Central CMPT3646 Service Manual
查询CMPT3646供应商
CMPT3646
NPN SILICON TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CES
CEO
EBO
C
D
JA
stg
TM
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT3646 type is an NPN Silicon Transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high current, ultra high speed
switching applications.
Marking code is C2R.
40 V
40 V
15 V
5.0 V
200 mA
350 mW
-65 to +150 oC
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CES
I
CES
BV
CBO
BV
CES
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
V
BE(SAT)
V
BE(SAT)
h
FE
h
FE
VCE=20V 0.5 µA
VCE=20V, TA=65oC 3.0 µA
IC=100µA 40 V
IC=10µA 40V
IC=10mA 15 V
IE=100µA 5.0 V
IC=30mA, IB=3.0mA 0.20 V
IC=30mA, IB=3.0mA, TA=65oC 0.30 V
IC=100mA, IB=10mA 0.28 V
IC=300mA, IB=30mA 0.50 V
IC=30mA, IB=3.0mA 0.75 0.95 V
IC=100mA, IB=10mA 1.20 V
IC=300mA, IB=30mA 1.70 V
VCE=0.4V, IC=30mA 30 120
VCE=0.5V, IC=100mA 25
170
SYMBOL TEST CONDITIONS MIN MAX UNITS
h
f
C
C
t
t
t
FE
T
ob
ib
on
off
S
All dimensions in inches (mm).
VCE=1.0V, IC=300mA 15
VCE=10V, IC=30mA, f=100MHz 350 MHz
VCB=5.0V, IE=0, f=1.0MHz 5.0 pF
VBE=0.5V, IC=0, f=1.0MHz 8.0 pF
VCC=10V, IC=300mA, IB1=30mA 18 ns
VCC=10V, IC=300mA, IB1=IB2=30mA 28 ns
VCC=10V, IC=IB1=IB2=10mA 18 ns
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
171
R2
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