C&H Technology 113MTKPbF User Manual

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MTK

PRODUCT SUMMARY

I

O

53-93-113MT..KPbF Series

Vishay High Power Products

Three Phase Controlled Bridge

(Power Modules), 55 A to 110 A

FEATURES

• Package fully compatible with the industry
standard INT-A-PAK power modules series

• High thermal conductivity package, electrically
insulated case

• Excellent power volume ratio

55 A to 110 A

• 4000 V

• UL E78996 approved

• Totally lead (Pb)-free

• Designed and qualified for industrial level

DESCRIPTION

A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose and
heavy duty applications.

isolating voltage

RMS

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

53MT.K

SYMBOL CHARACTERISTICS

I

O

I

FSM

2

t

I

2

√t 7700 45 250 63 800 A2√s

I

V

RRM

T

Stg

T

J

T

C

50 Hz 390 950 1130

60 Hz 410 1000 1180

50 Hz 770 4525 6380

60 Hz 700 4130 5830

Range 800 to 1600 V

Range - 40 to 125 °C

52MT.K
51MT.K

55 90 110 A

85 85 85 °C

93MT.K
92MT.K
91MT.K

113MT.K
112MT.K
111MT.K

UNITS

A

A2s

Document Number: 94353 For technical questions, contact: [e-mail]
Revision: 29-Apr-08 1

www.vishay.com

53-93-113MT..KPbF Series

Vishay High Power Products

Three Phase Controlled Bridge

(Power Modules), 55 A to 110 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RRM

TYPE NUMBER

VOLTAGE

CODE

REPETITIVE PEAK

REVERSE VOLTAGE

V

80 800 900 800

100 1000 1100 1000

53/52/51MT..K

120 1200 1300 1200

140 1400 1500 1400

160 1600 1700 1600

80 800 900 800

100 1000 1100 1000

93/92/91MT..K
113/112/111MT..K

120 1200 1300 1200

140 1400 1500 1400

160 1600 1700 1600

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum DC output current
at case temperature

I

Maximum peak, one-cycle
forward, non-repetitive

I

TSM

on state surge current

2

Maximum I

Maximum I

Low level value of
threshold voltage

High level value of
threshold voltage

Low level value on-state
slope resistance

High level value on-state
slope resistance

Maximum on-state
voltage drop

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 7700 45 250 63 800 A2√s

V

T(TO)1

V

T(TO)2

r

r

V

Maximum non-repetitve
rate of rise of turned on

dI/dt

current

Maximum holding current I

Maximum latching current I

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2 Revision: 29-Apr-08

120° rect. conduction angle

O

t = 10 ms

t = 8.3 ms 410 1000 1180

t = 10 ms

t = 8.3 ms 345 840 1000

t = 10 ms

t = 8.3 ms 700 4130 5830

t = 10 ms

t = 8.3 ms 500 2920 4120

(16.7 % x π x I

(I > π x I

(16.7 % x π x I

t1

(I > π x I

t2

Ipk = 150 A, TJ = 25 °C, tp = 400 µs single junction 2.68 1.65 1.57 V

TM

T

= 25 °C, from 0.67 V

J

I

= 500 mA, tr < 0.5 µs, tp > 6 µs

g

TJ = 25 °C, anode supply = 6 V,

H

resistive load, grate open circuit

TJ = 25 °C, anode supply = 6 V, resistive load 400

L

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

T(AV)

), TJ maximum 1.45 1.27 1.27

T(AV)

T(AV)

), TJ maximum 11.04 3.59 3.37

T(AV)

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

RRM

Initial T

= TJ maximum

J

RRM

< I < π x I

< I < π x I

DRM

), TJ maximum 1.17 1.09 1.04

T(AV)

), TJ maximum 12.40 4.10 3.93

T(AV)

, ITM = π x I

T(AV)

