CET CEDF634, CEUF634 Service Manual
CEDF634/CEUF634
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
250V, 6.7A, R
Super high dense cell design for extremely low R
= 450mΩ @VGS = 10V.
DS(ON)
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
G
S
CEU SERIES
TO-252(D-PAK)
G
CED SERIES
TO-251(I-PAK)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ TC = 25 C
a
- Derate above 25 C
D
S
= 25 C unless otherwise noted
c
Symbol
V
DS
V
GS
I
D
I
DM
P
D
G
Limit
±30
0.37
Operating and Store Temperature Range TJ,Tstg -55 to 150
250
6.7
26
46
D
S
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
2.7RθJC
50
2005.January http://www.cetsemi.com
6 - 138
C/W
C/W
CEDF634/CEUF634
Electrical Characteristics T
= 25 C unless otherwise noted
c
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
R
BV
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
I
DSS
I
GSSF
IGSSR
GS(th)
DS(on)
g
FS
iss
oss
rss
t
r
t
f
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
b
I
S
V
SD
Test Condition
VGS = 0V, ID = 250µA
VDS = 250V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5.1A
VDS = 50V, ID = 5.1A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
VDD = 125V, ID = 5.6A,
VGS = 10V, R
GEN
= 12Ω
VDS = 200V, ID =5.6A,
VGS = 10V
VGS = 0V, IS = 8.1A
Typ Max
250
22 4
4.4
630
100
40
19
11
46
10
26
5
11
25
100
-100
450
40
30
90
30
33
8.1
1.50.9
V
µA
nA
nA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
6
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