Central CMPTA06, CMPTA56 Service Manual
MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
80 V
Emitter-Base Voltage V
EBO
4.0 V
Collector Current I
C
500 mA
Base Current I
B
100 mA
Peak Base Current I
BM
200 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
VCB=80V 100 nA
I
CBO
VCB=80V, TA=150°C 20 µA
I
CEO
VCE=60V 100 nA
BV
CEO
IC=1.0mA 80 V
BV
EBO
IE=100µA 4.0 V
V
CE(SAT)
IC=100mA, IB=10mA 0.25 V
V
BE(ON)
VCE=1.0V, IC=100mA 1.20 V
h
FE
VCE=1.0V, IC=10mA 100
h
FE
VCE=1.0V, IC=100mA 100
f
T
VCE=2.0V, IC=10mA, f=100MHz (CMPTA06) 100 MHz
f
T
VCE=1.0V, IC=100mA, f=100MHz(CMPTA56) 50 MHz
CMPTA06 NPN
CMPTA56 PNP
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
SOT-23 CASE
Central
Semiconductor Corp.
TM
R5 (13-November 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA06,
CMPTA56 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for small signal general
purpose and switching applications.
MARKING CODES: CMPTA06 : C1G
CMPTA56 : C2G
查询CMPTA06供应商
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPTA06 NPN
CMPTA56 PNP
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
R5 (13-November 2002)
MARKING CODE:
CMPTA06: C1G
CMPTA56: C2G
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
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