V

, MAXIMUM REPETITIVE

DRM

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

V

53MT.K
52MT.K
51MT.K

55 90 110 A

85 85 85 °C

390 950 1130

330 800 950

770 4525 6380

540 3200 4510

,

I

RRM/IDRM

MAXIMUM

AT T

= 125 °C

J

mA

10

20

93MT.K
92MT.K
91MT.K

113MT.K
112MT.K
111MT.K

150 A/µs

200

Document Number: 94353

,

UNITS

A

A2s

V

mΩ

mA

53-93-113MT..KPbF Series

Three Phase Controlled Bridge

(Power Modules), 55 A to 110 A

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS

RMS isolation voltage V

Maximum critical rate of rise
of off-state voltage

ISOL

dV/dt

Note

(1)

Available with dV/dt = 1000 V/µs, to complete code add S90 i. e. 113MT160KBS90

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak gate current I

Maximum peak negative
gate voltage

Maximum required DC gate
voltage to trigger

Maximum required DC gate
current to trigger

Maximum gate voltage
that will not trigger

Maximum gate current
that will not trigger

TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s 4000 V

TJ = TJ maximum, linear to 0.67 V

(1)

gate open circuit

GM

G(AV)

GM

- V

TJ = TJ maximum

GT

TJ = - 40 °C

T

V

GT

I

GT

V

GD

I

GD

= 25 °C 2.5

J

= 125 °C 1.7

T

J

TJ = - 40 °C 270

= 25 °C 150

J

T

= 125 °C 80

J

TJ = TJ maximum, rated V

Anode supply = 6 V,
resistive load

DRM

,

DRM

applied

Vishay High Power Products

53MT.K
52MT.K
51MT.K

53MT.K
52MT.K
51MT.K

93MT.K
92MT.K
91MT.K

500 V/µs

93MT.K
92MT.K
91MT.K

0.25 V

113MT.K
112MT.K

UNITS

111MT.K

113MT.K
112MT.K

UNITS

111MT.K

10

2.5

W

2.5 A

10

4.0

V

mAT

6mA

THERMAL AND MECHANICAL SPECIFICATIONS

93MT.K
92MT.K
91MT.K

- 40 to 125 °C

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating
and storage temperature range

T

, T

J

Stg

53MT.K
52MT.K
51MT.K

DC operation per module 0.18 0.14 0.12

Maximum thermal resistance,
junction to case

R

thJC

DC operation per junction 1.07 0.86 0.70

120 °C rect. conduction angle per module 0.19 0.15 0.12

120 °C rect. conduction angle per junction 1.17 0.91 0.74

Maximum thermal resistance,
case to heatsink per module

Mounting
torque ± 10 %

to heatsink

to terminal 3 to 4

R

thCS

Approximate weight 225 g

Mounting surface smooth, flat and grased 0.03

A mounting compound is recommended and

4 to 6
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.

Document Number: 94353 For technical questions, contact: [e-mail]
Revision: 29-Apr-08 3

113MT.K
112MT.K
111MT.K

UNITS

K/W

Nm

www.vishay.com

53-93-113MT..KPbF Series

Vishay High Power Products

Three Phase Controlled Bridge

(Power Modules), 55 A to 110 A

ΔR CONDUCTION PER JUNCTION

SINUSOIDAL CONDUCTION

MAXIMUM

AT T

DEVICES

J

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

53/52/51MT.K 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236

113/112/111MT.K 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082

Note

• Table shows the increment of thermal resistance R

130

120

110

53MT..K Series

120°

(Rect)

when devices operate at different conduction angles than DC

thJC

RECTANGULAR CONDUCTION

AT TJ MAXIMUM

1000

TJ = 25 °C

100

TJ = 125 °C

UNITS

K/W93/92/91MT.K 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100

100

Maximum Allowable

Case Temperature (°C)

~

90

80

10 20 304050

0

Total Output Current (A)

Fig. 1 - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics

220

53MT..K Series

200

T

= 125 °C

180

160

140

120

100

Maximum Total Power Loss (W)

J

80

60

40

20

0

51510 25 353020 40 5045

0

Total Output Current (A)

+

-

120°

(Rect)

10

Instantaneous On-State Current (A)

1

220

200

180

160

140

120

100

0

80

60

40

20

0

0

60

Maximum Total Power Loss (W)

