C&H Technology 10ETS User Manual

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Bulletin I2120 rev. A 07/97
Document Number: 93484
www.vishay.com
1
INPUT RECTIFIER DIODE
Description/Features
The 10ETS.. rectifier SAFE optimized for very low forward voltage drop,
with moderate leakage. The glass passivation technology used has reliable operation up to 150°C junction temperature. The
High Reverse Voltage
allows design of input stage primary rectification with capability. Typical applications are in input rectification and these products are designed to be used with International Rectifier Switches and Output Rectifiers which are available in identical package outlines.
Output Current in Typical Applications
Outstanding Voltage Surge
IR
series has been
range available
SAFE
IR
VF< 1.1V @ 10A
= 200A
I
FSM
800 to 1600V
V
RRM
Series
10ETS..
Applications Single-phase Bridge Three-phase Bridge Units
Capacitive input filter T common heatsink of 1°C/ W
Major Ratings and Characteristics
Characteristics 10 E TS . . Units
I
Sinusoidal waveform 10 A
F(AV)
V
RRM
I
FSM
VF@ 10 A, TJ = 25°C 1. 1 V
T
J
= 55°C, TJ = 125°C
A
800 to 1600 V
200 A
- 40 to 150 ° C
12.0 16.0 A
Package Outline
TO-220AC
Also available in D-pak (8EWS Series)
10ETS.. SAFE
Document Number: 93484
www.vishay.com
2
IR
Series
Bulletin I2120 rev. A 07/97
Voltage Ratings
V
Part Number
, maximum V
RRM
peak reverse voltage peak reverse voltage 150°C
, maximum non repetitive I
RSM
VVmA
10ETS08 800 90 0 0.5 10ETS12 1200 1300 10ETS16 1600 1700
Provide terminal coating for voltages above 1200V
Absolute Maximum Ratings
Parameters 10ETS.. Units Conditions
I
Max. Average Forward Current 10 A @ TC = 105° C, 180° conduction half sine wave
F(AV)
Max. Peak One Cycle Non-Repetitive 170 10ms Sine pulse, rated V
I
FSM
Surge Current 200 10ms Sine pulse, no voltage reapplied
I2t Max. I2t for fusing 130 10ms Sine pulse, rated V
AA
2
s
145 10ms Sine pulse, no voltage reapplied
2
I
t Max. I2√t for fusing 1450 A2√s t = 0.1 to 10ms, no voltage reapplied
RRM
Electrical Specifications
applied
RRM
applied
RRM
Parameters 10ETS.. Units Conditions
VFMMax. Forward Voltage Drop 1.1 V @ 10A, TJ = 25°C rtForward slope resistance 20 m V
Threshold voltage 0.82 V
F(TO)
IRMMax. Reverse Leakage Current 0.05 TJ = 25 °C
mA
TJ = 150°C
VR = rated V
0.50 TJ = 150 °C
Thermal-Mechanical Specifications
Parameters 10ETS.. Units Conditions
TJMax. Junction Temperature Range - 40 to 150 ° C T
Max. Storage Temperature Range - 40 to 150 ° C
stg
R
Max. Thermal Resistance Junction 2. 5 °C/W DC operation
thJC
to Case
R
Max. Thermal Resistance Junction 62 °C/W
thJA
to Ambient
R
Typical Thermal Resistance, Case to 0.5 °C/W Mounting surface , smooth and greased
thCS
Heatsink wt Approximate Weight 2 (0.07) g (oz.) T Mounting Torque Min. 6 (5)
Max. 12 (10)
Case Style TO-220AC
Kg-cm (Ibf-in)
RRM
10ETS.. SAFE
Document Number: 93484
www.vishay.com
3
Bulletin I2120 rev. A 07/97
IR
Series
150
140
130
120
110
100
90
80
Maximum Allowable Case Temperature (°C)
024681012
10ETS.. Series R (DC) = 2.5 °C/W
thJC
Conducti on Angle
30°
60°
90°
120°
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
16
180°
120°
14
90° 60°
12
30°
10
8
6
4
2
0
Maximum Average Forward Po we r Loss (W)
RMS Limit
Cond uction Angle
10ETS.. Series T = 150°C
J
0246810
Average Forward Current (A)
180°
150
140
130
120
110
100
Maximum Allowable Case Temperature ( °C)
30°
90
0 2 4 6 8 10 12 14 16 18
Average Forw ard Current (A)
10ETS. . Ser i es R (DC) = 2.5 °C/W
thJC
Conduction Period
60°
90°
120°
180°
Fig. 2 - Current Rating Characteristics
20
DC
18
180°
120°
16
90°
14
60° 30°
12 10
RMS Limit
8 6 4 2 0
Maximum Average Forward Power Loss (W)
0246810121416
Average Forward Current (A)
Conduction P eriod
10ETS .. Ser ie s T = 150°C
J
Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics
DC
200
At An y R a ted Lo ad Con di ti on A n d W ith
Rated V Applied Following Surge.
