MPQ2222
MPQ2222A
NPN SILICON QUAD TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ2222 and
MPQ2222A types are comprised of four independent
NPN silicon transistors mounted in a 14-pin DIP,
designed for general purpose amplifier and switching
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL MPQ2222 MPQ2222A UNITS
Collector-Base Voltage V
CBO
60 75 V
Collector-Emitter Voltage V
CEO
40 40 V
Emitter-Base Voltage V
EBO
5.0 6.0 V
Continuous Collector Current IC 500 mA
Power Dissipation (per transistor) PD 650 mW
Power Dissipation (total package) PD 1.9 W
Operating and Storage Junction Temperature TJ, T
stg
-65 to +150 °C
Thermal Resistance (total package) ΘJA 66 °C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
MPQ2222 MPQ2222A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I
CBO
VCB=50V - 50 - - nA
I
CBO
VCB=60V - - - 10 nA
I
EBO
VEB=3.0V - 100 - 100 nA
BV
CBO
IC=10μA 60 - 75 - V
BV
CEO
IC=10mA 40 - 40 - V
BV
EBO
IE=10μA 5.0 - 6.0 - V
V
CE(SAT)
IC=150mA, IB=15mA - 0.4 - 0.3 V
V
CE(SAT)
IC=300mA, IB=30mA - 1.6 - - V
V
CE(SAT)
IC=500mA, IB=50mA - - - 1.0 V
V
BE(SAT)
IC=150mA, IB=15mA - 1.3 0.6 1.2 V
V
BE(SAT)
IC=300mA, IB=30mA - 2.6 - - V
V
BE(SAT)
IC=500mA, IB=50mA - - - 2.0 V
hFE V
CE
=10V, IC=0.1mA - - 35 -
hFE V
CE
=10V, IC=1.0mA - - 50 -
hFE V
CE
=10V, IC=10mA 75 - 75 -
hFE V
CE
=10V, IC=150mA 100 300 100 300
hFE V
CE
=10V, IC=300mA 30 - - -
hFE V
CE
=10V, IC=500mA - - 40 -
fT V
CE
=20V, IC=20mA, f=100MHz 200 - 200 - MHz
Cob V
CB
=10V, IE=0, f=1.0MHz - 8.0 - 8.0 pF
Cib V
EB
=0.5V, IC=0, f=1.0MHz - 30 - 30 pF
tr V
CC
=30V, VBE=0.5V, IC=150mA, IB1=15mA - - - 35 ns
ts V
CC
=30V, IC=150mA, IB1=IB2=15mA - - - 285 ns
TO-116 CASE
R2 (30-January 2012)
www.centralsemi.com