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Bulletin I2120 rev. A 07/97
Document Number: 93484
www.vishay.com
1
INPUT RECTIFIER DIODE
Description/Features
The 10ETS.. rectifier SAFE
optimized for very low forward voltage drop,
with moderate leakage. The glass passivation
technology used has reliable operation up to
150°C junction temperature.
The
High Reverse Voltage
allows design of input stage primary
rectification with
capability.
Typical applications are in input rectification
and these products are designed to be used
with International Rectifier Switches and
Output Rectifiers which are available in
identical package outlines.
Output Current in Typical Applications
Outstanding Voltage Surge
IR
series has been
range available
SAFE
IR
VF< 1.1V @ 10A
= 200A
I
FSM
800 to 1600V
V
RRM
Series
10ETS..
ApplicationsSingle-phase Bridge Three-phase Bridge Units
Capacitive input filter T
common heatsink of 1°C/ W
Major Ratings and Characteristics
Characteristics10 E TS . .Units
I
Sinusoidal waveform10A
F(AV)
V
RRM
I
FSM
VF@ 10 A, TJ = 25°C1. 1V
T
J
= 55°C, TJ = 125°C
A
800 to 1600V
200A
- 40 to 150° C
12.016.0A
Package Outline
TO-220AC
Also available in D-pak (8EWS Series)
10ETS.. SAFE
Document Number: 93484
www.vishay.com
2
IR
Series
Bulletin I2120 rev. A 07/97
Voltage Ratings
V
Part Number
, maximumV
RRM
peak reverse voltagepeak reverse voltage150°C
, maximum non repetitiveI
RSM
VVmA
10ETS0880090 00.5
10ETS1212001300
10ETS1616001700
Provide terminal coating for voltages above 1200V
Absolute Maximum Ratings
Parameters10ETS.. UnitsConditions
I
Max. Average Forward Current10A@ TC = 105° C, 180° conduction half sine wave
F(AV)
Max. Peak One Cycle Non-Repetitive17010ms Sine pulse, rated V
I
FSM
Surge Current20010ms Sine pulse, no voltage reapplied
I2tMax. I2t for fusing13010ms Sine pulse, rated V
AA
2
s
14510ms Sine pulse, no voltage reapplied
2
I
√t Max. I2√t for fusing1450A2√st = 0.1 to 10ms, no voltage reapplied
RRM
Electrical Specifications
applied
RRM
applied
RRM
Parameters10ETS.. UnitsConditions
VFMMax. Forward Voltage Drop1.1V@ 10A, TJ = 25°C
rtForward slope resistance20mΩ
V