C&H Technology 10ETSPbF User Manual

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10ETS...PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 10 A

Base

cathode

2

FEATURES/DESCRIPTION

The 10ETS...PbF rectifier series has been
optimized for very low forward voltage drop,
with moderate leakage. The glass passivation
technology used has reliable operation up to
150 °C junction temperature.

Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches

TO-220AC

13

Cathode

Anode

and output rectifiers which are available in identical package

PRODUCT SUMMARY

VF at 10 A < 1 V

I

FSM

V

RRM

200 A

800 to 1200 V

outlines.

This product has been designed and qualified for industrial
level and lead (Pb)-free.

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

= 55 °C, TJ = 125 °C

A

12.0 16.0 A

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Sinusoidal waveform 10 A

800 to 1200 V

200 A

10 A, TJ = 25 °C 1.1 V

- 40 to 150 °C

Pb-free

Available

RoHS*

COMPLIANT

VOLTAGE RATINGS

, MAXIMUM

V

RRM

PART NUMBER

10ETS08PbF 800 900

10ETS12PbF 1200 1300

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

0.510ETS10PbF 1000 1100

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Maximum I

Maximum I

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94337 For technical questions, contact: [e-mail]
Revision: 19-Mar-08 1

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1450 A2√s

F(AV)

I

FSM

TC = 105 °C, 180° conduction half sine wave 10

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 200

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 145

applied 170

RRM

applied 130

RRM

A

2

A

s

www.vishay.com

10ETS...PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 10 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

F(TO)

RM

FM

10 A, TJ = 25 °C 1.1 V

t

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 0.50

J

V

= Rated V

R

RRM

20 mΩ

0.82 V

0.05

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage temperature range T

Minimum thermal resistance, junction to case R

Minimum thermal resistance, junction to ambient
(PCB mount)

Soldering temperature T

, T

J

Stg

DC operation 2.5

thJC

(1)

R

62

thJA

S

Approximate weight

Marking device Case style TO-220AC

Note

(1)

When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994

- 40 to 150 °C

240 °C

2g

0.07 oz.

10ETS08

10ETS10

10ETS12

mA

°C/W

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94337

2 Revision: 19-Mar-08

10ETS...PbF High Voltage Series

150

140

130

120

110

100

Maximum Allowable

Case Temperature (°C)

90

80

0

2

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

150

140

130

120

110

Maximum Allowable

Case Temperature (°C)

100

30°

90

0

4268

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

10ETS.. Series

R

(DC) = 2.5 °C/W

thJC

Conduction angle

60°

90°

30°

120°

468

10ETS.. Series
R

(DC) = 2.5 °C/W

thJC

Conduction period

120°

60°

90°

180°

10 12 14

Input Rectifier Diode, 10 A

Ø

180°

10

12

Ø

DC

16

18

Maximum Average

Forward Power Loss (W)

Forward Current (A)

Peak Half Sine Wave

Vishay High Power Products

20

18

16

14

12

10

200

180

160

140

120

100

80

60

40

DC
180°
120°

90°

60°

30°

8

6

4

2

0

02468

RMS limit

Ø

Conduction period

10ETS.. Series

= 150 °C

T

J

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

10ETS.. Series

1

At any rated load condition and with

rated V

applied following surge.

RRM

Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10

Number of Equal Amplitude

Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

16141210

100

16

14

12

10

Maximum Average

Forward Power Loss (W)

180°
120°

90°
60°
30°

8

6

4

2

0

0

2468

Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics

RMS limit

Ø

Conduction angle

10ETS.. Series

= 150 °C

T

J

10

240

220

200

180

160

140

120

100

Forward Current (A)

Peak Half Sine Wave

80

60

40

Maximum non-repetitive surge current

versus pulse train duration.

No voltage reapplied

Rated V

10ETS.. Series

0.1 1.00.01

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitve Surge Current

Initial T

RRM

= 150 °C

J

reapplied

Document Number: 94337 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 19-Mar-08 3

10ETS...PbF High Voltage Series

Vishay High Power Products

100

10

Instantaneous Forward Current (A)

1

10

Input Rectifier Diode, 10 A

TJ = 25 °C

TJ = 150 °C

10ETS.. Series

0.5 1.0 1.5 2.0 2.5

0

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

Steady state value
(DC operation)

3.0

1

- Transient

thJC

Z

Single pulse

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Thermal Impedance (°C/W)

0.1

0.0001 0.001 0.01 0.1 1

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

10ETS.. Series

10

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94337

4 Revision: 19-Mar-08

10ETS...PbF High Voltage Series

ORDERING INFORMATION TABLE

Device code

10 E T S 12 PbF

1 - Current rating (10 = 10 A)

2 - Circuit configuration:

3 - Package:

4 - Type of silicon:

5 - Voltage code x 100 = V

6 - None = Standard production

Input Rectifier Diode, 10 A

51324

E = Single diode

T = TO-220AC

S = Standard recovery rectifier

RRM

PbF = Lead (Pb)-free

Vishay High Power Products

6

08 = 800 V
10 = 1000 V
12 = 1200 V

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95221

Part marking information http://www.vishay.com/doc?95224

Document Number: 94337 For technical questions, contact: [e-mail]
Revision: 19-Mar-08 5

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Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1