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查询CMSD2004S供应商
TM
NEW
SUPER
SUPER
CMSD2004S
HIGH VOLTAGE
SWITCHING DIODE
TM
mini
SOT-323 CASE
The following configurations are available:
CMSD2004S DUAL, IN SERIES MARKING CODE: B6D
MAXIMUM RATINGS (TA=25°C) SYMBOL UNITS
Continuous Reverse Voltage V
Peak Repetitive Reverse Voltage V
Peak Repetitive Reverse Current I
Continuous Forward Current I
Peak Repetitive Forward Current I
Forward Surge Current, tp=1 ms I
Forward Surge Current, tp=1 s I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Q
Semiconductor Corp.
DESCRIPTION
The CENTRAL SEMICONDUCTOR CMSD2004S
type is a silicon switching diode manufactured by
the epitaxial planar process, designed for
applications requiring high voltage capability.
R
RRM
O
F
FRM
FSM
FSM
250 mW
D
stg
JA
240 V
300 V
200 mA
225 mA
625 mA
4000 mA
1000 mA
-65 to +150 °C
500 °C/W
Central
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNIT
BV
I
R
I
R
I
R
I
R
V
C
t
rr
R
F
T
IR=100mA 300 V
VR=200V - nA
VR=200V, TA=150°C - mA
VR=240V 100 nA
VR=240V, TA=150°C 100 mA
IF=100mA 1.0 V
VR=0, f=1 MHz 5.0 pF
IF=IR=30mA, RECOV. TO 3.0mA,RL=100W 50 ns
280
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All dimensions in inches (mm).
TOP VIEW
LEAD CODE
&
281
&
R2
R3