55

Fig. 3 - Total Power Loss Characteristics

53MT..K Series

Per junction

21 3 456

Instantaneous On-State Voltage (V)

R

0.3 K/W

0.4 K/W

0.5 K/W

0.7 K/W

1.0 K/W

1.5 K/W

25 50 75 100

0.12 K/W

0.2 K/W

thSA

= 0.05 K/W - ΔR

Maximum Allowable Ambient

Temperature (°C)

7

125

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94353

4 Revision: 29-Apr-08

53-93-113MT..KPbF Series

(Power Modules), 55 A to 110 A

350

300

250

200

On-State Current (A)

Peak Half Sine Wave

53MT..K Series

150

1

Fig. 4 - Maximum Non-Repetitive Surge Current

400

350

300

At any rated load condition and with
rated V

Per junction

applied following surge.

RRM

Initial T

at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Number of Equal Amplitude

Half Cycle Current Pulses (N)

Maximum non-repetitive surge current

versus pulse train duration. Control

of conduction may not be maintained.

Initial TJ = 125 °C
No voltage reapplied
Rated V

Three Phase Controlled Bridge

130

= 125 °C

J

RRM

10

reapplied

100

120

110

100

Maximum Allowable

90

Case Temperature (°C)

80

1000

100

Vishay High Power Products

93MT..K Series

120°

(Rect)

~

20 40 60 80 1000

Total Output Current (A)

Fig. 6 - Current Ratings Characteristic

+

-

250

On-State Current (A)

Peak Half Sine Wave

200

53MT..K Series

Per junction

150

0.1 10.01

Pulse Train Duration (s)

Fig. 5 - Maximum Non-Repetitive Surge Current

300

93MT..K Series

T

250

200

150

100

50

= 125 °C

J

120°

(Rect)

Maximum Total Power Loss (W)

0

10 20 304050 7060

0

Total Output Current (A)

10

Instantaneous On-State Current (A)

300

250

200

150

100

50

Maximum Total Power Loss (W)

9080

Fig. 8 - Total Power Loss Characteristics

TJ = 25 °C

TJ = 125 °C

93MT..K Series

Per junction

1

1.0 2.01.50.5 2.5 3.0 3.5

Total Output Current

Fig. 7 - Forward Voltage Drop Characteristics

0.12 K/W

0.2 K/W

0.3 K/W

0.4 K/W

0.5 K/W

0.7 K/W

1.0 K/W

1.5 K/W

0

25 50 75 100

0

R

thSA

= 0.05 K/W - ΔR

Maximum Allowable Ambient

Temperature (°C)

4.0

125

Document Number: 94353 For technical questions, contact: [e-mail]

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Revision: 29-Apr-08 5

53-93-113MT..KPbF Series

Vishay High Power Products

850

800

750

700

650

600

550

On-State Current (A)

Peak Half Sine Wave

500

93MT..K Series

450

Per junction

400

1

Fig. 9 - Maximum Non-Repetitive Surge Current

1000

900

800

700

600

500

On-State Current (A)

Peak Half Sine Wave

400

93MT..K Series

300

0.01

Fig. 10 - Maximum Non-Repetitive Surge Current

At any rated load condition and with
rated V

applied following surge.

RRM

Initial TJ = 125 °C

at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10

Number of Equal Amplitude

Half Cycle Current Pulses (N)

Maximum non-repetitive surge current

versus pulse train duration. Control

of conduction may not be maintained.

Per junction

Initial TJ = 125 °C
No voltage reapplied
Rated V

0.1

Pulse Train Duration (s)

Three Phase Controlled Bridge

(Power Modules), 55 A to 110 A

130

120

110

100

Maximum Allowable

90

Case Temperature (°C)

80

0

1000

100

10

Instantaneous On-State Current (A)

1

Fig. 12 - Forward Voltage Drop Characteristics

RRM

100

reapplied

1

113MT..K Series

120°

(Rect)

+

~

-

20 40 60 80 100

Total Output Current (A)

Fig. 11 - Current Ratings Characteristic

TJ = 25 °C

TJ = 125 °C

113MT..K Series

Per junction

1.0 1.50.5 2.0 2.5 3.0 3.5

Instantaneous On-State Voltage (V)

