CMPTA13 CMPTA14 NPN
CMPTA63 CMPTA64 PNP
SILICON COMPLEMENTARY
DARLINGTON TRANSISTORS
SOT-23 CASE
Central
Semiconductor Corp.
TM
R4 (26-September 2002)
Description:
The CENTRAL SEMICONDUCTOR CMPTA13,
CMPTA63 series types are complementary
silicon darlington transistors manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for
applications requiring extremely high gain.
MARKING CODES:
CMPTA13: C1M CMPTA14: C1N
CMPTA63: C2U CMPTA64: C2V
MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Collector-Base Voltage V
CBO
30 V
Collector-Emitter Voltage V
CES
30 V
Emitter-Base Voltage V
EBO
10
V
Continuous Collector Current I
C
500
mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
VCB=30V 100 nA
I
EBO
VBE=10V 100 nA
BV
CES
IC=100µA 30 V
V
CE(SAT)
IC=100mA, IB=0.1mA 1.5 V
V
BE(ON)
VCE=5.0V, IC=100mA 2.0 V
h
FE
VCE=5.0V, IC=10mA (CMPTA13, CMPTA63) 5,000
h
FE
VCE=5.0V, IC=10mA (CMPTA14, CMPTA64) 10,000
h
FE
VCE=5.0V, IC=100mA (CMPTA13, CMPTA63) 10,000
h
FE
VCE=5.0V, IC=100mA (CMPTA14, CMPTA64) 20,000
f
T
VCE=5.0V, IC=10mA, f=100MHz 125 MHz