![](/html/02/0265/02650c0b72d4c9153384e4ff3445d0c11cf4d0f5333c1b3306ef9e9a81ec0778/bg1.png)
查询CMPT5401供应商
CMPT5401
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
TM
PNP SILICON TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CEO
EBO
C
D
JA
stg
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT5401 type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage amplifier applications.
Marking Code is C2L.
160 V
150 V
5.0 V
500 mA
350 mW
-65 to +150
357 oC/W
o
C
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
I
CBO
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
V
BE(SAT)
h
FE
h
FE
h
FE
f
T
C
ob
VCB=100V 50 nA
VCB=100V, TA=150oC 50 µA
IC=100µA 160 V
IC=1.0mA 150 V
IE=10µA 5.0 V
IC=10mA, IB=1.0mA 0.2 V
IC=50mA, IB=5.0mA 0.5 V
IC=10mA, IB=1.0mA 1.0 V
IC=50mA, IB=5.0mA 1.0 V
VCE=5.0V, IC=1.0mA 50
VCE=5.0V, IC=10mA 60 240
VCE=5.0V, IC=50mA 50
VCE=10V, IC=10mA, f=100MHz 100 300 MHz
VCB=10V, IE=0, f=1.0MHz 6.0 pF
184
![](/html/02/0265/02650c0b72d4c9153384e4ff3445d0c11cf4d0f5333c1b3306ef9e9a81ec0778/bg2.png)
SYMBOL TEST CONDITIONS MIN MAX UNITS
h
fe
NF VCE=5.0V, IC=200µA, RS=10Ω
All dimensions in inches (mm).
VCE=10V, IC=1.0mA, f=1.0kHz 40 200
f=10Hz to 15.7kHz 8.0 dB
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
185
R2