Champion CMT2301 Service Manual

查询CMT2301供应商查询CMT2301供应商

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GENERAL DESCRIPTION

The CMT2301 is the P-Channel logic enhancement mode

power field effect transistors are produced using high cell

density, DMOS trench technology.

This high density process is especially tailored to minimize

on-state resistance.

These devices are particularly suited for low voltage

application such as cellular phone and notebook computer

power management and other battery powered circuits, and

low in-line power loss are needed in a very small outline

surface mount package.

APPLICATIONS

 Power Management in Notebook

 Portable Equipment

 Battery Powered System

 DC/DC Converter

 Load Switch

 DSC

 LCD Display inverter

PIN CONFIGURATION

SOT-23-3

Top View

3

CMT2301

HANNEL ENHANCEMENT MODE MOSFET

FEATURES

 -20V/-2.3A ,R

 -20V/-1.9A ,R

 Super high density cell design for extremely low R

 Exceptional on-resistance and maximum DC current

capability

 SOT-23-3 package design

SYMBOL

=130 m@VGS=-4.5V

DS(ON)

=190 m@VGS=-2.5V

DS(ON)

DS(ON)

D

G

DRAIN

GATE

1

SOURCE

2

P-Channel MOSFET

ORDERING INFORMATION

Part Number Package

CMT2301M233 SOT-23-3

CMT2301GM233* SOT-23-3

*Note: G : Suffix for Pb Free Product

S

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CMT2301

HANNEL ENHANCEMENT MODE MOSFET

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ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Drain- to- Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current(TJ=150℃)

TA=25℃ -2.5

T

=70℃

A

Pulsed Drain Current I

Continuous Source Current(Diode Conduction) I

Power Dissipation

TA=25℃ 1.25

T

=70℃

A

Operating Junction Temperature T

Storage Temperature Range T

Thermal Resistance-Junction to Ambient R

DSS

GSS

I

DM

P

STG

D

S

D

J

JA

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃.

CMT2301

Characteristic Symbol Min Typ Max Units

Static

Drain-Source Breakdown Voltage

= 0 V, ID = -250μA)

(V

GS

Gate Threshold Voltage

= VGS, ID = -250μA)

(V

DS

V

(BR)DSS

V

Gate Leakage Current

=0 V, VGS = ±8 V)

(V

DS

Zero Gate Voltage Drain Current

= -20 V, VGS = 0 V)

(V

DS

= -20 V, VGS = 0 V, TJ = 55℃)

(V

DS

On-State Drain Current

(V

(V

≤ -5 V, V

DS

≤ -5 V, V

DS

= -4.5V)

GS

= -2.5V)

GS

I

Drain-Source On-Resistance

= -4.5 V, ID = -2.8A)

(V

GS

= -2.5 V, ID = -2.0A)

(V

GS

R

Forward Transconductance (VDS = -5 V, ID = -2.8V) g

Diode Forward Voltage (IS=-1.6A,VGS=0V) V

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance

Turn-On Time

Turn-Off Time

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge

(V

= -6 V, VGS =-0V,

DS

f = 1.0 MHz)

(V

= -6 V,RL=6

DD

= -1.0 A,V

I

D

= 6)

R

G

(V

= -6 V, ID = -2.8 A,

DS

=-4.5V)

V

GS

= -4.5 V,

GEN

t

t

GS(th)

I

GSS

I

DSS

D(on)

DS(on)

FS

SD

iss

oss

C

rss

d(on)

tr 36 60

d(off)

tf 34 60

g

gs

Q

gd

-20

-0.45 -1.5

±100

-6

-3

6.5 S

-0.8 -1.2 V

415

223

87

13 25

42 70

5.8 10

0.85

1.7

-20 V

±8 V

-1.5

-10 A

-1.6 A

0.8

150 ℃

-55/150 ℃

120 ℃/W

-1

-10

0.105

0.145

0.13

0.19

A

W

V

V

nA

μA

A



pF

ns

nC

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TYPICAL CHARACTERISTICS

CMT2301

HANNEL ENHANCEMENT MODE MOSFET

P-C

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TYPICAL CHARACTERISTICS

CMT2301

HANNEL ENHANCEMENT MODE MOSFET

P-C

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TYPICAL CHARACTERISTICS

CMT2301

HANNEL ENHANCEMENT MODE MOSFET

P-C

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PACKAGE DIMENSION

D

CMT2301

HANNEL ENHANCEMENT MODE MOSFET

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SOT-23-3

3

E

E1

12

e

e1

θ

1

θ

2

c

Base Metal

b

A2

A

A1

See Section B-B

b1

b

Section B-B

c1

With Plating

A
A1
A2

b
b1
c
c1
D
E
E1
L
L1
e
e1

θ

θ1

θ2

θ

L

L1

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CMT2301

HANNEL ENHANCEMENT MODE MOSFET

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IMPORTANT NOTICE

Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any

integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information

to verify, before placing orders, that the information being relied on is current.

A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or

environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for

use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is

understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the

customer should provide adequate design and operating safeguards.

HsinChu Headquarter

5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T EL : [phone] T EL : [phone]
FA X : [phone] F A X: [phone]

Sales & Marketing

11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan

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