查询CMPT8099供应商
CMPT8099 NPN
CMPT8599 PNP
COMPLEMENTARY
SILICON TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL CMPT8099 CMPT8599 UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Q
CBO
CEO
EBO
C
D
JA
stg
TM
Central
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT8099, CMPT8599 types are
Complementary Silicon Transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for general purpose audio amplifier
applications.
Marking Codes are CKB and C2W
Respectively.
80 80 V
80 80 V
6.0 5.0 V
500 mA
350 mW
-65 to +150 oC
357 oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
CMPT8099 CMPT8599
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I
CBO
I
EBO
I
EBO
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(ON)
h
FE
h
FE
VCB=80V 0.1 0.1 mA
VBE=6.0V 0.1 - mA
VBE=4.0V - 0.1 mA
IC=100mA 80 80 V
IC=10mA 80 80 V
IE=10mA 6.0 5.0 V
IC=100mA, IB=5.0mA 0.4 0.4 V
IC=100mA, IB=10mA 0.3 0.3 V
VCE=5.0V, IC=10mA 0.6 0.8 0.6 0.8 V
VCE=5.0V, IC=1.0mA 100 300 100 300
VCE=5.0V, IC=10mA 100 100
194
CMPT8099 CMPT8599
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
h
f
C
C
FE
T
ob
ib
All dimensions in inches (mm).
VCE=5.0V, IC=100mA 75 75
VCE=5.0V, IC=10mA, f=100MHz 150 150 MHz
VCB=10V, IE=0, f=1.0MHz 6.0 4.5 pF
VBE=0.5V, IC=0, f=1.0MHz 25 30 pF
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
195
R2