Central CMPT3904, CMPT3906 Service Manual
MAXIMUM RATINGS: (TA=25°C)
SYMBOL CMPT3904 CMPT3906 UNITS
Collector-Base Voltage V
CBO
60 40 V
Collector-Emitter Voltage V
CEO
40 40 V
Emitter-Base Voltage V
EBO
6.0 5.0 V
Continuous Collector Current I
C
200 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMPT3904
CMPT3906
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I
CEV
VCE=30V, VEB=3.0V 50 50 nA
I
BL
VCE=30V, VEB=3.0V 50 50 nA
BV
CBO
IC=10µA 60 40 V
BV
CEO
IC=1.0mA 40 40 V
BV
EBO
IE=10µA 6.0 5.0 V
V
CE(SAT)IC
=10mA, IB=1.0mA 0.20 0.25 V
V
CE(SAT)IC
=50mA, IB=5.0mA 0.30 0.40 V
V
BE(SAT)IC
=10mA, IB=1.0mA 0.65 0.85 0.65 0.85 V
VB
E(SAT)IC
=50mA, IB=5.0mA 0.95 0.95 V
h
FE
VCE=1.0V, IC=0.1mA 40 60
h
FE
VCE=1.0V, IC=1.0mA 70 80
h
FE
VCE=1.0V, IC=10mA 100 300 100 300
h
FE
VCE=1.0V, IC=50mA 60 60
h
FE
VCE=1.0V, IC=100mA 30 30
CMPT3904 NPN
CMPT3906 PNP
COMPLEMENTARY
SILICON TRANSISTORS
SOT-23 CASE
Central
Semiconductor Corp.
TM
R4 (26-September 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3904,
CMPT3906 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for small signal general
purpose amplifier and switching applications.
MARKING CODES:
CMPT3904: C1A
CMPT3906: C2A
查询CMPT3904供应商
Central
Semiconductor Corp.
TM
CMPT3904 NPN
CMPT3906 PNP
COMPLEMENTARY
SILICON TRANSISTORS
R4 (26-September 2002)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES:
CMPT3904: C1A
CMPT3906: C2A
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMPT3904
CMPT3906
SYMBOL TEST CONDITIONS MIN MAX MIN MAX
UNITS
f
T
VCE=20V, IC=10mA, f=100MHz 300 250 MHz
C
ob
VCB=5.0V, IE=0, f=1.0MHz 4.0 4.5 pF
C
ib
VBE=0.5V, IC=0, f=1.0MHz 8.0 10 pF
h
ie
VCE=10V, I
C
=1.0mA, f=1.0kHz 1.0 10 2.0 12 kΩ
h
re
VCE=10V, IC=1.0mA, f=1.0kHz 0.5 8.0 0.1 10 x10
-4
h
fe
VCE=10V, IC=1.0mA, f=1.0kHz 100 400 100 400
h
oe
VCE=10V, I
C
=1.0mA, f=1.0kHz 1.0 40 3.0 60 µmhos
NF VCE=5.0V, IC=100µA, R
S
=1.0kΩ
f=10Hz to 15.7kHz 5.0 4.0 dB
t
d
VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA 35 35 ns
t
r
VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA 35 35 ns
t
s
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 200 225 ns
t
f
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 50 75 ns
SOT-23 CASE - MECHANICAL OUTLINE
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