180
160
140
120
100
80
10ETS.. Series
60
Peak Half Sine Wave Forward Current (A)
40
1 10 100
Number Of Equal Amplitude Half Cy cle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
RRM
Initial T = 150°C
J
@ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
240
Maximum Non Repetiti ve S urge Current
220 200 180 160 140 120 100
80
10ETS. . Ser i es
60
Peak Half Sine Wave Forward Current (A)
40
0.01 0.1 1
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Versus P ulse Tr ai n D ur ation.
Pulse Train Duration (s)
Ini tial T = 150 °C
No Voltage Reapplied
Rated V Reapplied
RRM
J
10ETS.. SAFE
Document Number: 93484
www.vishay.com
4
IR
Bulletin I2120 rev. A 07/97
Series
100
T = 25°C
J
T = 150°C
J
10
Instantaneo us Forward Current (A)
1
0 0.5 1 1.5 2 2.5 3
Instantane o us Forward Voltage ( V)
10ETS.. Ser ie s
Fig. 8 - Forward Voltage Drop Characteristics
10
D = 0.50 D = 0.33 D = 0.25
thJC
D = 0.17 D = 0.08
1
0.1
Transient Thermal Impedance Z (°C/W)
0.0001 0.001 0.01 0.1 1 10 Sq ua re Wav e P ulse Durat i o n (s )
Fig. 9 - Thermal Impedance Z
thJC
Stea dy State Val ue (DC Ope rati on)
10ETS. . SeriesSingle Pulse
Characteristics
Ordering Information Table
1
CATHODE
ANODE
3
2
BASE
CATHODE
Document Number: 93484
www.vishay.com
5
Device Code
10 E T S 16
1 5243
1- Current Rating2- Circuit Configuration:
3- Package:
4- Type of Silicon:
5- Voltage code: Code x 100 = V
E = Single Diode
T = TO-220AC
S = Standard Recovery Rectifier
Outline Table
RRM
08 = 800V 12 = 1200V 16 = 1600V
10ETS.. SAFE
Bulletin I2120 rev. A 07/97
IR
Series
15.24 (0.60)
14.84 (0.58)
14.09 (0.55)
13.47 (0.53)
4.57 (0.18)
4.32 (0.17)
1.40 (0.05)
1.15 (0.04)
10.54 (0.41) MAX.
1
1
TERM 2
3
0.94 (0.04)
0.69 (0.03)
3
5.08 (0.20) REF.
3.78 (0.15)
3.54 (0.14)
2.92 (0.11)
2.54 (0.10)
2.04 (0.080) MAX.
DIA.
3.96 (0.16)
3.55 (0.14)
0.61 (0.02) MAX.
Dimensions in millimeters and inches
1.32 (0.05)
1.22 (0.05)
6.48 (0.25)
6.23 (0.24)
0.10 (0.004)
2.89 (0.11)
2.84 (0.10)
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