查询CMPT3640供应商
CMPT3640
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
TM
PNP SILICON TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CEO
EBO
C
D
JA
stg
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT3640 type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for saturated switching applications.
Marking code is C2J.
12 V
12 V
4.0 V
80 mA
350 mW
-65 to +150 oC
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CES
I
CES
I
B
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
V
BE(SAT)
V
BE(SAT)
h
FE
VCE=6.0V 10 nA
VCE=6.0V, TA=65oC 10 µA
VCE=6.0V, VEB=0 10 nA
IC=100µA12 V
IC=10mA 12 V
IE=100µA 4.0 V
IC=10mA, IB=1.0mA 0.20 V
IC=50mA, IB=5.0mA 0.60 V
IC=10mA, IB=1.0mA, TA=65oC 0.25 V
IC=10mA, IB=0.5mA 0.75 0.95 V
IC=10mA, IB=1.0mA 0.80 1.00 V
IC=50mA, IB=5.0mA 1.50 V
VCE=0.3V, IC=10mA 30 120
168
SYMBOL TEST CONDITIONS MIN MAX UNITS
h
f
C
C
t
t
t
t
t
t
t
t
FE
T
ob
ib
d
r
s
f
on
on
off
off
All dimensions in inches (mm).
VCE=1.0V, IC=50mA 20
VCE=5.0V, IC=10mA, f=100MHz 500 MHz
VCB=5.0V, IE=0, f=1.0MHz 3.5 pF
VBE=0.5V, IC=0, f=1.0MHz 3.5 pF
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA 10 ns
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA 30 ns
VCC=6.0V, IC=50mA, IB1=IB2=5.0mA 20 ns
VCC=6.0V, IC=50mA, IB1=IB2=5.0mA 12 ns
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA 25 ns
VCC=1.5V, IC=10mA, IB1=0.5mA 60 ns
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA 35 ns
VCC=1.5V, IC=10mA, IB1=IB2=0.5mA 75 ns
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
169
R2