查询CMPT6428供应商
CMPT6428
CMPT6429
NPN SILICON TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL CMPT6428 CMPT6429 UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CEO
EBO
C
D
JA
stg
TM
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT6428, CMPT6429 types are NPN Silicon
Transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for high gain
amplifier applications.
Marking Codes are C1K and C1L
Respectively.
60 55 V
50 45 V
6.0 V
200 mA
350 mW
-65 to +150 oC
357 oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
CMPT6428 CMPT6429
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I
CBO
I
CEO
I
EBO
BV
CBO
BV
CEO
V
CE(SAT)
V
CE(SAT)
V
BE(ON)
h
FE
h
FE
h
FE
h
FE
f
T
VCB=30V 10 10 nA
VCE=30V 100 100 nA
VBE=5.0V 10 10 nA
IC=100µA 60 55 V
IC=1.0mA 50 45 V
IC=10mA, IB=0.5mA 0.20 0.20 V
IC=100mA, IB=5.0mA 0.60 0.60 V
VCE=5.0V, IC=1.0mA 0.56 0.66 0.56 0.66 V
VCE=5.0V, IC=10µA 250 500
VCE=5.0V, IC=100µA 250 650 500 1250
VCE=5.0V, IC=1.0mA 250 500
VCE=5.0V, IC=10mA 250 500
VCE=5.0V, IC=1.0mA, f=100MHz 100 700 100 700 MHz
190
CMPT6428 CMPT6429
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
C
C
ob
ib
All dimensions in inches (mm).
VCB=10V, IE=0, f=1.0MHz 3.0 3.0 pF
VBE=0.5V, IC=0, f=1.0MHz 8.0 8.0 pF
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
191
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