C&H Technology 113MTKPbF User Manual
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MTK
PRODUCT SUMMARY
I
O
53-93-113MT..KPbF Series
Vishay High Power Products
Three Phase Controlled Bridge
(Power Modules), 55 A to 110 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio
55 A to 110 A
• 4000 V
• UL E78996 approved
• Totally lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose and
heavy duty applications.
isolating voltage
RMS
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
53MT.K
SYMBOL CHARACTERISTICS
I
O
I
FSM
2
t
I
2
√t 7700 45 250 63 800 A2√s
I
V
RRM
T
Stg
T
J
T
C
50 Hz 390 950 1130
60 Hz 410 1000 1180
50 Hz 770 4525 6380
60 Hz 700 4130 5830
Range 800 to 1600 V
Range - 40 to 125 °C
52MT.K
51MT.K
55 90 110 A
85 85 85 °C
93MT.K
92MT.K
91MT.K
113MT.K
112MT.K
111MT.K
UNITS
A
A2s
Document Number: 94353 For technical questions, contact: ind-modules@vishay.com
Revision: 29-Apr-08 1
www.vishay.com
53-93-113MT..KPbF Series
Vishay High Power Products
Three Phase Controlled Bridge
(Power Modules), 55 A to 110 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
RRM
TYPE NUMBER
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
80 800 900 800
100 1000 1100 1000
53/52/51MT..K
120 1200 1300 1200
140 1400 1500 1400
160 1600 1700 1600
80 800 900 800
100 1000 1100 1000
93/92/91MT..K
113/112/111MT..K
120 1200 1300 1200
140 1400 1500 1400
160 1600 1700 1600
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
Maximum DC output current
at case temperature
I
Maximum peak, one-cycle
forward, non-repetitive
I
TSM
on state surge current
2
Maximum I
Maximum I
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state
voltage drop
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 7700 45 250 63 800 A2√s
V
T(TO)1
V
T(TO)2
r
r
V
Maximum non-repetitve
rate of rise of turned on
dI/dt
current
Maximum holding current I
Maximum latching current I
www.vishay.com For technical questions, contact: ind-modules@vishay.com
2 Revision: 29-Apr-08
120° rect. conduction angle
O
t = 10 ms
t = 8.3 ms 410 1000 1180
t = 10 ms
t = 8.3 ms 345 840 1000
t = 10 ms
t = 8.3 ms 700 4130 5830
t = 10 ms
t = 8.3 ms 500 2920 4120
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
t1
(I > π x I
t2
Ipk = 150 A, TJ = 25 °C, tp = 400 µs single junction 2.68 1.65 1.57 V
TM
T
= 25 °C, from 0.67 V
J
I
= 500 mA, tr < 0.5 µs, tp > 6 µs
g
TJ = 25 °C, anode supply = 6 V,
H
resistive load, grate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load 400
L
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
), TJ maximum 1.45 1.27 1.27
T(AV)
T(AV)
), TJ maximum 11.04 3.59 3.37
T(AV)
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
RRM
Initial T
= TJ maximum
J
RRM
< I < π x I
< I < π x I
DRM
), TJ maximum 1.17 1.09 1.04
T(AV)
), TJ maximum 12.40 4.10 3.93
T(AV)
, ITM = π x I
T(AV)
V
, MAXIMUM REPETITIVE
DRM
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
53MT.K
52MT.K
51MT.K
55 90 110 A
85 85 85 °C
390 950 1130
330 800 950
770 4525 6380
540 3200 4510
,
I
RRM/IDRM
MAXIMUM
AT T
= 125 °C
J
mA
10
20
93MT.K
92MT.K
91MT.K
113MT.K
112MT.K
111MT.K
150 A/µs
200
Document Number: 94353
,
UNITS
A
A2s
V
mΩ
mA
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