CHENYI ELECTRONICS ZMM1, ZMM10, ZMM2.0, ZMM2.4, ZMM2.7 Datasheet
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CE ZMM1 THRU ZMM200
CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES
FEATURES
. In MiniMELF case especiaily for automated insertion
The zener voltage are graded according to the intermational E24
standed. Smaller voltage tolerances and higher zener voltage
on request
MECHANICAL DATA
. Case: Mini-MELF(SOD-80) glass case
. weight: Approx. 0.05 gram
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25 )
Symbols Value Units
Zener current see table "Characteristics"
Power dissipation at TA=25 Ptot mW
Junction temperature TJ
Storage temperature range TSTG
1)Valid provided that a distance of 8mm from case are kept at ambient temperature
500 1)
175
-55 to +175
ELECTRCAL CHARACTERISTICS(TA=25 )
Symbols Min Typ Max Units
Thermal resistance junction to ambient R JA 300 1) K/W
1) Valid provided that a distance at 8mm from case are kept at ambient temperature
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 8
CE ZMM1 THRU ZMM200
ZMM1 THRU ZMM200 SILICON PLANAR ZENER DIODES
CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES
Type
ZMM1
ZMM2.0
ZMM2.4
ZMM2.7
ZMM3.0
ZMM3.3
ZMM3.6
ZMM3.9
ZMM4.3
ZMM4.7
ZMM5.1
ZMM5.6
ZMM6.2
ZMM6.8
ZMM7.5
ZMM8.2
ZMM9.1
ZMM10
ZMM11
ZMM12
ZMM13
ZMM15
ZMM16
ZMM18
ZMM20
ZMM22
ZMM24
ZMM27
ZMM30
ZMM33
ZMM36
ZMM39
ZMM43
ZMM47
ZMM51
ZMM56
ZMM62
ZMM68
ZMM75
ZMM82
ZMM91
ZMM100
ZMM110
ZMM120
ZMM130
ZMM150
ZMM160
ZMM180
ZMM200
Zener Voltage range 1) Dynamic resistance 1)
Vznom 3) TKVZ
3)
v mA V mA A A V %/K
0.75 0.7…0.8 <8 <50 -- -- --
2.0 1.9…2.1 <100 <200
2.4 2.28…2.56 <50 <100
2.7 2.5…2.9
3.0 2.8…3.2
3.3 3.1…3.5
3.6 3.4…3.8 <2
3.9 3.7…4.1 <2
4.3 4.0…4.6 <75
4.7 4.4…5.0 <60
5.1 4.8…5.4 <35 <550
5.6 5.2…6.0 <25 <450
6.2 5.8…6.6 <10 <200 2
6.8 6.4…7.2 <8 <150 3
7.5 7.0…7.9 <7 5
8.2 7.7…8.7 <7 6.2
9.1 8.5…9.6 <10 6.8 0.03…0.1
10 9.4…10.6 <15 <70 7.5 0.03…0.11
11 10.4…11.6 <20 <70 8.2 0.03…0.11
12 11.4…12.7 <20 <90 9.1 0.03…0.11
13 12.4…14.1 <26 <110 10 0.03…0.11
15 13.8…15.6 <30 <110 11 0.03…0.11
16 15.3…17.1 <40 <170 12 0.03…0.11
18 16.8…19.1 <50 <170 13 0.03…0.11
20 18.8…21.2 <55 15 0.03…0.11
22 20.8…23.3 <55 16
24 22.8…25.6 18
27 25.1…28.9 20
30 28…32 22
33 31…35 24
36 34…38 27
39 37…41 30
43 40…46 33
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
IZT rZjt and rZjk at IZK
<85
5
<80
<90
44…50 <110 <600 36
48...54 <125 39
2.5
1
52…60 <135 43
58…66 <150 47
64…72 <200 51
70…79. <250 56
77…87 <300 <1500 0.25 62
85…96 <450 <2000 68
94…106 <450 75
104…116 <600 82
114…127. <800 <5500 91
124…141 <950 <6000 100
138…156 <1250 <6500 110
153…171 <1400 <7000 120
168…191 <1700 <8500 130
188…212 <2000 <10000 150
<600
<50
<220
<500
<700
<1000
<5000
Maximum reverse Leakage Current
IR and IR at VR 2)
<10
<4 -0.08…-0.05
<2 -0.08…-0.05
<1
<0.5
1
<0.1
0.1
<50
<40
<20
<10
<2
<5
<10
1
of zener voltage
-0.26…-0.23
-0.09…-0.06
-0.09…-0.06
-0.09…-0.06
-0.08…-0.05
-0.08…-0.05
-0.06…-0.03
-0.05…+0.05
-0.02…+0.02
-0.05…+0.05
0.03…0.06
0.03…0.07
0.03…0.08
0.03…0.09
0.04…0.12
0.05…0.12
1) Tested with pluse tp=20ms
2) Valid provided that electrodes are kept at amibent temperature
3) The ZMM1 is a silicon diode with operation in forward direction. Hence,the index of all parameters should be "F" instead of "Z",
Connect the cathode to the negative pole.
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 8
CE ZMM1 THRU ZMM200
CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES
ZMM1…ZMM200 SILICON PLANER ZENER DIODES
BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT (PULSED)
BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT (PULSED)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 3 of 8
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