Central CMPT651 Service Manual
MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
2.0 A
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
VCB=80V 100 nA
I
EBO
VEB=4.0V 100 nA
BV
CBO
I
C
=100µA80 V
BV
CEO
IC=10mA 60 V
BV
EBO
IE=10µA 5.0 V
V
CE(SAT)
IC=0.5A, IB=50mA 100 mV
V
CE(SAT)
IC=1.0A, IB=100mA 200 mV
V
CE(SAT)
IC=2.0A, IB=200mA 400 mV
V
BE(SAT)
IC=1.0A, IB=100mA 1.2 V
V
BE(ON)
VCE=2.0V, IC=1.0A 1.0 V
h
FE
VCE=2.0V, IC=50mA 75
h
FE
VCE=2.0V, IC=500mA 100 300
h
FE
VCE=2.0V, IC=1.0A 75
h
FE
VCE=2.0V, IC=2.0A 40
f
T
VCE=5.0V, IC=50mA, f=100MHz 75 MHz
CMPT651
SURFACE MOUNT
NPN HIGH CURRENT TRANSISTOR
SOT-23F CASE
Central
Semiconductor Corp.
TM
R0 ( 03-January 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT651
type is a high current NPN Silicon Transistor,
epoxy molded in a space saving Power SOT23F surface mount package, designed for high
current applications.
Marking code is C651.
查询CMPT651供应商
Central
Semiconductor Corp.
TM
SOT-23F CASE - MECHANICAL OUTLINE
CMPT651
SURFACE MOUNT
NPN HIGH CURRENT
TRANSISTOR
R0 ( 03-January 2002)
LEAD CODE:
1) Base
2) Emitter
3) Collector
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