Cherry Semiconductor CS3845BGN8, CS3845BGDR8, CS3845BGDR14, CS3845BGD8, CS3845BGD14 Datasheet

1
Features
Optimized for Off-line Use
Temperature Compensated Oscillator
50% Maximum Duty-cycle Clamp
Low Start-up Current
(500µA max)
Pulse-by-pulse Current
Limiting
Undervoltage Active Pull
Down
Double Pulse Suppression
1% Trimmed Bandgap
Reference
High Current Totem Pole
Output
Package Options
CS3845B
Current Mode PWM
Control Circuit
with 50% Max Duty Cycle
CS3845B
Description
Block Diagram
Absolute Maximum Ratings
Supply Voltage (I
CC
<30mA) ..........................................................Self Limiting
Supply Voltage (Low Impedance Source)...................................................30V
Output Current ...............................................................................................±1A
Output Energy (Capacitive Load) .................................................................5µJ
Analog Inputs (VFB, V
SENSE
)...........................................................-0.3V to 5.5V
Error Amp Output Sink Current...............................................................10mA
Lead Temperature Soldering
Wave Solder (through hole styles only) ..........10 sec. max, 260°C peak
Reflow (SMD styles only)...........60 sec. max above 183°C, 230°C peak
1
COMP
2 3 4
V
FB
Sense
OSC
V
REF
V
CC
V
OUT
Gnd
8 7 6 5
8 Lead PDIP & SO
10
7
14
13
12
8
1
2
3
4
5
6
11
9
COMP
NC
V
FB
NC
Sense
NC
OSC
V
REF
NC V
CC
VCC Pwr V
OUT
Pwr Gnd
Gnd
14 Lead SO Narrow
The CS3845B provides all the neces­sary features to implement off-line fixed frequency current-mode control with a minimum number of external components.
The CS3845B incorporates a precision temperature-controlled oscillator to minimize variations in frequency. An internal toggle flip-flop, which blanks the output off every other clock cycle, ensures that the duty-cycle never
exceeds 50%. The undervoltage lock­out feature ensures that V
REF
is stabi­lized within specification before the output stage is enabled. The CS3845B
has been optimized for lower start up current (500µA max).
Other features include 1% trimmed band gap reference, pulse-by-pulse current limiting, and a high-current totem pole output for driving capaci­tive loads.
Rev. 11/19/98
Cherry Semiconductor Corporation
2000 South County Trail, East Greenwich, RI 02818
Tel: (401)885-3600 Fax: (401)885-5786
Email: info@cherry-semi.com
Web Site: www.cherry-semi.com
A Company
®
V
Undervoltage Lock-out
V
CC
CC
V
Pwr
CC
COMP
OSC
Gnd
V
34V
8.4V/7.6V
FB
Amplifier
2 R
Error
­+
Oscillator
R
2.50V
1V
Reset
R
Undervoltage
R
Current
Sensing
Comparator
Set/
V
REF
Lockout
Toggle
Flip-Flop
S
R PWM
Latch
5.0 Volt
Reference
NOR
Internal
Bias
V
REF
V
OUT
Pwr Gnd
2
Electrical Characteristics: 0≤TA≤70˚C, VCC=15V; RT=10k, CT=3.3nF for sawtooth mode, unless otherwise stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
CS3845B
Reference Section
Output Voltage T
J
=25˚C, I
REF
=1mA 4.90 5.00 5.10 V
Line Regulation 12≤V
CC
25V 6 20 mV
Load Regulation 1≤I
REF
20mA 6 25 mV Temperature Stability (Note 1) 0.2 0.4 mV/˚C Total Output Variation Line, Load, Temp. (Note 1) 4.82 5.18 V Output Noise Voltage 10Hz≤f≤10kHz, TJ=25˚C (Note 1) 50 µV Long Term Stability TA=125˚C, 1000 Hrs. (Note 1) 5 25 mV Output Short Circuit T
A
=25˚C -30 -100 -180 mA
Oscillator Section
Initial Accuracy Sawtooth Mode, TJ=25˚C 475257kHz Voltage Stability 12≤V
CC
25V 0.2 1.0 %
Temperature Stability Sawtooth Mode T
MIN≤TA≤TMAX
(Note 1) 5 %
Amplitude V
OSC
(peak to peak)(Note 1) 17 V
Discharge TJ=25°C; (Note 1) 7.5 8.3 9.3 mA
T
MIN≤TA≤TMAX
(Note 1) 7.2 9.5 mA
Error Amp Section
Input Voltage V
COMP
=2.5V 2.42 2.50 2.58 V Input Bias Current VFB=0V -0.3 -2.0 µA AVOL 2≤V
OUT
4V 65 90 dB Unity Gain Bandwidth (Note 1) 0.7 1.0 MHz PSRR 12≤VCC≤25V 60 70 dB Output Sink Current VFB=2.7V, V
COMP
=1.1V 2 6 mA
Output Source Current VFB=2.3V, V
COMP
=5V -0.5 -0.8 mA
V
OUT
HIGH VFB=2.3V, RL15kto Gnd 5 6 V
V
OUT
LOW VFB=2.7V, RL=15kto V
REF
0.7 1.1 V
Current Sense Section
Gain (Notes 2&3) 2.85 3.00 3.15 V/V Maximum Input Signal V
COMP
=5V (Note 2) 0.9 1.0 1.1 V
PSRR 12≤V
CC
25V (Note 2) 70 dB Input Bias Current V
Sense
=0V -2 -10 µA
Delay to Output TJ=25˚C (Note 1) 150 300 ns
Output Section
Output Low Level I
SINK
=20mA 0.1 0.4 V
I
SINK
=200mA 1.5 2.2 V
Output High Level I
SOURCE
=20mA 13.0 13.5 V
I
SOURCE
=200mA 12.0 13.5 V Rise Time TJ=25˚C, CL=1nF (Note 1) 50 150 ns Fall Time TJ=25˚C, CL=1nF (Note 1) 50 150 ns
Loading...
+ 4 hidden pages