Central CMPT4401, CMPT4403 Service Manual
MAXIMUM RATINGS: (TA=25°C)
SYMBOL CMPT4401 CMPT4403 UNITS
Collector-Base Voltage V
CBO
60 40 V
Collector-Emitter Voltage V
CEO
40 40 V
Emitter-Base Voltage V
EBO
6.0 5.0 V
Continuous Collector Current I
C
600 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMPT4401
CMPT4403
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I
CEV
VCE=35V, VEB=0.4V 0.1 0.1 µA
I
BEV
VCE=35V, VEB=0.4V 0.1 0.1 µA
BV
CBOIC
=100µA 60 40 V
BV
CEOIC
=1.0mA 40 40 V
BV
EBOIE
=100µA 6.0 5.0 V
V
CE(SAT)IC
=150mA, IB=15mA 0.40 0.40 V
V
CE(SAT)IC
=500mA, IB=50mA 0.75 0.75 V
V
BE(SAT)IC
=150mA, IB=15mA 0.75 0.95 0.75 0.95 V
V
BE(SAT)IC
=500mA, IB=50mA 1.2 1.3 V
h
FE
VCE=1.0V, IC=0.1mA 20 30
h
FE
VCE=1.0V, IC=1.0mA 40 60
h
FE
VCE=1.0V, IC=10mA 80 100
CMPT4401 NPN
CMPT4403 PNP
COMPLEMENTARY
SILICON TRANSISTORS
SOT-23 CASE
Central
Semiconductor Corp.
TM
R4 (26-September 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT4401,
CMPT4403 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for small signal general
purpose amplifier and switching applications.
MARKING CODES:
CMPT4401: C2X
CMPT4403: C2T
查询CMPT4401供应商
Central
Semiconductor Corp.
TM
CMPT4401 NPN
CMPT4403 PNP
COMPLEMENTARY
SILICON TRANSISTORS
R4 (26-September 2002)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES:
CMPT4401: C2X
CMPT4403: C2T
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMPT4401 CMPT4403
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
h
FE
VCE=1.0V, IC=150mA 100 300 - -
h
FE
VCE=2.0V, IC=150mA - - 100 300
h
FE
VCE=2.0V, IC=500mA 40 20
f
T
VCE=10V, IC=20mA, f=100MHz 250 200 MHz
C
ob
VCB=5.0V, IE=0, f=1.0MHz 6.5 8.5 pF
C
ib
VBE=0.5V, IC=0, f=1.0MHz 30 30 pF
h
ie
VCE=10V, I
C
=1.0mA, f=1.0kHz 1.0 15 1.5 15 kΩ
h
re
VCE=10V, IC=1.0mA, f=1.0kHz 0.1 8.0 0.1 8.0 x10-4
h
fe
VCE=10V, IC=1.0mA, f=1.0kHz 40 500 60 500
h
oe
VCE=10V, IC=1.0mA, f=1.0kHz 1.0 30 1.0 100 µmhos
t
d
VCC=30V, VBE=2.0, IC=150mA, IB1=15mA 15 15 ns
t
r
VCC=30V, VBE=2.0, IC=150mA, IB1=15mA 20 20 ns
t
s
VCC=30V, IC=150mA, IB1=IB2=15mA 225 225 ns
t
f
VCC=30V, IC=150mA, IB1=IB2=15mA 30 30 ns
SOT-23 CASE - MECHANICAL OUTLINE
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