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110RKI...PbF, 111RKI...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 110 A
FEATURES
• High current and high surge ratings
• Hermetic ceramic housing
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
TO-209AC (TO-94)
PRODUCT SUMMARY
I
T(AV)
110 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 2080
60 Hz 2180
50 Hz 21.7
60 Hz 19.8
Typical 110 μs
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
110 A
90 °C
172
A
kA2s
400 to 1200 V
- 40 to 140 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
110RKI
111RKI
Document Number: 94379 For technical questions, contact: indmodules@vishay.com
Revision: 04-Nov-09 1
VOLTAGE
CODE
40 400 500
120 1200 1300
DRM/VRRM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
, MAXIMUM
V
V
, MAXIMUM
RSM
NON-REPETITIVE
PEAK VOLTAGE
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
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MAXIMUM
mA
2080 800 900
110RKI...PbF, 111RKI...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 110 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 217 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
I
T(AV)
180° conduction, half sine wave
DC at 83 °C case temperature 172
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
t = 10 ms
t = 8.3 ms 2180
t = 10 ms
t = 8.3 ms 1830
t = 10 ms
t = 8.3 ms 19.8
t = 10 ms
t = 8.3 ms 14.0
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.57 V
TJ = 25 °C, anode supply 6 V resistive load
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 1.02
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 1.70
T(AV)
), TJ = TJ maximum 0.82
T(AV)
), TJ = TJ maximum 2.16
T(AV)
110 A
90 °C
2080
1750
21.7
15.3
200
400
kA
mΩ
mA
A
2
s
V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
DRM
ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs
= 50 V, dV/dt = 20 V/μs, gate 0 V 25 Ω
V
R
≤ 1 μs
r
, TJ = 25 °C
DRM
300 A/μs
1
μs
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
,
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum rated V
DRM/VRRM
DRM
500 V/μs
applied 20 mA
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94379
2 Revision: 04-Nov-09
110RKI...PbF, 111RKI...PbF Series
Phase Control Thyristors
Vishay High Power Products
(Stud Version), 110 A
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
GM
G(AV)
GM
GM
GM
TJ = TJ maximum, tp ≤ 5 ms 12
TJ = TJ maximum, f = 50 Hz, d% = 50 3.0
TJ = TJ maximum, tp ≤ 5 ms
TJ = - 40 °C
DC gate current required to trigger I
DC gate voltage required to trigger V
GT
GT
= 25 °C 80 120
J
T
= 140 °C 40 -
J
TJ = - 40 °C 2.5 -
= 25 °C 1.6 2
J
T
= 140 °C 1 -
J
Maximum required gate
trigger/current/voltage are
the lowest value which will
trigger all units 12 V anode
to cathode applied
Maximum gate current/
DC gate current not to trigger I
DC gate voltage not to trigger V
GD
TJ = TJ maximum
GD
voltage not to trigger is the
maximum value which will
not trigger any unit with
rated V
anode to
DRM
cathode applied
VALUES
TYP. MAX.
3.0 A
20
10
180 -
6.0 mA
0.25 V
UNITS
W
V
mAT
VT
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
temperature range
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
T
J
Stg
R
thJC
R
thCS
DC operation 0.27
Mounting surface, smooth, flat and greased 0.1
Non-lubricated threads
Mounting torque, ± 10 %
Lubricated threads
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)
ΔR
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.043 0.031
120° 0.052 0.053
90° 0.066 0.071
60° 0.096 0.101
30° 0.167 0.169
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
Document Number: 94379 For technical questions, contact: indmodules@vishay.com
Revision: 04-Nov-09 3
- 40 to 140
- 40 to 150
K/W
15.5
(137)
14
N · m
(lbf · in)
(120)
T
= TJ maximum K/W
J
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°C
110RKI...PbF, 111RKI...PbF Series
Vishay High Power Products
140
130
120
110
100
Temperature (°C)
90
Maximum Allowable Case
80
0
94379_01
160
140
120
100
80
60
Power Loss (W)
40
20
Maximum Average On-State
0
06020
94379_03a
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
R
(DC) = 0.27 K/W
thJC
Conduction angle
120°
90°
8040 6020 100
30°
60°