120

4.0

350

300

250

200

150

100

Temperature (°C)

50

Maximum Allowable Ambient

0

0.3 K/W

0.4 K/W

0.5 K/W

0.7 K/W

1.0 K/W

0

25 50 75 100

0.12 K/W

0.2 K/W

1.5 K/W

Maximum Total Power Loss (W)

R

thSA

= 0.058 K/W - ΔR

125

Maximum Total Power Loss (W)

350

300

250

200

150

100

50

0

0

113MT..K Series

T

= 125 °C

J

120°

(Rect)

2010 40306050 8070 10090

Total Output Current

110

Fig. 13 - Total Power Loss Characteristics

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Document Number: 94353

6 Revision: 29-Apr-08

53-93-113MT..KPbF Series

Three Phase Controlled Bridge

Vishay High Power Products

(Power Modules), 55 A to 110 A

1000

900

800

700

600

On-State Current (A)

Peak Half Sine Wave

500

113MT..K Series

400

Per junction

At any rated load condition and with
rated V

applied following surge.

RRM

Initial TJ = 125 °C

at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10 1001

Number of Equal Amplitude

Half Cycle Current Pulses (N)

Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current

10

Steady state value

= 1.07 K/W

R

1

0.1

thJC

R

= 0.86 K/W

thJC

= 0.70 K/W

R

thJC

(DC operation)

93MT..K Series

1200

1100

1000

900

800

700

600

On-State Current (A)

Peak Half Sine Wave

500

400

Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.

Initial TJ = 125 °C
No voltage reapplied
Rated V

113MT..K Series

Per junction

0.01 0.1 1.0

Pulse Train Duration (s)

53MT..K Series

113MT..K Series

reapplied

RRM

- Transient Thermal

Impedance (K/W)

0.01

thJC

Z

0.001

0.001 0.01 0.1 1

Per junction

Square Wave Pulse Duration (s)

Fig. 16 - Thermal Impedance Z

10

Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω
tr = 0.5 µs, tp >= 6 µs
b) Recommended load line for

1

<= 30% rated dI/dt: 20 V, 65 Ω
tr = 1 µs, tp >= 6 µs

0.1

VGD

Instantaneous Gate Voltage (V)

0.01

0.001 0.01 0.1 1

IGD

(b)

T

T

J

= 25 °C

J

= 125 °C

(a)

T

J

= -40 °C

Characteristics

thJC

(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms

Frequency Limited by PG(AV)53/ 93/ 113MT..K Series

Instantaneous Gate Current (A)

Fig. 17 - Gate Characteristics

(4)

(3)

(2)

10

(1)

1000 100 10

Document Number: 94353 For technical questions, contact: [e-mail]

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Revision: 29-Apr-08 7

53-93-113MT..KPbF Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

11 3 MT 160 K S90 PbF

1 - Current rating code: 5 = 55 A (average)

2 - Circuit configuration code: 3 = Full-controlled bridge

3 - Essential part number
4 - Voltage code x 10 = V

5 - Critical dV/dt:

6 -

Three Phase Controlled Bridge

(Power Modules), 55 A to 110 A

4

9 = 90 A (average)

11 = 110 A (average)

None = 500 V/µs (standard value)

S90 = 1000 V/µs (special selection)

PbF = Lead (Pb)-free

5132 6

2 = Postive half-controlled bridge

1 = Negative half-controlled bridge

(see Voltage Ratings table)

RRM

Note

• To order the optional hardware go to www.vishay.com/doc?95172

CIRCUIT CONFIGURATION

A

1

D

Dimensions http://www.vishay.com/doc?95004

B

64 3

25

EF

full-controlled bridge

(53, 93, 113MT..K)

AB C

C

125

D

positive half-controlled bridge

LINKS TO RELATED DOCUMENTS

EF

(52, 92, 112MT..K)

A

DE F

negative half-controlled bridge

BC

(51, 91, 111MT..K)

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8 Revision: 29-Apr-08

Document Number: 94353