![](/html/c0/c08a/c08acb5cefbb9abc839038d18c3bcec31ef106d4548be2b6deef57d996b0a35a/bg1.png)
2SA1036KPT
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Medium Power PNP Transistor
VOLTAGE 32 Volts CURRENT 0.5 Ampere
APPLICATION
FEATURE
* Surface mount package. (SOT-23)
* Low saturation voltage V
CE(sat)=-0.4V(max.)(IC=-100mA)
* Low cob. Cob=7.0pF(Typ.)
CONSTRUCTION
* PNP Silicon Transistor
* Epitaxial planner type
* Medium Power Amplifier .
2002-10
* PC= 200mW (mounted on ceramic substrate).
* High saturation current capability.
CIRCUIT
(2)E
(3)C
(1)B
Note
1.Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS CONDITION
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Open Emitter
Open Base
Open Collector
Collector Current DC
Peak Collector Current
Peak Base Current
Total Power Dissipation TA ≤ 25OC; Note 1
Storage Temperature
Junction Temperature
Operating Ambient Temperature
SYMBOL
VCBO
VCEO
VEBO
IBM
TAMB
TJ
TSTG
ICM
IC
MIN. MAX. UNITS
- -40
Volts
Volts
Volts
mAmps
mAmps
mAmps
mW
o
C
o
C
o
C
- -32
- -5
- -500
- -500
- -10
-
300
-55 +150
- +150
-55 +150
PTOT
SOT-23
* HFE(Q):TT
* HFE(R):2F-
MARKING
* HFE(P):ST
.119
(
3.04
)
.007
(
0.177)
.002
(
0.05
)
.110
(
2.80
)
.103 (2.64
)
.028 (0.70
)
.020 (0.50
)
.055 (1.40
)
.047 (1.20
)
.045 (1.15
)
.033 (0.85
)
.086 (2.20)
.082
(
2.10
)
.041
(
1.05
)
.019
(
0.50)
.018
(
0.30
)
.033
(
0.85
)
.066
(
1.70
)
(1)
(2)
(3)
Dimensions in inches and (millimeters)
SOT-23
![](/html/c0/c08a/c08acb5cefbb9abc839038d18c3bcec31ef106d4548be2b6deef57d996b0a35a/bg2.png)
RATING CHARACTERISTICS ( 2SA1036KPT )
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
PARAMETERS CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
IE=0; VCB=-20V
IC=0; VEB=-4V
VCE=-3V; Note 1
IC=-10mA; Note 2
Collector-Emitter Saturation Voltage IC=-100mA; IB=-10mA
Base-Emitter Saturatio Voltage IC=-100mA; IB=-10mA
IE=ie=0; VCB=-10V;
f=1MHz
IC=2mA; VCE=-10V;
f=100MHz
Output Collector Capacitance
Transition Frequency
SYMBOL
ICBO
ICEO
hFE
Cob
fT
VBEsat
VCEsat
MIN. MAX.TYPE UNITS
- -1.0
uA
uA
Volts
mVolts
pF
MHz
-
- -1.0-
82 390-
- -0.4-
- -1.1-
- -7
- -200
Note :
1. Pulse test: tp ≤ 300uSec; δ≤0.02.
2. hFE: Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (1)
Fig.3 Grounded emitter output
characteristics (2)
RATING CHARACTERISTIC CURVES ( 2SA1036KPT )
-0.8-0.20 -0.4 -1.0 -1.2 -1.4 -1.6 -1.8-0.6
-0.1
-0.2
-0.5
-1
-2
-5
-10
-20
-50
-100
-200
-500
-1000
Ta=100
O
C
25
O
C
-55
O
C
V
CE
=-3V
COLLECTOR CURRENT : I
C
(
mA)
BASE TO EMITTER VOLTAGE : V
BE
(
V)
-10 -2 -3 -4 -5
0
-100
-20
-40
-60
-80
-1
mA
-0.
9mA
-
0
.8
mA
-0.7m
A
-0
.
6
mA
-0.
5m
A
-0.4mA
-0.3m
A
-0.
2mA
-0.
10m
A
I
B
=
0A
Ta=25
O
C
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
-0 -10-5
0
-500
-400
-300
-200
-100
-5.0mA
-4.5mA
-4.0mA
-3.5mA
-3.0mA
-0.5mA
-1.0mA
-1.5mA
-2.0mA
-2.5mA
I
B
=
0A
Ta=25
O
C
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)