Cherry Semiconductor CS7054YN14 Datasheet

Features
200 mA Peak PWM Gate
Drive Output
Patented Voltage
Compensation Circuit
100% Duty Cycle
Capability
5V, ± 3% Linear Reg.
Low Current Sleep Mode
Overvoltage Protection
Over Current Protection
of External MOSFET / IGBT
Output Inhibit
Package Options
CS7054
Low Side PWM FET Controller
CS7054
Description
The CS7054 is a monolithic integrat­ed circuit designed primarily to control the rotor speed of perma­nent magnet, direct current (DC) brush motors. It drives the gate of an N channel power MOSFET or IGBT with a user-adjustable, fixed frequency, variable duty cycle, pulse width modulated (PWM) sig­nal. The CS7054 can also be used to control other loads such as incan­descent bulbs and solenoids. Inductive current from the motor or solenoid is recirculated through an external diode.
The CS7054 accepts a DC level input signal of 0 to 5V to control the pulse width of the output signal. This signal can be generated by a
potentiometer referenced to the on­chip 5V linear regulator, or a fil­tered 0% to 100% PWM signal also referenced to the 5V regulator.
The IC is placed in a sleep state by pulling the CTL lead below 0.5V. In this mode everything on the chip is shut down except for the on-chip regulator and the overall current draw is less than 275 µA. There are a number of on-chip diagnostics that look for potential failure modes and can disable the external power MOSFET.
Application Diagram
1
OUTPUT
2
3
4
5
6
7
Gnd
FLT
R
OSC
CTL
NC
14
13
12
11
10
V
CC
PGnd
INH
I
ADJ
V
REG
8
9
C
OSC
I
SENSE+
I
SENSE-
14 Lead PDIP
1
Consult factory for 16 lead SO wide package.
Cherry Semiconductor Corporation
2000 South County Trail, East Greenwich, RI 02818
Tel: (401)885-3600 Fax: (401)885-5786
Email: info@cherry-semi.com
Web Site: www.cherry-semi.com
A Company
¨
Rev. 4/21/99
V
42.5mH
BAT
C
C
10K
FLT
OSC
1000mF
R
OSC
105K
P1
390pF
100K
1000mF
Input
10K
R
1M
GATE
6
C
CS
.022mF
R
CS1
51
R
CS2
51
R
S
51
OUTPUT
Gnd
FLT
C
OSC
R
OSC
CTL
NC
V
PGnd
I
SENSE+
I
SENSE-
V
INH
I
ADJ
REG
10mF
CC
10K
10K
R
SENSE
4mW
MOT+
MOT-
10K
N1
10K
10mF
CS7054
2
Storage Temperature ................................................................................................................................................-65ûC to 150ûC
V
CC
................................................................................................................................................................................-0.3V to 30V
Supply Voltage Range (load dump = 26Vw/series 51½ resistor) VCCPeak Transient Voltage.....................................40V
Input Voltage Range (at any input) ...........................................................................................................................-0.3V to 10V
Maximum Junction Temperature ..........................................................................................................................................150ûC
ESD Capability (Human Body Model) ....................................................................................................................................2kV
Lead Temperature Soldering: Wave Solder (through hole styles only)..........................................10 sec. max, 260¡C peak
Absolute Maximum Ratings
Electrical Characteristics:
8V < VCC< 16V, -40ûC < TA< 125¡C, (unless otherwise specified)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
CC
Supply
Operating Current Supply 5 10 mA
Quiescent Current VCC= 12V 170 275 µA
Overvoltage Shutdown 18 19.5 21 V
Overvoltage Hysteresis 150 325 500 mV
Control (CTL)
Control Input Current CTL = 0V to 5V -2 0.1 2 µA
Sleep Mode Threshold 8% 10% 12% V
REG
Sleep Mode Hysteresis 50 100 150 mV
Current Sense
Differential Voltage Sense I
ADJ
=51.2% V
REG
and R
CS1
= 51½ 60.5 79.5 mV
I
ADJ
Input Current I
ADJ
= 0V to 5V -5 0.3 2 µA
Linear Regulator V
REG
Output Voltage VCC= 13.2V 4.85 5.00 5.15 V
Inhibit
Inhibit Threshold 40% 50% 60% V
REG
Inhibit Hysteresis 150 325 500 mV
External Drive (OUTPUT)
Output Frequency R
OSC
= 105k½, C
OSC
= 390pF 17 20 23 kHz
Voltage to Duty Cycle VCC= 13V, CTL = 30% V
REG
26.3 38.5 %
Conversion VCC= 13V, CTL = 70% V
REG
69.5 81.5 %
Output Rise Time VCC= 13V, R
GATE
= 6½, C
GATE
= 5nF .25 1 µs
Output Fall Time VCC= 13V, R
GATE
= 6½, C
GATE
= 5nF .30 1 µs
Output Sink Current VCC= 13V, R
GATE
= 6½, C
GATE
= 5nF 400 mA
Output Source Current VCC= 13V, R
GATE
= 6½, C
GATE
= 5nF 400 mA
Output High Voltage I
OUT
= 1mA V
CC
- 1.7 V
Output Low Voltage I
OUT
= -1mA 1.3 V
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