C&H Technology 111RKIPbF User Manual
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110RKI...PbF, 111RKI...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 110 A
FEATURES
• High current and high surge ratings
• Hermetic ceramic housing
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
TO-209AC (TO-94)
PRODUCT SUMMARY
I
T(AV)
110 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 2080
60 Hz 2180
50 Hz 21.7
60 Hz 19.8
Typical 110 μs
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
110 A
90 °C
172
A
kA2s
400 to 1200 V
- 40 to 140 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
110RKI
111RKI
Document Number: 94379 For technical questions, contact: indmodules@vishay.com
Revision: 04-Nov-09 1
VOLTAGE
CODE
40 400 500
120 1200 1300
DRM/VRRM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
, MAXIMUM
V
V
, MAXIMUM
RSM
NON-REPETITIVE
PEAK VOLTAGE
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
www.vishay.com
MAXIMUM
mA
2080 800 900
110RKI...PbF, 111RKI...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 110 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 217 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
I
T(AV)
180° conduction, half sine wave
DC at 83 °C case temperature 172
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
t = 10 ms
t = 8.3 ms 2180
t = 10 ms
t = 8.3 ms 1830
t = 10 ms
t = 8.3 ms 19.8
t = 10 ms
t = 8.3 ms 14.0
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.57 V
TJ = 25 °C, anode supply 6 V resistive load
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 1.02
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 1.70
T(AV)
), TJ = TJ maximum 0.82
T(AV)
), TJ = TJ maximum 2.16
T(AV)
110 A
90 °C
2080
1750
21.7
15.3
200
400
kA
mΩ
mA
A
2
s
V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
DRM
ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs
= 50 V, dV/dt = 20 V/μs, gate 0 V 25 Ω
V
R
≤ 1 μs
r
, TJ = 25 °C
DRM
300 A/μs
1
μs
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
,
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum rated V
DRM/VRRM
DRM
500 V/μs
applied 20 mA
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94379
2 Revision: 04-Nov-09
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