Central CMPSH05-4C Service Manual
MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage V
RRM
40 V
Continuous Forward Current I
F
500 mA
Peak Repetitive Forward Current, tp ≤ 1ms I
FRM
3.5 A
Forward Surge Current, tp=8ms I
FSM
10 A
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ, T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
R
VR= 10V 20 µA
I
R
VR= 30V 100 µA
BV
R
IR= 500µA40V
V
F
IF= 100µA 0.13 V
V
F
IF= 1.0mA 0.21 V
V
F
IF= 10mA 0.27 V
V
F
IF= 100mA 0.35 V
V
F
IF= 500mA 0.47 V
C
T
VR= 1.0V, f=1.0 MHz 50 pF
CMPSH05-4C
SURFACE MOUNT
DUAL, COMMON CATHODE
HIGH CURRENT, LOW V
F
SILICON SCHOTTKY DIODE
SOT-23F CASE
Central
Semiconductor Corp.
TM
R0 (14-September 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPSH05-4C is a Dual, Common Cathode
HIGH CURRENT, LOW VF40 volt Schottky Diode
pair packaged in a space saving SOT-23F surface
mount case. This device has been designed for
small signal general purpose applications when
small size and operational efficiency are prime
requirements.
SPECIFICATIONS:
• Low VF= 0.35V max @ 100mA
• V
RRM
= 40V
• IF= 500mA
MARKING CODE: C405
查询CMPSH05-4C供应商
Central
Semiconductor Corp.
TM
SOT-23F CASE - MECHANICAL OUTLINE
CMPSH05-4C
SURFACE MOUNT
DUAL, COMMON CATHODE
HIGH CURRENT, LOW V
F
SILICON SCHOTTKY DIODE
R0 (14-September 2004)
LEAD CODE:
1) ANODE D2
2) ANODE D1
3) CATHODE D1, D2
MARKING CODE: C405
2
D1 D2
3
1
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