Champion CMT2301 Service Manual

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P-C

GENERAL DESCRIPTION

The CMT2301 is the P-Channel logic enhancement mode

power field effect transistors are produced using high cell

density, DMOS trench technology.

This high density process is especially tailored to minimize

on-state resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook computer

power management and other battery powered circuits, and

low in-line power loss are needed in a very small outline

surface mount package.

APPLICATIONS

 Power Management in Notebook

 Portable Equipment

 Battery Powered System

 DC/DC Converter

 Load Switch

 DSC

 LCD Display inverter

PIN CONFIGURATION

SOT-23-3

Top View

3

CMT2301

HANNEL ENHANCEMENT MODE MOSFET

FEATURES

 -20V/-2.3A ,R

 -20V/-1.9A ,R

 Super high density cell design for extremely low R

 Exceptional on-resistance and maximum DC current

capability

 SOT-23-3 package design

SYMBOL

=130 m@VGS=-4.5V

DS(ON)

=190 m@VGS=-2.5V

DS(ON)

D

G

DRAIN

GATE

1

SOURCE

2

P-Channel MOSFET

ORDERING INFORMATION

Part Number Package

CMT2301M233 SOT-23-3

CMT2301GM233* SOT-23-3

*Note: G : Suffix for Pb Free Product

S

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CMT2301

HANNEL ENHANCEMENT MODE MOSFET

P-C

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Drain- to- Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current(TJ=150℃)

TA=25℃ -2.5

T

=70℃

A

Pulsed Drain Current I

Continuous Source Current(Diode Conduction) I

Power Dissipation

TA=25℃ 1.25

T

=70℃

A

Operating Junction Temperature T

Storage Temperature Range T

Thermal Resistance-Junction to Ambient R

DSS

GSS

I

DM

P

STG

D

S

D

J

JA

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃.

CMT2301

Characteristic Symbol Min Typ Max Units

Static

Drain-Source Breakdown Voltage

= 0 V, ID = -250μA)

(V

GS

Gate Threshold Voltage

= VGS, ID = -250μA)

(V

DS

V

(BR)DSS

V

Gate Leakage Current

=0 V, VGS = ±8 V)

(V

DS

Zero Gate Voltage Drain Current

= -20 V, VGS = 0 V)

(V

DS

= -20 V, VGS = 0 V, TJ = 55℃)

(V

DS

On-State Drain Current

(V

≤ -5 V, V

DS

≤ -5 V, V

DS

= -4.5V)

GS

= -2.5V)

GS

I

Drain-Source On-Resistance

= -4.5 V, ID = -2.8A)

(V

GS

= -2.5 V, ID = -2.0A)

(V

GS

R

Forward Transconductance (VDS = -5 V, ID = -2.8V) g

Diode Forward Voltage (IS=-1.6A,VGS=0V) V

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance

Turn-On Time

Turn-Off Time

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge

(V

= -6 V, VGS =-0V,

DS

f = 1.0 MHz)

(V

= -6 V,RL=6

DD

= -1.0 A,V

I

D

= 6)

R

G

(V

= -6 V, ID = -2.8 A,

DS

=-4.5V)

V

GS

= -4.5 V,

GEN

t

GS(th)

I

GSS

I

DSS

D(on)

DS(on)

FS

SD

iss

oss

C

rss

d(on)

tr 36 60

d(off)

tf 34 60

g

gs

Q

gd

-20

-0.45 -1.5

±100

-6

-3

6.5 S

-0.8 -1.2 V

415

223

87

13 25

42 70

5.8 10

0.85

1.7

-20 V

±8 V

-1.5

-10 A

-1.6 A

0.8

150 ℃

-55/150 ℃

120 ℃/W

-1

-10

0.105

0.145

0.13

0.19

A

W

V

nA

μA

A



pF

ns

nC

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TYPICAL CHARACTERISTICS

CMT2301

HANNEL ENHANCEMENT MODE MOSFET

P-C

2005/01/05 Champion Microelectronic Corporation Page 3