DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPS5061
Series types are epoxy molded PNPN Silicon
Controlled Rectifiers manufactured in an SOT-23
case, designed for control systems and sensing
circuit applications.
Marking codes are P2A, P2B, P2C, and P2D
respectively.
CMPS5061
CMPS5062
CMPS5063
CMPS5064
SURFACE MOUNT
SILICON CONTROLLED RECTIFIER
SOT-23 CASE
Central
Semiconductor Corp.
TM
R6 ( 12-June 2001)
MAXIMUM RATINGS (TA=25°C)
SYMBOL
CMPS5061 CMPS5062
CMPS5063 CMPS5064 UNITS
Peak Repetitive Off-State Voltage V
DRM
100 200 300 400 V
Peak Repetitive Reverse Voltage V
RRM
100 200 300 400 V
RMS On-State Current I
T(RMS)
0.8 A
Average On-State Current (TC=67°C) I
T(AV)
0.51 A
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL
CHARACTERISTICS (TA=25°C unless otherwise noted)
CMPS5061
CMPS5062 CMPS5063 CMPS5064
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAN UNITS
I
DRM
VD=Rated V
DRM
, RGK=1KΩ 1.0 1.0 1.0 1.0 µA
I
RRM
VD=Rated V
DRM
, RGK=1KΩ 1.0 1.0 1.0 1.0 µA
I
DRM
VD=Rated V
DRM
, RGK=1KΩ, TC=125°C 50 50 50 50 µA
I
RRM
VD=Rated V
DRM
, RGK=1KΩ, TC=125°C 50 50 50 50 µA
V
T
IT=1.2A 1.7 1.7 1.7 1.7 V
I
GT
VD=7.0V, RL=100Ω, RGK=1KΩ 200 200 200 200 µA
V
GT
VD=7.0V, RL=100Ω, RGK=1KΩ 0.8 0.8 0.8 0.8 V
V
GD
VD= Rated V
DRM
, RL=100Ω, TC=125°C 0.1 0.1 0.1 0.1 V
I
H
VD=7.0, RGK=1KΩ 5.0 5.0 5.0 5.0 mA
t
ON
VD= Rated V
DRM
, IGT=1.0mA, RGK=1.0Ω,
di/dt=6.0A/µs 2.8 TYP 2.8 TYP 2.8 TYP 2.8 TYP µs