Central CMPT930 Service Manual

查询CMPT930供应商
CMPT930
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
TM
NPN SILICON TRANSISTOR
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V Collector-Emitter Voltage V Emitter-Base Voltage V Collector Current I Power Dissipation P Operating and Storage Junction Temperature TJ,T Thermal Resistance Θ
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
CBO CEO EBO
C
D
stg
JA
DESCRIPTION
The CENTRAL SEMICONDUCTOR CMPT930 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier applications.
Marking Code is C1X.
-65 to +150
45 V 45 V
5.0 V 30 mA 350 mW
o
C
357
o
C/W
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
I
CEO
I
CES
I
EBO
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
h
FE
h
FE
f
T
C
ob
NF VCE=5.0V, IC=10mA, RS=10k,
VCB=45V 10 nA VCE=5.0V 10 nA VCE=45V 10 nA VEB=5.0V 10 nA IC=10µA 45 V IC=10mA 45 V IE=10µA 5.0 V IC=10mA, IB=0.5mA 1.0 V IC=10mA, IB=0.5mA 0.6 1.0 V VCE=5.0V, IC=10µA 100 300 VCE=5.0V, IC=500µA 150 VCE=5.0V, IC=10mA 600 VCE=5.0V, IC=500mA, f=30MHz 30 MHz VCB=5.0V, IE=0, f=1.0MHz 8.0 pF
f=10Hz to 15.7kHz 3.0 dB
156
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
157
R2
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