Central CMPT2369 Service Manual
查询CMPT2369供应商
CMPT2369
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
TM
NPN SILICON TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CES
CEO
EBO
C
D
JA
stg
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT2369 type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for ultra high speed switching
applications.
Marking Code is C1J.
40 V
40 V
15 V
4.5 V
500 mA
350 mW
-65 to +150 oC
357 oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
I
CBO
BV
CBO
BV
CES
BV
CEO
BV
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
h
FE
C
ob
f
T
t
s
t
on
t
off
VCB=20V 0.4 µA
VCB=20V, TA=125oC 30 µA
IC=10µA 40 V
IC=10µA 40 V
IC=10mA 15 V
IE=10µA 4.5 V
IC=10mA, IB=1.0mA 0.25 V
IC=10mA, IB=1.0mA 0.7 0.85 V
VCE=1.0V, IC=10mA 40 120
VCE=2.0V, IC=100mA 20
VCB=5.0V, IE=0, f=1.0MHz 4.0 pF
VCE=10V, IC=10mA, f=100MHz 500 MHz
VCC=3.0V, IC=IB1=IB2=10mA 13 ns
VCC=3.0V, IC=10mA, IB1=3.0mA 12 ns
VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 18 ns
160
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R2
161
Loading...