CET CEDF634, CEUF634 Service Manual

CEDF634/CEUF634

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

250V, 6.7A, R

Super high dense cell design for extremely low R

= 450mΩ @VGS = 10V.

DS(ON)

DS(ON)

.

High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.

D

G

S
CEU SERIES
TO-252(D-PAK)

G

CED SERIES
TO-251(I-PAK)

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ TC = 25 C

a

- Derate above 25 C

D

S

= 25 C unless otherwise noted

c

Symbol

V

DS

V

GS

I

D

I

DM

P

D

G

Limit

±30

0.37

Operating and Store Temperature Range TJ,Tstg -55 to 150

250

6.7
26
46

D

S

Units

V
V
A
A

W

W/ C

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient

RθJA

2.7RθJC
50

2005.January http://www.cetsemi.com
6 - 138

C/W
C/W

CEDF634/CEUF634

Electrical Characteristics T

= 25 C unless otherwise noted

c

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse

On Characteristics

b

Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance

Dynamic Characteristics

c

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Switching Characteristics

c

Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

V
R

BV

C
C
C

t

d(on)

t

d(off)

Q
Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

g

FS

iss
oss
rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.

b

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA
VDS = 250V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V

VGS = VDS, ID = 250µA
VGS = 10V, ID = 5.1A

VDS = 50V, ID = 5.1A

VDS = 25V, VGS = 0V,
f = 1.0 MHz

VDD = 125V, ID = 5.6A,
VGS = 10V, R

GEN

= 12Ω

VDS = 200V, ID =5.6A,
VGS = 10V

VGS = 0V, IS = 8.1A

Typ Max

250

22 4

4.4

630
100

40

19
11
46
10
26

5

11

25

100

-100

450

40
30
90
30
33

8.1

1.50.9

V

µA

nA
nA

V

mΩ

S

pF
pF
pF

ns
ns
ns

ns
nC
nC
nC

A
V

6

6 - 139

12

VGS=10,9,8,7V

10

8

6

4

ID, Drain Current (A)

2

0

0 1 2 43 5 6

VDS, Drain-to-Source Voltage (V)

CEDF634/CEUF634

1

10

V

=6V

GS

V

=5V

GS

V

=4V

GS

TJ=150 C

0

10

ID, Drain Current (A)

25 C

-1

10

2 4 6 8

VGS, Gate-to-Source Voltage (V)

-55 C

1.VDS=40V

2.Pulse Test
10

Figure 1. Output Characteristics

1200

1000

800

600

400

C, Capacitance (pF)

200

0

0 10 20 30 40 50

C

iss

C

oss

C

rss

VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 2. Transfer Characteristics

3.0
ID=5.1A

VGS=10V

2.5

2.0

1.5

1.0

RDS(ON), Normalized

0.5

RDS(ON), On-Resistance(Ohms)

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

VSD, Body Diode Forward Voltage (V)

1.2 1.4

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

6 - 140

10

VDS=200V
ID=5.6A

8

6

4

2

VGS, Gate to Source Voltage (V)

0

0 8 16 24 28

4 12 20

Qg, Total Gate Charge (nC)

CEDF634/CEUF634

2

10

R

Limit

DS(ON)

1

10

0

10

ID, Drain Current (A)

-1

10

TC=25 C
TJ=150 C

Single Pulse

0

10

10

VDS, Drain-Source Voltage (V)

100ms

1ms

10ms

DC

1

2

10

3

10

6

Figure 7. Gate Charge

IN

V

D

V

GS

GEN

R

G

S

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

10

-2

-5

10

0.01

Single Pulse

-4

10

r(t),Normalized Effective

Transient Thermal Impedance

DD

V

R

L

OUT

V

-3

10

Square Wave Pulse Duration (sec)

Figure 8. Maximum Safe

on

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

V

t

d(on)

OUT

IN

10%

PULSE WIDTH

Figure 10. Switching Waveforms

PDM

-2

10

-1

10

Operating Area

t

off

d(off)

t

90%

90%

t1

t2

1. RθJC (t)=r (t) * RθJC

2. RθJC=See Datasheet

3. TJM-TC = P* RθJC (t)

4. Duty Cycle, D=t1/t2

0

10

f

t

1

10

Figure 11. Normalized Thermal Transient Impedance Curve

6 - 141