovery Diode,
TM
T = 175˚C
J
T = 125˚C
J
T = 25˚C
J
150 A FRED Pt
Vishay High Power Products
1000
T = 175˚C
100
(µA)
R
10
1
0.1
Reverse Current - I
0.01
0.001
050100150200
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
(pF)
T
T = 25˚C
J
125˚C
25˚C
J
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
(°C/W)
thJC
Thermal Impedance Z
D = 0.50
D = 0.20
D = 0.10
D = 0.05
0.1
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
1000
Junction Capacitance - C
100
1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Characteristics
thJC
Document Number: 93002 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 07-Jul-09 3
150EBU02
Vishay High Power Products
180
160
140
120
100
Square wave (D = 0.50)
80% Rated Vr applied
80
Allowable Case Temperature (°C)
see note (1)
60
050100150200250
Average Forward Current - IF
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
DC
(AV)
Ultrafast Soft Recovery Diode,
150 A FRED Pt
(A)
TM
70
60
50
40
trr ( ns )
30
20
10
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
900
Vr = 160V
Tj = 125˚C
Tj = 25˚C
diF/dt (A/µs )
IF = 150A
IF = 75A
0001001
250
200
150
100
50
Average Power Loss ( Watts )
0
050100150200250
Average Forward Current - IF
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
RMS Limit
) x R
REV
x VFM at (I
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
(A)
(AV)
;
thJC
/D) (see fig. 6);
F(AV)
Vr = 160V
800
Tj = 125˚C
Tj = 25˚C
700
600
IF = 150A
IF = 75A
500
400
Qrr ( nC )
300
200
100
0
diF/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. dI
R
0001001
/dt
F
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 93002
4 Revision: 07-Jul-09
150EBU02
Ultrafast Soft Recovery Diode,
150 A FRED Pt
L = 70 µH
dIF/dt
adjust
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
(1)
/dt - rate of change of current
(1) dI
F
through zero crossing
- peak reverse recovery current
(2) I
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
dIF/dt
RRM
G
TM
Vishay High Power Products
V
= 200 V
R
0.01 Ω
D.U.T.
D
IRFP250
S
(3)
t
rr
t
a
(2)
I
RRM
t
b
(4)
Q
rr
0.5 I
RRM
dI
/dt
(rec)M
0.75 I
RRM
(4) Q
- area under curve defined by t
rr
and I
RRM
trr x I
(5) dI
current during t
=
Q
rr
/dt - peak rate of change of
(rec)M
portion of t
b
(5)
rr
RRM
2
rr
Document Number: 93002 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 07-Jul-09 5
150EBU02
Vishay High Power Products
Ultrafast Soft Recovery Diode,
150 A FRED Pt
TM
ORDERING INFORMATION TABLE
Device code
Dimensions www.vishay.com/doc?95240
Part marking information www.vishay.com/doc?95370
Application note www.vishay.com/doc?95179
150 E B U 02
51324
1 - Current rating (150 = 150 A)
2 - Single diode
3
- PowerTabTM (ultrafast/hyperfast only)
4 - Ultrafast recovery
5 - Voltage rating (02 = 200 V)
LINKS TO RELATED DOCUMENTS
www.vishay.com For technical questions, contact: diodestech@vishay.com
6 Revision: 07-Jul-09
Document Number: 93002
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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