Average On-State Current (A)
180°
120°
90°
60°
30°
Conduction angle
TJ = 140 °C
40 80 100 120
Average On-State Current (A)
Phase Control Thyristors
(Stud Version), 110 A
140
130
Ø
180°
120
RMS limit
Ø
Fig. 3 - On-State Power Loss Characteristics
120
110
100
90
Temperature (°C)
80
Maximum Allowable Case
70
94379_02
160
140
120
100
80
60
Power Loss (W)
40
20
Maximum Average On-State
0
0
94379_03b
R
(DC) = 0.27 K/W
thJC
Ø
Conduction period
30°
20 40 10060 14012080 160 1800
60°
90°
120°
180°
Average On-State Current (A)
R
0.6 K/W
0.8 K/W
1 K/W
1.5 K/W
2 K/W
4 K/W
5 K/W
20 6040 80 100 120 140
thSA
= 0.3 K/W - ΔR
Maximum Allowable
Ambient Temperature (°C)
DC
220
200
180
160
140
120
100
80
Power Loss (W)
60
40
Maximum Average On-State
20
0
0
94379_04a
DC
180°
120°
90°
60°
30°
Conduction period
TJ = 140 °C
20
40
60 140 180
100 160
80 120
Average On-State Current (A)
RMS limit
Ø
220
200
180
160
140
120
100
80
Power Loss (W)
60
40
Maximum Average On-State
20
0
94379_04b
R
thSA
= 0.3 K/W - ΔR
0.6 K/W
0.8 K/W
1 K/W
1.5 K/W
2 K/W
4 K/W
5 K/W
0
20 40 8060 100 120 140
Maximum Allowable
Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94379
4 Revision: 04-Nov-09
110RKI...PbF, 111RKI...PbF Series
2000
1800
1600
1400
1200
On-State Current (A)
Peak Half Sine Wave
1000
800
94379_05
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Phase Control Thyristors
(Stud Version), 110 A
At any rated load condition and with
rated V
Number of Equal Amplitude Half
Cycle Current Pulses (N)
applied following surge.
RRM
10 1001
10 000
= 140 °C
Initial T
J
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1000
TJ = 25 °C
2500
2000
1500
1000
On-State Current (A)
Peak Half Sine Wave
500
94379_06
Vishay High Power Products
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
No voltage reapplied
Rated V
0.1 1010.01
Pulse Train Duration (s)
Initial T
RRM
= 140 °C
J
reapplied
1
Steady state value
= 0.27 K/W
R
thJC
(DC operation)
0.1
0.01
- Transient Thermal
Impedance (K/W)
thJC
Z
0.001
0.0001 0.001 0.01 0.1 1 10
94379_08
TJ = 140 °C
100
10
Instantaneous On-State Current (A)
1
012345
94379_07
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
Characteristic
thJC
Document Number: 94379 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 04-Nov-09 5
110RKI...PbF, 111RKI...PbF Series
Vishay High Power Products
100
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
≤ 0.5 μs, tp ≥ 6 μs
t
r
(b) Recommended load line for
10
≤ 30 % rated dI/dt: 15 V, 40 Ω,
≤ 1 μs, tp ≥ 6 μs
t
r
1
V
GD
Instantaneous Gate Voltage (V)
0.1
0.001
94379_09
ORDERING INFORMATION TABLE
I
GD
0.01 0.1 1 10 1000100
Device code
Phase Control Thyristors
(Stud Version), 110 A
(a)
(b)
T
J
= 40 °C
T
J
= 25 °C
T
J
= 140 °C
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
11 0 RKI 120 PbF
(1) PGM = 12 W, tp = 5 ms
= 30 W, tp = 2 ms
(2) P
GM
= 60 W, tp = 1 ms
(3) P
GM
= 200 W, tp = 300 μs
(4) P
GM
(1) (2) (3) (4)
Frequency limited by P
G(AV)
51324
1 -I
-
2
rated average output current (rounded/10)
T(AV)
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
- Thyristor
3
- Voltage code x 10 = V
4
-
5
None = Standard production
(see Voltage Ratings table)
RRM
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95003
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94379
6 Revision: 04-Nov-09
TO-209AC (TO-94) for 110RKI and 111RKI Series
DIMENSIONS in millimeters (inches)
Ceramic housing
16.5 (0.65) MAX.
Outline Dimensions
Vishay High Power Products
2.6 (0.10) MAX.
157 (6.18)
170 (6.69)
55 (2.16)
MIN.
24 (0.94)
MAX.
Ø 8.5 (0.33)
Red silicon rubber
Red cathode
Red shrink
10 (0.39) MAX.
21 (0.83)
MAX.
1/2"-20UNF-2A
29.5 (1.16) MAX.
Ø 4.3 (0.17)
C.S. 0.4 mm
(0.0006 s.i.)
White gate
White shrink
Ø 22.5 (0.88) MAX.
SW 27
(8.46 ± 0.39)
2
215 ± 10
Flexible lead
C.S. 16 mm
(0.025 s.i.)
Fast-on terminals
AMP. 280000-1
9.5 (0.37) MIN.
20 (0.79) MIN.
2
REF-250
Note
• For metric device: M12 x 1.75 contact factory
Document Number: 95363 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
Revision: 25-Sep-08 For technical questions concerning module products, contact: ind-modules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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