PRELIMINARY
PRELIMINARY
CMPD7006
CMPD7006A
CMPD7006C
CMPD7006S
SURFACE MOUNT
VERY HIGH VOLTAGE
SILICON SWITCHING DIODE
SOT-23 CASE
Central
Semiconductor Corp.
TM
R0 (8-December 2003)
DESCRIPTION:
The Central Semiconductor CMPD7006,
CMPD7006A, CMPD7006C and CMPD7006S
are silicon switching diodes with various diode
configurations, manufactured by the epitaxial
planar process and packaged in an epoxy
molded SOT-23 surface mount case. These
devices are designed for applications requiring
high voltage switching diodes.
The following configurations are available:
CMPD7006 SINGLE MARKING CODE: C7006
CMPD7006A DUAL, COMMON ANODE MARKING CODE: C706A
CMPD7006C DUAL, COMMON CATHODE MARKING CODE: C706C
CMPD7006S DUAL, IN SERIES MARKING CODE: C706S
MAXIMUM RATINGS PER DIODE: (TA=25°C)
SYMBOL UNITS
Continuous Reverse Voltage V
R
600 V
Peak Repetitive Reverse Voltage V
RRM
600 V
Continous Forward Current I
F
100 mA
Peak Repetitive Forward Current I
FRM
300 mA
Forward Surge Current, tp=1.0 µs I
FSM
4.0 A
Forward Surge Current, tp=1.0 s I
FSM
1.0 A
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ, T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
R
VR=480V 7.0 100 nA
I
R
VR=480V, TA=150°C 100 µA
BV
R
IR=1.0µA 600 675 V
V
F
IF=10mA 0.88 1.0 V
V
F
IF=50mA 1.04 1.2 V
V
F
IF=100mA 1.16 1.4 V
C
T
VR=0V, f=1.0 MHz 5.0 pF
t
rr
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA 500 ns