C&H Technology 10RIA User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
Bulletin I2405 rev. B 04/06
Document Number: 93689
www.vishay.com
1
10RIA SERIES
MEDIUM POWER THYRISTORS Stud Version
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1200V V
RoHS Compliant
DRM
/ V
RRM
10A
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Parameters 10RIA Unit
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
2
I
t@
@ 50Hz 225 A
@ 60Hz 240 A
50Hz 255 A2s
@ 60Hz 233 A
10 A
85 °C
25 A
2
s
V
DRM/VRRM
t
q
T
J
100 to 1200 V
typical 110 μs
- 65 to 125 °C
Case Style
TO-208AA (TO-48)
10RIA Series
Document Number: 93689
www.vishay.com
2
Bulletin I2405 rev. B 04/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage (1) repetitive peak voltage (2)
10 100 150 20
20 200 300
40 400 500
60 600 700
10RIA 80 800 900 10
100 1000 1100
120 1200 1300
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/μs
(2) For voltage pulses with t
≤ 5ms
p
On-state Conduction
Parameter 10RIA Units Conditions
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
@ TJ = TJ max.
VVmA
max.
I
Max. average on-state current 10 A 180° conduction, half sine wave
T(AV)
@ Case temperature 85 °C
I
I
Max. RMS on-state current 25 A
T(RMS)
Max. peak, one-cycle 225 t = 10ms No voltage
TSM
non-repetitive surge current 240 t = 8.3ms reapplied
190 t = 10ms 100% V
A
RRM
200 t = 8.3ms reapplied Sinusoidal half wave,
2
t Maximum I2t for fusing 255 t = 10ms No voltage Initial TJ = TJ max.
I
233 t = 8.3ms reapplied
180 t = 10ms 100% V
A2s
RRM
165 t = 8.3ms reapplied
2
√t Maximum I2√t for fusing 2550 A2√s t = 0.1 to 10ms, no voltage reapplied
I
V
Low level value of threshold 1.10 (16.7% x π x I
T(TO)1
T(AV)
< I < π x I
), TJ = TJ max.
T(AV)
voltage
V
High level value of threshold 1.39 (I > π x I
T(TO)
2
V
), TJ = TJ max.
T(AV)
voltage
r
r
Low level value of on-state 24.3 (16.7% x π x I
t1
slope resistance
High level value of on-state 16.7 (I > π x I
t2
mΩ
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
), TJ = TJ max.
T(AV)
slope resistance
V
I
I
L
Max. on-state voltage 1.75 V Ipk= 32A, TJ = 25°C tp = 10ms sine pulse
TM
Maximum holding current 130
H
Typical latching current 200
mA
= 25°C, anode supply 12V resistive load
T
J
Loading...