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New Generation 3 D-61 Package, 110 A
®
Base
common
cathode
12
Anode
PRODUCT SUMMARY
I
F(AV)
V
R
Common
1
cathode
D-61-8
3
Anode
2
Schottky Rectifier
FEATURES
• 175 °C TJ operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• New fully transfer-mold low profile, small footprint, high
current package
• Through-hole versions are currently available for use in
lead (Pb)-free applications (“PbF” suffix)
• Designed and qualified for industrial level and
lead (Pb)-free
DESCRIPTION
The center tap Schottky rectifier module series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
110 A
100 V
to 175 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
113CNQ100APbF
Vishay High Power Products
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 110 A
100 V
tp = 5 µs sine 7000 A
55 Apk, TJ = 125 °C (per leg) 0.67 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 113CNQ100APbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
per leg
per device 110
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 150 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 720
TJ = 25 °C, IAS = 1 A, L = 30 mH 15 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
applied
V
RRM
55
A
7000
A
1A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94125 For technical questions, contact: diodes-tech@vishay.com
Revision: 25-Jun-07 1
www.vishay.com
113CNQ100APbF
Vishay High Power Products
Schottky Rectifier
New Generation 3 D-61 Package, 110 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
55 A
Maximum forward voltage drop per leg
See fig. 1
V
FM
110 A 1.00
(1)
55 A
110 A 0.79
Maximum reverse leakage
current per leg
I
RM
See fig. 2
Maximum junction capacitance per leg C
Typical series inductance per leg L
T
S
TJ = 25 °C
(1)
= 125 °C 32
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1960 pF
Measured lead to lead 5 mm from package body 5.5 nH
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink (D-61-8 only)
Approximate weight
Mounting torque
(D-61-8 only)
minimum
maximum 24 (20)
T
, T
J
Stg
DC operation
R
thJC
See fig. 4
DC operation 0.25
R
thCS
Mounting surface, smooth and greased
Device flatness < 5 mils
Recommended hardware 3M stainless screw
0.81
0.66
1.0
10 000 V/µs
- 55 to 175 °C
0.5
0.30
7.8 g
0.28 oz.
12 (10)
kgf · cm
(lbf · in)
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94125
2 Revision: 25-Jun-07
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