Central CMPT3640 Service Manual

查询CMPT3640供应商
CMPT3640
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
TM
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V Collector-Emitter Voltage V Emitter-Base Voltage V Collector Current I Power Dissipation P Operating and Storage Junction Temperature TJ,T Thermal Resistance Θ
CBO CEO EBO
C
D
JA
stg
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3640 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for saturated switching applications.
Marking code is C2J.
12 V 12 V
4.0 V 80 mA 350 mW
-65 to +150 oC 357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CES
I
CES
I
B
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
V
BE(SAT)
V
BE(SAT)
h
FE
VCE=6.0V 10 nA VCE=6.0V, TA=65oC 10 µA VCE=6.0V, VEB=0 10 nA IC=100µA12 V IC=10mA 12 V IE=100µA 4.0 V IC=10mA, IB=1.0mA 0.20 V IC=50mA, IB=5.0mA 0.60 V IC=10mA, IB=1.0mA, TA=65oC 0.25 V IC=10mA, IB=0.5mA 0.75 0.95 V IC=10mA, IB=1.0mA 0.80 1.00 V IC=50mA, IB=5.0mA 1.50 V VCE=0.3V, IC=10mA 30 120
168
SYMBOL TEST CONDITIONS MIN MAX UNITS
h f C C t t t t t t t t
FE
T
ob
ib d r s f on on off off
All dimensions in inches (mm).
VCE=1.0V, IC=50mA 20 VCE=5.0V, IC=10mA, f=100MHz 500 MHz VCB=5.0V, IE=0, f=1.0MHz 3.5 pF VBE=0.5V, IC=0, f=1.0MHz 3.5 pF VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA 10 ns VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA 30 ns VCC=6.0V, IC=50mA, IB1=IB2=5.0mA 20 ns VCC=6.0V, IC=50mA, IB1=IB2=5.0mA 12 ns VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA 25 ns VCC=1.5V, IC=10mA, IB1=0.5mA 60 ns VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA 35 ns VCC=1.5V, IC=10mA, IB1=IB2=0.5mA 75 ns
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
169
R2
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