CET CEG9926 Datasheet
CEG9926
Nov. 2002
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 4.5A , R
Super high dense cell design for extremely low R
High power and current handing capability.
TSSOP-8 for Surface Mount Package.
ȀȀȀ
DS(ON)
=30m @VGS=4.5V.
Ω
DS(ON)
=40m @VGS=2.5V.
R
Ω
S
D
2
G
2
S
2
2
TSSOP-8
DS(ON)
D1
1
.
S1
2
S1
3
G
1
4
G
1
S
1
S
1
D
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
a
b
Symbol
V
DS
GS
V
D
I
DM
I
Limit Unit
Ć
Ć
Ć
20
8
4.5
25
V
V
A
A
D2
8
7
S2
6
S2
G
2
5
9
Drain-Source Diode Forward Current
Maximum Power Dissipation
a
Operating Junction and Storage
a
T
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
9-17
S
I
P
D
J,TSTG
įJA
R
1.7
ȑȎȐ
-55 to 150
125
A
W
C
C
/W
CEG9926
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
C
Typ
Parameter
Symbol
OFF CHARACTERISTICS
Condition
Min
Max
Unit
9
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
b
Gate Threshold Voltage
Drain-Source On-State Resistance
On-State Drain Current
BV
DSS
DSS
I
GSS
I
V
GS(th)
DS(ON)
R
D(ON)
I
g
FS
C
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
C
SWITCHING CHARACTERISTICS
VGS=0V,ID=250µA
VDS=20V, VGS=0V
VGS=Ć8V, VDS=0V
VDS=VGS,ID=250µA
VGS=4.5V, ID=4.5A
GS
=4.0V, ID=5A
V
VGS=2.5V, ID=3.5A
VDS=5V, VGS=4.5V
VDS=10V, ID=4.5A
DS
=8V,VGS=0V
V
f =1.0MH
Z
20
1
ĆȑȐȐ
0.5 1.0
30
24
23
32
40
10
10
500
300
140
V
µA
nA
V
mΩȀȀȀ
mΩ
mΩ
A
SForward Transconductance
P
F
P
F
P
F
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
D(ON)
t
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
DD
=10V,
V
I
D
=1A,
GEN
= 4.5V,
V
GEN =
Ω
6
R
VDS=10V, ID=4.5A,
VGS=4.5V
9-18
40 ns
20
18 40
60
108
5628
15
10
2.3
2.9
ns
ns
ns
nC
nC
nC
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