Central CMPT5551 Service Manual
查询CMPT5551供应商
CMPT5551
NPN SILICON TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CEO
EBO
C
D
JA
stg
TM
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT5551 type is an NPN silicon transistor
manufactured bythe epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage amplifier
applications.
Marking Code is 1FF.
180 V
160 V
6.0 V
600 mA
350 mW
-65 to +150 oC
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
I
CBO
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
V
BE(SAT)
h
FE
h
FE
h
FE
f
T
C
ob
VCB=120V 50 nA
V
IC=100µA 180 V
IC=1.0mA 160 V
IE=10µA 6.0 V
IC=10mA, IB=1.0mA 0.15 V
IC=50mA, IB=5.0mA 0.20 V
IC=10mA, IB=1.0mA 1.00 V
IC=50mA, IB=5.0mA 1.00 V
VCE=5.0V, IC=1.0mA 80
VCE=5.0V, IC=10mA 80 250
VCE=5.0V, IC=50mA 30
VCE=10V, IC=10mA, f=100MHz 100 300 MHz
VCB=10V, IE=0, f=1.0MHz 6.0 pF
120V, TA=100oC 50 µ A
CB=
186
SYMBOL TEST CONDITIONS MIN MAX UNITS
h
fe
N
F
All dimensions in inches (mm).
VCE=10V, IC=1.0mA, f=1.0kHz 50 200
VCE=5.0V, IC=200µA, RS=10Ω
f=10Hz to 15.7kHz 8.0 dB
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
187
R2
Loading...